scholarly journals Automated Filling of Dry Micron-Sized Particles into Micro Mold Pattern within Planar Substrates for the Fabrication of Powder-Based 3D Microstructures

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1176
Author(s):  
Cris Kostmann ◽  
Thomas Lisec ◽  
Mani Teja Bodduluri ◽  
Olaf Andersen
Keyword(s):  
Magnetic Properties ◽  
Low Frequency ◽  
Atomic Layer ◽  
Raw Material ◽  
The Novel ◽  
Si Substrates ◽  
Low Frequency Oscillations ◽  
Layer Deposition ◽  
Automated Technique ◽  
Planar Substrates

Powder-based techniques are gaining increasing interest for the fabrication of microstructures on planar substrates. A typical approach comprises the filling of a mold pattern with micron-sized particles of the desired material, and their fixation there. Commonly powder-loaded pastes or inks are filled into the molds. To meet the smallest dimensions and highest filling factors, the utilization of dry powder as the raw material is more beneficial. However, an appropriate automated technique for filling a micro mold pattern with dry micron-sized particles is missing up to now. This paper presents a corresponding approach based on the superimposition of high- and low-frequency oscillations for particle mobilization. Rubber balls are utilized to achieve dense packing. For verification, micromagnets are created from 5 µm NdFeB powder on 8” Si substrates, using the novel automated mold filling technique, as well as an existing manual one. Subsequent atomic layer deposition is utilized to agglomerate the loose NdFeB particles into rigid microstructures. The magnetic properties and inner structure of the NdFeB micromagnets are investigated. It is shown that the novel automated technique outperforms the manual one in major terms.

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method

2014 ◽  
Vol 616 ◽  
pp. 247-251
Author(s):  
Tim Yang ◽  
Z.Q. Wang ◽  
Makoto Kohda ◽  
Takeshi Seki ◽  
Koki Takanashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition ◽  
Significant Damage ◽  
Arbitrary Thickness ◽  
High Kinetic Energy

We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF magnetron sputtering, AlO atoms with high kinetic energy are ejected from a sputter target resulting in the degradation of Pt/Co films, while the process of deposition of AlO by ALD is governed by a series of chemically reactive condensations allowing for arbitrary deposition thickness of AlO.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Atomic layer deposition of cobalt carbide films and their magnetic properties using propanol as a reducing agent

2016 ◽  
Vol 379 ◽  
pp. 523-529 ◽  
Author(s):  
Mouhamadou Sarr ◽  
Naoufal Bahlawane ◽  
Didier Arl ◽  
Manuel Dossot ◽  
Edward McRae ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Reducing Agent ◽  
Layer Deposition ◽  
Cobalt Carbide

scholarly journals Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

2018 ◽  
Vol 6 (24) ◽  
pp. 6471-6482 ◽  
Author(s):  
Ali Haider ◽  
Petro Deminskyi ◽  
Mehmet Yilmaz ◽  
Kholoud Elmabruk ◽  
Ibrahim Yilmaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Anodized Aluminum ◽  
Temperature Plasma ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Cylinder Arrays ◽  
Layer Deposition

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD).

scholarly journals Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2857
Author(s):  
Steponas Ašmontas ◽  
Maksimas Anbinderis ◽  
Jonas Gradauskas ◽  
Remigijus Juškėnas ◽  
Konstantinas Leinartas ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Tandem Solar Cells ◽  
Si Substrates ◽  
Layer Deposition ◽  
Current Voltage ◽  
Niobium Doped ◽  
Specific Contact ◽  
Carrier Tunneling ◽  
P Type ◽  
Deposited Films

Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

Observations of low-frequency oscillations during relativistic-electron-beam-plasma interactions

1991 ◽  
Vol 46 (2) ◽  
pp. 237-246
Author(s):  
A. S. Paithankar ◽  
G. P. Gupta
Keyword(s):  
Electron Beam ◽  
Relativistic Electron ◽  
Relativistic Electron Beam ◽  
Low Frequency ◽  
Hydrogen Gas ◽  
The Novel ◽  
Low Frequency Oscillations ◽  
Wave Forms ◽  
Beam Parameters ◽  
Pressure Regime

During propagation of a relativistic electron beam in hydrogen gas at sub-torr pressures using a foil-less diode, low-frequency oscillations in the megahertz range are observed in the net current wave forms, and continue even after passage of the beam. The novel feature of the experiment is that both beam generation and propagation take place in the same low-pressure regime, and hence the beam parameters are functions of gas pressures. Analysis of the experimental results shows that the low-frequency oscillations result from the resistive-hose instability.

Exchange Spring Type Magnet Realized in FePt/Fe Multilayers Deposited by Magnetron Sputtering

2005 ◽  
Vol 872 ◽  
Author(s):  
Yousong Gu ◽  
Dayong Zhang ◽  
Xiaoyuan Zhan ◽  
Zhen Ji ◽  
Xiaolan Zhen ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Lattice Constants ◽  
Si Substrates ◽  
Energy Product ◽  
Layer Deposition ◽  
Different Temperatures ◽  
Spring Type ◽  
Type Magnet

AbstractSeries of FePt/Fe multilayers with different layer thicknesses have been deposited on Si substrates by magnetron sputtering and post annealing at different temperatures and durations. The structure, surface morphology, composition, and magnetic properties of the deposited films have been characterized by XRD, SEM, EDX and VSM. It is found that after annealing at temperatures above 500°C, FePt phase undergoes a phase transition from disorder fcc into ordered fct structure, and become a hard magnetic phase. For [FePt/Fe]n multilayer with varying Fe layer thickness, lattice constants and grain sizes change with Fe layer thickness and annealing temperature. The coercivities of [FePt/Fe]n multilayers decrease with Fe layer deposition time, and the energy product (BH)max shows a maximum with Fe layer thickness. Optimization on layer thickness leads a high (BxH)max value of 15.2MGOe for [FePt(8min)/Fe(4min)]8. The effects of quick annealing and Ag underlayer on the structure and magnetic properties were also studied.

Sign in / Sign up

Export Citation Format

Share Document