scholarly journals Design and Fabrication of MOS Type Gas Sensor with Vertically Integrated Heater Using CMOS-MEMS Technology

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 772 ◽  
Author(s):  
Ya-Chu Lee ◽  
Ping-Lin Yang ◽  
Chun-I Chang ◽  
Weileun Fang
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Low Cost ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Resistance Change ◽  
Mems Technology ◽  
Cmos Mems

This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 μm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor. This design has three merits: (1) low-cost post-CMOS process using metal/oxide wet etching, (2) composite sensing material based on ZnO-SnO2 coating on the CMOS-MEMS structure, (3) vertical integration of heater and ZnO-SnO2 gas-sensing films using CMOS-MEMS and drop casting technologies. Proposed design significantly increase the sensitivity at the high operating temperature. In summary, the sensitivity of presented sensor increased from 0.04%/% (O2/N2) at near room operating temperature to 0.2%/%(O2/N2) at near 140 °C for the range of 5–50% oxygen concentration.

scholarly journals A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Popa ◽  
Richard Hopper ◽  
Syed Zeeshan Ali ◽  
Matthew Thomas Cole ◽  
Ye Fan ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Mir Spectroscopy ◽  
Sensing Applications ◽  
Cmos Mems ◽  
Extended Operation ◽  
On Chip

AbstractThe gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 $$^{\circ }$$ ∘ C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 $$^{\circ }$$ ∘ C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.

scholarly journals A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

2021 ◽  
Author(s):  
Daniel Popa ◽  
Richard Hopper ◽  
Syed Zeeshan Ali ◽  
Matthew Cole ◽  
Ye Fan ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Mir Spectroscopy ◽  
Sensing Applications ◽  
Cmos Mems ◽  
Extended Operation ◽  
On Chip

Abstract The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 • C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 • C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Sensors.

scholarly journals Reducing Food Waste with a Tiny CMOS-MEMS Gas Sensor, Dubbed GMOS

2020 ◽  
Vol 2 (1) ◽  
pp. 36
Author(s):  
Dima Shlenkevitch ◽  
Sara Stolyarova ◽  
Tanya Blank ◽  
Igor Brouk ◽  
Yossi Levi ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Low Cost ◽  
Catalytic Layer ◽  
Sensing Element ◽  
Detection Systems ◽  
Current Voltage ◽  
Mems Technology ◽  
Cmos Mems ◽  
Sensor Temperature ◽  
Different Gases

We present a tiny combustion-type gas sensor (named GMOS) fabricated using standard CMOS-SOI-MEMS technology. It is a low-cost thermal sensor with an embedded heater, catalytic layer and suspended transistor as a sensing element. The sensor principle relies on the combustion reaction of the gas that takes place on the catalytic layer. The exothermic combustion leads to a sensor temperature increase, which modifies the transistor current-voltage characteristics. The GMOS is useful for detecting different gases, such as ethanol, acetone and especially ethylene, as well as their mixtures. The sensor demonstrates an excellent sensitivity to ethylene of 40 mV/ppm and selective ethylene detection using nanoparticle catalytic layers of Pt, as well as TiO2. Along with its low energy consumption, GMOS is a promising technology for low-cost ethylene detection systems at different stages in the food supply chain, and it may help reduce global fruit and vegetable loss and waste.

scholarly journals A Micromachined Metal Oxide Composite Dual Gas Sensor System for Principal Component Analysis-Based Multi-Monitoring of Noxious Gas Mixtures

Micromachines ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 24
Author(s):  
In-Hwan Yang ◽  
Joon-Hyung Jin ◽  
Nam Ki Min
Keyword(s):  
Principal Component Analysis ◽  
Metal Oxide ◽  
Gas Sensor ◽  
Microelectromechanical Systems ◽  
Gas Sensing ◽  
Principal Component ◽  
Component Analysis ◽  
Oxide Semiconductor ◽  
Mixed Gas ◽  
Sensor Devices

Microelectronic gas-sensor devices were developed for the detection of carbon monoxide (CO), nitrogen dioxides (NO2), ammonia (NH3) and formaldehyde (HCHO), and their gas-sensing characteristics in six different binary gas systems were examined using pattern-recognition methods. Four nanosized gas-sensing materials for these target gases, i.e., Pd-SnO2 for CO, In2O3 for NOX, Ru-WO3 for NH3, and SnO2-ZnO for HCHO, were synthesized using a sol-gel method, and sensor devices were fabricated using a microsensor platform. Principal component analysis of the experimental data from the microelectromechanical systems gas-sensor arrays under exposure to single gases and their mixtures indicated that identification of each individual gas in the mixture was successful. Additionally, the gas-sensing behavior toward the mixed gas indicated that the traditional adsorption and desorption mechanism of the n-type metal oxide semiconductor (MOS) governs the sensing mechanism of the mixed gas systems.

scholarly journals Metal Oxide Semiconductor: Future Material for Gas Sensors and it’s Synthesis Techniques

