scholarly journals Optical Efficiency Enhancement of Nanojet-Based Dielectric Double-Material Color Splitters for Image Sensor Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3036
Author(s):  
Oksana Shramkova ◽  
Valter Drazic ◽  
Bobin Varghese ◽  
Laurent Blondé ◽  
Valerie Allié

We propose a new type of color splitter, which guides a selected bandwidth of incident light towards the proper photosensitive area of the image sensor by exploiting the nanojet (NJ) beam phenomenon. Such splitting can be performed as an alternative to filtering out part of the received light on each color subpixel. We propose to split the incoming light thanks to a new type of NJ-based near-field focusing double-material element with an insert. To suppress crosstalk, we use a Deep-Trench Isolation (DTI) structure. We demonstrate that the use of a dielectric insert block allows for reduction in the size of the color splitting element. By changing the position of the DTI, the functionality of separating blue, green and red light can be improved.

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3062
Author(s):  
Chang-Fu Han ◽  
Jiun-Ming Chiou ◽  
Jen-Fin Lin

The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OEmax.) of optical efficiency (OE) and its wavelength region are identified first. Then, the growth ratio (GR) is defined for the OE change in these wavelength ranges to highlight the effectiveness of various DTI and d combinations on the OEs and evaluate the OE difference between the pixel arrays with and without the DTI + IPA structures. Increasing DTI can bring in monotonous OEmax. increases in the entire wavelength region. For a fixed DTI, the maximum OEmax. is formed as the flat plane (d = 0 nm) is chosen for the top surface of Si photodiode in the RGB pixels operating at the visible light wavelengths; whereas different nonzero value is needed to obtain the maximum OEmax. for the RGB pixels operating in the near-infrared (NIR) region. The optimum choice in d for each color pixel and DTI depth can elevate the maximum GR value in the NIR region up to 82.2%.


Sensors ◽  
2020 ◽  
Vol 20 (3) ◽  
pp. 727
Author(s):  
Francois Roy ◽  
Andrej Suler ◽  
Thomas Dalleau ◽  
Romain Duru ◽  
Daniel Benoit ◽  
...  

Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge storage, and charge transfer to the sensing node. To prove this concept, a backside illumination (BSI), p-type, 2-µm-pitch pixel was designed. It integrates a vertical pinned photo gate (PPG), a buried vertical transfer gate (TG), sidewall capacitive deep trench isolation (CDTI), and backside oxide–nitride–oxide (ONO) stack. The designed pixel was fabricated with variations of key parameters for optimization. Testing results showed the following achievements: 13,000 h+ full-well capacity with no lag for charge transfer, 80% quantum efficiency (QE) at 550-nm wavelength, 5 h+/s dark current at 60 °C, 2 h+ temporal noise floor, and 75 dB dynamic range. In comparison with conventional pixel design, the proposed concept could improve CIS performance.


Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 123
Author(s):  
Zhong Lijing ◽  
Roman A. Zakoldaev ◽  
Maksim M. Sergeev ◽  
Andrey B. Petrov ◽  
Vadim P. Veiko ◽  
...  

Laser direct writing technique in glass is a powerful tool for various waveguides’ fabrication that highly develop the element base for designing photonic devices. We apply this technique to fabricate waveguides in porous glass (PG). Nanoporous optical materials for the inscription can elevate the sensing ability of such waveguides to higher standards. The waveguides were fabricated by a single-scan approach with femtosecond laser pulses in the densification mode, which resulted in the formation of a core and cladding. Experimental studies revealed three types of waveguides and quantified the refractive index contrast (up to Δn = 1.2·10−2) accompanied with ~1.2 dB/cm insertion losses. The waveguides demonstrated the sensitivity to small objects captured by the nanoporous framework. We noticed that the deposited ethanol molecules (3 µL) on the PG surface influence the waveguide optical properties indicating the penetration of the molecule to its cladding. Continuous monitoring of the output near field intensity distribution allowed us to determine the response time (6 s) of the waveguide buried at 400 µm below the glass surface. We found that the minimum distinguishable change of the refractive index contrast is 2 × 10−4. The results obtained pave the way to consider the waveguides inscribed into PG as primary transducers for sensor applications.


