scholarly journals Local Inflammatory Response after Intramuscularly Implantation of Anti-Adhesive Plasma-Fluorocarbon-Polymer Coated Ti6AI4V Discs in Rats

Polymers ◽  
2021 ◽  
Vol 13 (16) ◽  
pp. 2684
Author(s):  
Charlotte Koppe ◽  
Andreas Hoene ◽  
Uwe Walschus ◽  
Birgit Finke ◽  
Holger Testrich ◽  
...  
Keyword(s):  
T Lymphocytes ◽  
Inflammatory Response ◽  
Discharge Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Discharge ◽  
Local Inflammatory Response ◽  
Regulatory T Lymphocytes ◽  
Fluorocarbon Polymer ◽  
Tissue Reactions

Orthopaedic implants and temporary osteosynthesis devices are commonly based on Titanium (Ti). For short-term devices, cell-material contact should be restricted for easy removal after bone healing. This could be achieved with anti-adhesive plasma-fluorocarbon-polymer (PFP) films created by low-temperature plasma processes. Two different PFP thin film deposition techniques, microwave (MW) and radiofrequency (RF) discharge plasma, were applied to receive smooth, hydrophobic surfaces with octafluoropropane (C3F8) or hexafluorohexane (C6F6) as precursors. This study aimed at examining the immunological local tissue reactions after simultaneous intramuscular implantation of four different Ti samples, designated as MW-C3F8, MW-C6F6, RF-C3F8 and Ti-controls, in rats. A differentiated morphometric evaluation of the inflammatory reaction was conducted by immunohistochemical staining of CD68+ macrophages, CD163+ macrophages, MHC class II-positive cells, T lymphocytes, CD25+ regulatory T lymphocytes, NK cells and nestin-positive cells in cryosections of surrounding peri-implant tissue. Tissue samples were obtained on days 7, 14 and 56 for investigating the acute and chronical inflammation (n = 8 rats/group). Implants with a radiofrequency discharge plasma (RF-C3F8) coating exhibited a favorable short- and long-term immune/inflammatory response comparable to Ti-controls. This was also demonstrated by the significant decrease in pro-inflammatory CD68+ macrophages, possibly downregulated by significantly increasing regulatory T lymphocytes.

Anti-Adhesive Finishing of Temporary Implant Surfaces by a Plasma-Fluorocarbon-Polymer

2014 ◽  
Vol 783-786 ◽  
pp. 1238-1243 ◽  
Author(s):  
Birgit Finke ◽  
Holger Testrich ◽  
Henrike Rebl ◽  
Barbara Nebe ◽  
Rainer Bader ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Trauma Surgery ◽  
Titanium Implant ◽  
Tissue Response ◽  
Rf Discharge ◽  
Water Contact ◽  
Capacitively Coupled ◽  
Fluorocarbon Polymer ◽  
Tissue Reactions

Titanium implant surfaces should ideally be designed to support the subsequent clinical application. Therefore temporarily used implants have to fulfill both the mechanical stabilization of the bone stock and furthermore in trauma surgery the disintegration into the bone because the implant should be removed after fracture healing. The anti-adhesive plasma-fluorocarbon-polymer (PFP) films were synthesized using two different low-pressure plasma sources, the 2.45 GHz microwave (mw) and the 13.56 MHz capacitively coupled radio-frequency (rf) discharge in a mixture of the precursor octafluoropropane (C3F8) and hydrogen (H2). The film properties were characterized using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, water contact angle measurements, and abrasive strength tests. Cell adhesion and spreading of human osteoblasts were clearly reduced on these PFP surfaces. First in vivo data on the biocompatibility of the PFP films deposited in the rf-discharge demonstrate that the local inflammatory tissue response for PFP coating was comparable to controls, while a PFP coating deposited in mw plasma induced stronger tissue reactions.

A Mass Spectrometric System for the Study of Transient Plasma Species in Thin Film Deposition

1983 ◽  
Vol 30 ◽  
Author(s):  
N.P. Johnson ◽  
A.P. Webb ◽  
D.J. Fabian
Keyword(s):  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Mass Spectrometric ◽  
Film Deposition ◽  
Rf Discharge ◽  
Rf Plasma ◽  
Gaseous Species ◽  
Reactive Plasma ◽  
Torr Pressure ◽  
Transient Plasma

ABSTRACTA system is described for mass spectrometric detection of transient gaseous species involved in reactive plasma deposition of materials. The equipment comprises a three stage differentially pumped UHV quadrupole mass spectrometer chamber, which permits modulated molecular beam sampling over a short path-length, direct from the plasma at 0.1–1.0 torr pressure. Operation of the system and optimum conditions for maximum signal-detection are detailed, and preliminary results for species formed in a silane-argon high-power rf discharge are reported. Spectra mostly agree with those obtained by Turban and Catherine using a lower power rf plasma, although some evidence is observed for the formation of increased SiH species at higher power.

Nitride-molecule synthesis in plasma produced by reactive laser ablation assisted by RF discharge for thin-film deposition

1998 ◽  
Vol 127-129 ◽  
pp. 668-673 ◽  
Author(s):  
C Vivien ◽  
M Dinescu ◽  
P Meheust ◽  
C Boulmer-Leborgne ◽  
A.P Caricato ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Discharge

scholarly journals Direct Current Magnetron Glow Discharge Plasma Characteristics Study for Controlled Deposition of Titanium Nitride Thin Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
Sankar Moni Borah
Keyword(s):  
Thin Film ◽  
Glow Discharge ◽  
Titanium Nitride ◽  
Direct Current ◽  
Discharge Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Glow Discharge Plasma ◽  
Cylindrical Magnetron ◽  
Plasma Characteristics

This paper reports on the study of direct current (DC) magnetron glow discharge plasma characteristics in a cylindrical magnetron system in argon-nitrogen. Presence of nitrogen gas makes the plasma environment reactive, and it results in significant changes of the plasma properties—number density, electron temperature, floating potential, and sheath thickness. Applied magnetic field is a parameter which is closely related to proper deposition of thin film. Cylindrical Langmuir probe and Emissive probe are used as diagnostics for the estimation of various plasma parameters indicated earlier. Controlled titanium nitride (TiN) thin film deposition on bell-metal at different argon-nitrogen gases ratio is another important study reported.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Layered and ion implantation specimens as possible reference materials for the electron-probe microanalysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1652-1653
Author(s):  
G. Remond ◽  
R.H. Packwood ◽  
C. Gilles ◽  
S. Chryssoulis
Keyword(s):  
Ion Implantation ◽  
Reference Materials ◽  
Analytical Techniques ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Spatially Resolved ◽  
Analytical Expressions ◽  
Original Approach ◽  
Depth Concentration

Merits and limitations of layered and ion implanted specimens as possible reference materials to calibrate spatially resolved analytical techniques are discussed and illustrated for the case of gold analysis in minerals by means of x-ray spectrometry with the EPMA. To overcome the random heterogeneities of minerals, thin film deposition and ion implantation may offer an original approach to the manufacture of controlled concentration/ distribution reference materials for quantification of trace elements with the same matrix as the unknown.In order to evaluate the accuracy of data obtained by EPMA we have compared measured and calculated x-ray intensities for homogeneous and heterogeneous specimens. Au Lα and Au Mα x-ray intensities were recorded at various electron beam energies, and hence at various sampling depths, for gold coated and gold implanted specimens. X-ray intensity calculations are based on the use of analytical expressions for both the depth ionization Φ (ρz) and the depth concentration C (ρz) distributions respectively.

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