2019 ◽  
Vol 8 (6S3) ◽  
pp. 1615-1619
Keyword(s):  
Metal Oxide ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Low Cost ◽  
High Surface ◽  
High Surface Area ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Semiconductors ◽  
Methods Of Synthesis

This paper provides a complete idea about metal oxide semiconductors ((MOSs) for gas sensing application. Metal oxide semiconductor nano-materials are showing much higher strength in many industries, research laboratories and public health and so on with their effective chemical, physical, and electronic properties. The morphology, band gap, porosity, conductivity properties, low cost and high surface area etc. are few of the properties of MOSs that are responsible for the enhancement of sensing properties in various applications. Besides these, now-a-days MOSs are grown in different nanostructures like nano rods, nano flowers, nano sheets, nanowires etc. using the various growth techniques which are further responsible for their betterment as gas sensors. Therefore, this paper gives a complete idea about the different methods of synthesis of MOSs.

scholarly journals A 0.35-μm CMOS-MEMS Oscillator for High-Resolution Distributed Mass Detection

Micromachines ◽  
2018 ◽  
Vol 9 (10) ◽  
pp. 484 ◽  
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Joan Barceló ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Complementary Metal Oxide Semiconductor ◽  
Turnaround Time ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Mass Detection ◽  
Electrostatically Actuated ◽  
Resonator Structure ◽  
Cmos Mems

This paper presents the design, fabrication, and electrical characterization of an electrostatically actuated and capacitive sensed 2-MHz plate resonator structure that exhibits a predicted mass sensitivity of ~250 pg·cm−2·Hz−1. The resonator is embedded in a fully on-chip Pierce oscillator scheme, thus obtaining a quasi-digital output sensor with a short-term frequency stability of 1.2 Hz (0.63 ppm) in air conditions, corresponding to an equivalent mass noise floor as low as 300 pg·cm−2. The monolithic CMOS-MEMS sensor device is fabricated using a commercial 0.35-μm 2-poly-4-metal complementary metal-oxide-semiconductor (CMOS) process, thus featuring low cost, batch production, fast turnaround time, and an easy platform for prototyping distributed mass sensors with unprecedented mass resolution for this kind of devices.

Metal-oxide based ammonia gas sensors: A review

2020 ◽  
Vol 10 ◽  
Author(s):  
Priya Gupta ◽  
Savita Maurya ◽  
Narendra Kumar Pandey ◽  
Vernica Verma
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Review Paper ◽  
Gas Sensing ◽  
Gas Sensitivity ◽  
Ammonia Gas ◽  
Ammonia Sensing ◽  
Ammonia Gas Sensors

: This review paper encompasses a study of metal-oxide and their composite based gas sensors used for the detection of ammonia (NH3) gas. Metal-oxide has come into view as an encouraging choice in the gas sensor industry. This review paper focuses on the ammonia sensing principle of the metal oxides. It also includes various approaches adopted for increasing the gas sensitivity of metal-oxide sensors. Increasing the sensitivity of the ammonia gas sensor includes size effects and doping by metal or other metal oxides which will change the microstructure and morphology of the metal oxides. Different parameters that affect the performances like sensitivity, stability, and selectivity of gas sensors are discussed in this paper. Performances of the most operated metal oxides with strengths and limitations in ammonia gas sensing application are reviewed. The challenges for the development of high sensitive and selective ammonia gas sensor are also discussed.

scholarly journals Field Study of Metal Oxide Semiconductor Gas Sensors in Temperature Cycled Operation for Selective VOC Monitoring in Indoor Air

Atmosphere ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 647
Author(s):  
Tobias Baur ◽  
Johannes Amann ◽  
Caroline Schultealbert ◽  
Andreas Schütze
Keyword(s):  
Air Quality ◽  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Indoor Air ◽  
Ambient Air ◽  
Quantitative Agreement ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temporal Resolution

More and more metal oxide semiconductor (MOS) gas sensors with digital interfaces are entering the market for indoor air quality (IAQ) monitoring. These sensors are intended to measure volatile organic compounds (VOCs) in indoor air, an important air quality factor. However, their standard operating mode often does not make full use of their true capabilities. More sophisticated operation modes, extensive calibration and advanced data evaluation can significantly improve VOC measurements and, furthermore, achieve selective measurements of single gases or at least types of VOCs. This study provides an overview of the potential and limits of MOS gas sensors for IAQ monitoring using temperature cycled operation (TCO), calibration with randomized exposure and data-based models trained with advanced machine learning. After lab calibration, a commercial digital gas sensor with four different gas-sensitive layers was tested in the field over several weeks. In addition to monitoring normal ambient air, release tests were performed with compounds that were included in the lab calibration, but also with additional VOCs. The tests were accompanied by different analytical systems (GC-MS with Tenax sampling, mobile GC-PID and GC-RCP). The results show quantitative agreement between analytical systems and the MOS gas sensor system. The study shows that MOS sensors are highly suitable for determining the overall VOC concentrations with high temporal resolution and, with some restrictions, also for selective measurements of individual components.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

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