scholarly journals Two-Dimensional Perovskite Crystals Formed by Atomic Layer Deposition of CaTiO3 on γ-Al2O3

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2207
Author(s):  
Tianyu Cao ◽  
Ohhun Kwon ◽  
Chao Lin ◽  
John M. Vohs ◽  
Raymond J. Gorte
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Average Thickness ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Entire Surface ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition ◽  
20 Nm

CaTiO3 films with an average thickness of 0.5 nm were deposited onto γ-Al2O3 by Atomic Layer Deposition (ALD) and then characterized by a range of techniques, including X-ray Diffraction (XRD) and High-Resolution, Transmission Electron Microscopy (HRTEM). The results demonstrate that the films form two-dimensional crystallites over the entire surface. Lattice fringes from HRTEM indicate that the crystallites range in size from 5 to 20 nm and are oriented in various directions. Films of the same thickness on SiO2 remained amorphous, indicating that the support played a role in forming the crystallites.

scholarly journals “Intelligent” Pt Catalysts Based on Thin LaCoO3 Films Prepared by Atomic Layer Deposition

Inorganics ◽  
2019 ◽  
Vol 7 (9) ◽  
pp. 113 ◽  
Author(s):  
Xinyu Mao ◽  
Alexandre C. Foucher ◽  
Eric A. Stach ◽  
Raymond J. Gorte
Keyword(s):  
Atomic Layer Deposition ◽  
Co Adsorption ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Highly Active ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Scanning Transmission ◽  
Water Gas

LaCoO3 films were deposited onto MgAl2O4 powders by atomic layer deposition (ALD) and then used as catalyst supports for Pt. X-ray diffraction (XRD) showed that the 0.5 nm films exhibited a perovskite structure after redox cycling at 1073 K, and scanning transmission electron microscopy and elemental mapping via energy-dispersive X-ray spectroscopy (STEM/EDS) data demonstrated that the films covered the substrate uniformly. Catalysts prepared with 3 wt % Pt showed that the Pt remained well dispersed on the perovskite film, even after repeated oxidations and reductions at 1073 K. Despite the high Pt dispersion, CO adsorption at room temperature was negligible. Compared with conventional Pt on MgAl2O4, the reduced forms of the LaCoO3-containing catalyst were highly active for the CO oxidation and water gas shift (WGS) reactions, while the oxidized catalysts showed much lower activities. Surprisingly, the reduced catalysts were much less active than the oxidized catalysts for toluene hydrogen. Catalysts prepared from thin films of Co3O4 or La2O3 exhibited properties more similar to Pt/MgAl2O4. Possible reasons for how LaCoO3 affects properties are discussed.

scholarly journals Decoration of Vertically Aligned Carbon Nanotubes with Semiconductor Nanoparticles Using Atomic Layer Deposition

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1095 ◽  
Author(s):  
Anna Szabó ◽  
László Péter Bakos ◽  
Dániel Karajz ◽  
Tamás Gyulavári ◽  
Zsejke-Réka Tóth ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Vertically Aligned Carbon Nanotubes ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

Vertically aligned carbon nanotubes (VACNTs or “CNT forest”) were decorated with semiconductor particles (TiO2 and ZnO) by atomic layer deposition (ALD). Both the structure and morphology of the components were systematically studied using scanning (SEM) and high resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and X-ray diffraction (XRD) methods. Characterization results revealed that the decoration was successful in the whole bulk of VACNTs. The effect of a follow-up heat treatment was also investigated and its effect on the structure was proved. It was attested that atomic layer deposition is a suitable technique for the fabrication of semiconductor/vertically aligned carbon nanotubes composites. Regarding their technological importance, we hope that semiconductor/CNT forest nanocomposites find potential application in the near future.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Ex-situ X-ray diffraction analysis of electrode strain at TiO2 atomic layer deposition/α-MoO3 interface in a novel aqueous potassium ion battery

2016 ◽  
Vol 316 ◽  
pp. 160-169 ◽  
Author(s):  
Nicholas David Schuppert ◽  
Santanu Mukherjee ◽  
Alex M. Bates ◽  
Eun-Jin Son ◽  
Moon Jong Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffraction Analysis ◽  
Atomic Layer ◽  
Potassium Ion ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

2007 ◽  
Vol 990 ◽  
Author(s):  
Sung-Hoon Chung ◽  
Vladislav Vasilyev ◽  
Evgeni Gorokhov ◽  
Yong-Won Song ◽  
Hyuk-Kyoo Jang
Keyword(s):  
Liquid Phase ◽  
Atomic Layer Deposition ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Structural And Electrical Properties

ABSTRACTWe investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ming-Hua Lo ◽  
Zhen-Yu Li ◽  
Shih-Wei Chen ◽  
Jhih-Cang Hong ◽  
Ting-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Force Microscope Image ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTIn this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal(diethylamino) precursors

2007 ◽  
Vol 22 (12) ◽  
pp. 3455-3464 ◽  
Author(s):  
Rajesh Katamreddy ◽  
Ronald Inman ◽  
Gregory Jursich ◽  
Axel Soulet ◽  
Christos Takoudis
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Thermal Characteristics ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Metal Precursors ◽  
Layer Deposition ◽  
Xrd Techniques

Tetrakis-diethylamino hafnium (TDEAH), tris-diethylamino aluminum (TDEAA), and ozone were used for the atomic layer deposition (ALD) of HfO2, Al2O3, and HfAlOx films. The ALD rates were measured to be 1.1 Å/cycle for HfO2 and 1.3 Å/cycle for Al2O3. The ALD temperature windows were found to be between 200 and 325 °C for TDEAA, and between 200 and 275 °C for TDEAH. The overlap of these ALD windows between 200 and 275 °C is critical for ALD of the composite film, HfAlOx. In addition to the overlapping ALD temperature windows, the two metal precursors have similar thermal characteristics, as shown by TGA and differential scanning calorimetry. As-deposited films and films postannealed at 600 and 800 °C films were analyzed using Fourier transformed infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction (XRD) techniques. FTIR spectra revealed interfacial oxide growth during deposition of both HfO2 and Al2O3 whose thickness increased with annealing temperature. The FTIR data also indicated hydroxyl and nitrate groups in the films; these species were removed after annealing in Ar at a temperature of ⩾600 °C. Both FTIR and XRD results indicated the crystallization of pure HfO2 after annealing at temperatures as low as 600 °C. On the other hand, pure Al2O3 remained amorphous after annealing at temperatures up to 800 °C. XRD data of the composite HfAlOx film show that films deposited by alternating five cycles of HfO2 and one cycle of Al2O3 remained amorphous after annealing at 600 °C. Rutherford backscattering analysis of HfAlOx deposited with a varied number of alternating HfO2 and Al2O3 cycles demonstrated a strong correlation between the cyclic dosage of TDEAA and TDEAH and the film composition.

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