scholarly journals Complete Genome Sequence and Characterization of a Polyethylene Biodegradation Strain, Streptomyces Albogriseolus LBX-2

2019 ◽  
Vol 7 (10) ◽  
pp. 379 ◽  
Author(s):  
Huanhuan Shao ◽  
Meiju Chen ◽  
Xueting Fei ◽  
Ronglin Zhang ◽  
Yue Zhong ◽  
...  
Keyword(s):  
Complete Genome ◽  
Sole Carbon Source ◽  
Streptomyces Coelicolor ◽  
Tensile Tests ◽  
Protein Database ◽  
Clusters Of Orthologous Groups ◽  
Bacterial Growth Curve ◽  
Underlying Mechanisms ◽  
Scanning Electron

A bacterial strain, Streptomyces albogriseolus LBX-2, was isolated from a soil sample in Chengdu, China. S. albogriseolus LBX-2 is an aerobic and Gram-positive microorganism that is capable of using the polyethylene as the sole carbon source. Results of scanning electron microscopy and tensile tests indicated that S. albogriseolus LBX-2 could cause the damages to polyethylene (PE). Suspension culture of LBX-2 resulted in the weight loss in the PE powder over a 15-day period. The bacterial growth curve assay clearly demonstrated the utilization of n-hexadecane and n-octadecane for the strain LBX-2. Phylogenetic analysis showed that it was grouped in the same clade as S. albogriseolus belonging to Streptomyces. The complete genome of strain LBX-2 consists of a chromosome of 7,210,477 bp and a linear plasmid of 336,677 bp. Compared with other strains of Streptomyces, the genome size of S. albogriseolus LBX-2 was smaller than the average but its guanine and cytosine content (72.47%) was higher than the others. The Non-Redundant Protein Database (NR), Kyoto Encyclopedia of Genes and Genomes (KEGG), SwissProt, Gene Ontology (GO) and Clusters of Orthologous Groups (COG) annotations provided information on the specific functions of encoded proteins. A total of 21 monooxygenase and 22 dioxygenase genes were found in its genome. Synteny comparison with the genome of Streptomyces coelicolor A3(2) revealed a low overall genetic diversity between them. This study provides valuable information to reveal the underlying mechanisms on PE degradation by S. albogriseolus LBX-2.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests

1997 ◽  
Author(s):  
G. Meneghesso ◽  
E. Zanoni ◽  
P. Colombo ◽  
M. Brambilla ◽  
R. Annunziata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electrostatic Discharge ◽  
Stress Test ◽  
Complete Characterization ◽  
Stress Tests ◽  
Test Procedures ◽  
Emission Microscopy ◽  
Fast Rise ◽  
Scanning Electron

Abstract In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 μm CMOS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurement of the tum-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress test with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).

Isolasi Dan Karakterisasi Bentonit Alam Menjadi Nanopartikel Monmorillonit

2018 ◽  
Vol 3 (1) ◽  
pp. 12 ◽  
Author(s):  
Zaimahwati Zaimahwati ◽  
Yuniati Yuniati ◽  
Ramzi Jalal ◽  
Syahman Zhafiri ◽  
Yuli Yetri
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Particle Size ◽  
Surface Morphology ◽  
Average Diameter ◽  
Particle Size Analyzer ◽  
Ft Ir ◽  
Scanning Electron ◽  
Sedimentation Processes

<p>Pada penelitian ini telah dilakukan isolasi dan karakterisasi bentonit alam menjadi nanopartikel montmorillonit. Bentonit alam yang digunakan diambil dari desa Blangdalam, Kecamatan Nisam Kabupaten Aceh Utara.  Proses isolasi meliputi proses pelarutan dengan aquades, ultrasonic dan proses sedimentasi. Untuk mengetahui karakterisasi montmorillonit dilakukan uji FT-IR, X-RD dan uji morfologi permukaan dengan Scanning Electron Microscopy (SEM). Partikel size analyzer untuk menganalisis dan menentukan ukuran nanopartikel dari isolasi bentonit alam. Dari hasil penelitian didapat ukuran nanopartikel montmorillonit hasil isolasi dari bentonit alam diperoleh berdiameter rata-rata 82,15 nm.</p><p><em>In this research we have isolated and characterized natural bentonite into montmorillonite nanoparticles. Natural bentonite used was taken from Blangdalam village, Nisam sub-district, North Aceh district. The isolation process includes dissolving process with aquades, ultrasonic and sedimentation processes.  The characterization of montmorillonite, FT-IR, X-RD and surface morphology test by Scanning Electron Microscopy (SEM). Particle size analyzer to analyze and determine the size of nanoparticles from natural bentonite insulation. From the research results obtained the size of montmorillonite nanoparticles isolated from natural bentonite obtained an average diameter of 82.15 nm.</em></p>

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