scholarly journals Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 432
Author(s):  
Ya-Chun Chang ◽  
Yu-Li Ho ◽  
Tz-Yan Huang ◽  
Ding-Wei Huang ◽  
Chao-Hsin Wu
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Mixed Gas ◽  
Plasma Damage ◽  
Etching Technique ◽  
Etching Depth ◽  
Gas Plasma ◽  
Depth Control ◽  
Power Application

Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2/BCl3/SF6-mixed gas plasma. This etching technique features accurate etching depth control and low surface plasma damage. Several devices with different gate widths and number of fingers were fabricated to investigate the effect on output current density. We then realized a high current enhancement-mode p-GaN HEMT device with a total gate width of 60 mm that exhibits a threshold voltage of 2.2 V and high drain current of 6.7 A.

Analytical Study of ZnO-based HEMT for Power Switching

2021 ◽  
Author(s):  
Pawan Kumar ◽  
Sumit Chaudhary ◽  
Md Arif Khan ◽  
Sanjay Kumar ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Drain Current ◽  
Cost Effective ◽  
High Electron Mobility Transistor ◽  
Switching Frequency ◽  
Physical Parameters ◽  
High Electron ◽  
Ion Beam Sputtering ◽  
Power Switching ◽  
Group Iii

Abstract We investigate the power switching mechanism to evaluate the power loss ( P D ) and efficiency ( η ) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT), and physical parameters responsible for P D in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEMT and compare the performance with the group III-nitride HEMTs. This work extensively probes all physical parameters such as two-dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HEMT. Results suggest that the MBE and DIBS grown MZO HEMT with the gate width ( W G ) of ∼ 205 and ∼ 280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96 and 99.95% of η and 9.03 and 12.53 W of P D , respectively. Moreover, W G value for DIBS-grown MZO HEMT is observed to further reduce in the range of 112-168 mm by using a Y 2 O 3 spacer layer leading to the maximum η in the range of 99.98-99.97% and the minimum P D in the range of 5-7 W. This work is significant for the development of cost-effective HEMTs for power switching applications.

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

2013 ◽  
Vol 114 (20) ◽  
pp. 204503 ◽  
Author(s):  
J. Y. Fang ◽  
G. Y. Lee ◽  
J. I. Chyi ◽  
C. P. Hsu ◽  
Y. W. Kang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Noise ◽  
High Electron ◽  
Polar Liquids ◽  
High Electron Mobility

Enhancement-Mode GaN MOS-HEMT with Quaternary InAlGaN-Barrier

2017 ◽  
Vol 870 ◽  
pp. 389-394
Author(s):  
P.G. Chen ◽  
H.H. Chen ◽  
M. Tang ◽  
Min Hung Lee
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Reciprocal Space Mapping ◽  
Short Channel ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Enhancement Mode ◽  
Atomic Force ◽  
Gan Buffer Layer

The quaternary InAlGaN-barrier GaN MOS-HEMT (high-electron-mobility transistor) with enhancement mode operation was displayed as Vth=0.65V and the maximum drain current ~ 40 mA/mm at VDS=10V with LG=15μm and LGD=20μm. The measured rocking-curve and RSM (reciprocal space mapping) for epitaxial quality was confirmed the composition of the quaternary and analyzed the relaxation between InAlGaN-barrier and GaN Buffer layer. The surface roughness of InAlGaN was observed by AFM (Atomic force microscopy). The positive polarity of Vth was obtained with the gate lengths 3-30μm, and short channel effect was discussed.

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures

2021 ◽  
Vol 13 (2) ◽  
pp. 289-293
Author(s):  
Jung-Hui Tsai ◽  
Jing-Shiuan Niu ◽  
Xin-Yi Huang ◽  
Wen-Chau Liu
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Comparative Investigation ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Radio Frequency Sputtering ◽  
Transistor Mos

In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

2021 ◽  
Author(s):  
Sneha Ghosh ◽  
Anindita Mondal ◽  
Mousiki Kar ◽  
Atanu Kundu
Keyword(s):  
Dielectric Material ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Oxide Semiconductor ◽  
Superior Performance ◽  
Length Variation ◽  
High Electron ◽  
Power Performance ◽  
Output Resistance ◽  
Transistor Mos

Abstract Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective capacitance by using different oxide materials on source and drain sides, and determination of optimum length of oxides for the superior device performance has been presented in this work. This paper shows a detailed performance analysis of the Analog Figure of Merits (FoMs) like variation of Drain Current (IDS), Transconductance (gm), Output Resistance (R0), Intrinsic Gain (gmR0), RF FoMs like cut-off frequency (fT), maximum frequency of oscillation (fMAX), gate to source resistance (RGS), gate to drain resistance (RGD), gate to drain capacitance(CGD), gate to source capacitance (CGS) and total gate capacitance (CGG) using Non-Quasi-Static (NQS) approach. Power analysis includes Output power (Pout), Gain in dBm and power output efficiency (POE) have been studied. Studies reveal that the device with higher dielectric material towards source side shows superior performance. On subsequently changing the proportion of two oxides in a layer by varying length, it is observed that as the proportion of oxide increases the device demonstrates more desirable Analog and RF characteristics while best power performance is obtained from device with equal lengths of HfO2 and SiO2.

scholarly journals Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT

2013 ◽  
Vol 4 ◽  
pp. 14-17 ◽  
Author(s):  
Niraj Man Shrestha ◽  
Yuen Yee Wang ◽  
Yiming Li ◽  
E. Y. Chang
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Conduction Band Offset ◽  
Gan Hemt ◽  
Maximum Value ◽  
Spacer Layer Thickness ◽  
Spacer Layer

High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carrier properties of HEMT also depend on thickness of spacer layer. Our simulation showed that the mobility of 2DEG attains its maximum value at the 0.5 nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain current increases with increasing spacer layer thickness and reach maximum value at 1.2nm thick spacer layer.The Himalayan Physics Vol. 4, No. 4, 2013 Page: 14-17 Uploaded date: 12/22/2013 

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