2014 ◽  
Vol 602-605 ◽  
pp. 3359-3362
Author(s):  
Chun Li Zhu ◽  
Jing Li

In this paper, output near fields of nanowires with different optical and structure configurations are calculated by using the three-dimensional finite-difference time-domain (3D FDTD) method. Then a nanowire with suitable near field distribution is chosen as the probe for scanning dielectric and metal nanogratings. Scanning results show that the resolution in near-field imaging of dielectric nanogratings can be as low as 80nm, and the imaging results are greatly influenced by the polarization direction of the incident light. Compared with dielectric nanogratings, metal nanogratings have significantly enhanced resolutions when the arrangement of gratings is perpendicular to the polarization direction of the incident light due to the enhancement effect of the localized surface plasmons (SPs). Results presented here could offer valuable references for practical applications in near-field imaging with nanowires as optical probes.


2011 ◽  
Vol 60 (8) ◽  
pp. 2759-2767 ◽  
Author(s):  
Mukul Sarkar ◽  
David San Segundo Bello ◽  
Chris Van Hoof ◽  
Albert J. P. Theuwissen

2021 ◽  
Vol 12 ◽  
Author(s):  
Gábor Bernát ◽  
Tomáš Zavřel ◽  
Eva Kotabová ◽  
László Kovács ◽  
Gábor Steinbach ◽  
...  

Photomorphogenesis is a process by which photosynthetic organisms perceive external light parameters, including light quality (color), and adjust cellular metabolism, growth rates and other parameters, in order to survive in a changing light environment. In this study we comprehensively explored the light color acclimation of Cyanobium gracile, a common cyanobacterium in turbid freshwater shallow lakes, using nine different monochromatic growth lights covering the whole visible spectrum from 435 to 687 nm. According to incident light wavelength, C. gracile cells performed great plasticity in terms of pigment composition, antenna size, and photosystem stoichiometry, to optimize their photosynthetic performance and to redox poise their intersystem electron transport chain. In spite of such compensatory strategies, C. gracile, like other cyanobacteria, uses blue and near far-red light less efficiently than orange or red light, which involves moderate growth rates, reduced cell volumes and lower electron transport rates. Unfavorable light conditions, where neither chlorophyll nor phycobilisomes absorb light sufficiently, are compensated by an enhanced antenna size. Increasing the wavelength of the growth light is accompanied by increasing photosystem II to photosystem I ratios, which involve better light utilization in the red spectral region. This is surprisingly accompanied by a partial excitonic antenna decoupling, which was the highest in the cells grown under 687 nm light. So far, a similar phenomenon is known to be induced only by strong light; here we demonstrate that under certain physiological conditions such decoupling is also possible to be induced by weak light. This suggests that suboptimal photosynthetic performance of the near far-red light grown C. gracile cells is due to a solid redox- and/or signal-imbalance, which leads to the activation of this short-term light acclimation process. Using a variety of photo-biophysical methods, we also demonstrate that under blue wavelengths, excessive light is quenched through orange carotenoid protein mediated non-photochemical quenching, whereas under orange/red wavelengths state transitions are involved in photoprotection.


2012 ◽  
Vol 717-720 ◽  
pp. 87-92
Author(s):  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
Isamu Akasaki ◽  
...  

The LED technology started to developed many years ago with red light emitting diodes. To achieve the blue LED, novel growth technologies and process steps were explored, and made it possible to demonstrate efficient blue LED performance from nitrides. The efficiency was further developed and blue LEDs were commercially introduced in the 1990’s. The white LED became possible by the use of the blue LED and a phosphor that converts a part of the blue light to other colors in the visible range to combine into white light. However, even today there are limitations in the phosphor-based white LED technology, in particular for general lighting, and new solutions should be explored to speed the pace when white LEDs will be able to make substantial energy savings. In this paper we overview gallium nitride materials evolution and growth concepts for LEDs. We describe the fluorescent silicon carbide material prepared by a novel growth technology for a new type of white LED in general lighting with pure white light. This paper introduces an interesting research in fundamental growth and optical properties of light emitting silicon carbide.


2014 ◽  
Vol 605 ◽  
pp. 453-456
Author(s):  
Nayera Ahmed ◽  
Guo Neng Lu ◽  
François Roy

We have investigated Total Ionizing Dose (TID) effects on a 1.4μm-pitch, Deep-Trench Isolation (DTI) CMOS image sensor for its use in radiation environment. Our investigation includes characterization and TCAD simulations (with parametric modeling) of the image sensor before and after irradiation with 60Co gamma rays source for TID from 3 to 100 Krad. We have obtained agreements between measured results and simulated ones on degradations of the characteristics Quantum Efficiency (QE) and dark current (Idark). The agreements validate our modeling and simulation approach to evaluating these characteristics. It has been shown that TID causes evolution of interface states of different parts of the pixel, which are responsible for QE and Idark degradations. TID effects on different parts of the pixel can be identified and quantified.


Sign in / Sign up

Export Citation Format

Share Document