scholarly journals A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Popa ◽  
Richard Hopper ◽  
Syed Zeeshan Ali ◽  
Matthew Thomas Cole ◽  
Ye Fan ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Mir Spectroscopy ◽  
Sensing Applications ◽  
Cmos Mems ◽  
Extended Operation ◽  
On Chip

AbstractThe gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 $$^{\circ }$$ ∘ C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 $$^{\circ }$$ ∘ C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.

scholarly journals A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

2021 ◽  
Author(s):  
Daniel Popa ◽  
Richard Hopper ◽  
Syed Zeeshan Ali ◽  
Matthew Cole ◽  
Ye Fan ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Mir Spectroscopy ◽  
Sensing Applications ◽  
Cmos Mems ◽  
Extended Operation ◽  
On Chip

Abstract The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 • C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 • C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Sensors.

scholarly journals Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS–MEMS Technology

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 108 ◽  
Author(s):  
Hasan Göktaş
Keyword(s):  
Temperature Sensor ◽  
Complementary Metal Oxide Semiconductor ◽  
Dimensional Change ◽  
Oxide Semiconductor ◽  
Photon Detectors ◽  
Infrared Sensing ◽  
Sensing Applications ◽  
Mems Technology ◽  
Cmos Mems ◽  
Reliable Solution

Microbolometers and photon detectors are two main technologies to address the needs in Infrared Sensing applications. While the microbolometers in both complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technology offer many advantages over photon detectors, they still suffer from nonlinearity and relatively low temperature sensitivity. This paper not only offers a reliable solution to solve the nonlinearity problem but also demonstrate a noticeable potential to build ultra-sensitive CMOS–MEMS temperature sensor for infrared (IR) sensing applications. The possibility of a 31× improvement in the total absolute frequency shift with respect to ambient temperature change is verified via both COMSOL (multiphysics solver) and theory. Nonlinearity problem is resolved by an operating temperature sensor around the beam bending point. The effect of both pull-in force and dimensional change is analyzed in depth, and a drastic increase in performance is achieved when the applied pull-in force between adjacent beams is kept as small as possible. The optimum structure is derived with a length of 57 µm and a thickness of 1 µm while avoiding critical temperature and, consequently, device failure. Moreover, a good match between theory and COMSOL is demonstrated, and this can be used as a guidance to build state-of-the-art designs.

scholarly journals Laser soliton microcombs heterogeneously integrated on silicon

Science ◽  
2021 ◽  
Vol 373 (6550) ◽  
pp. 99-103
Author(s):  
Chao Xiang ◽  
Junqiu Liu ◽  
Joel Guo ◽  
Lin Chang ◽  
Rui Ning Wang ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Low Cost ◽  
High Capacity ◽  
Complementary Metal Oxide Semiconductor ◽  
Laser Frequency ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Mobile Platforms ◽  
Frequency Combs ◽  
On Chip

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection and ranging, or photonics-assisted signal processing. We report heterogeneously integrated laser soliton microcombs combining both indium phospide/silicon (InP/Si) semiconductor lasers and ultralow-loss silicon nitride (Si3N4) microresonators on a monolithic silicon substrate. Thousands of devices can be produced from a single wafer by using complementary metal-oxide-semiconductor–compatible techniques. With on-chip electrical control of the laser-microresonator relative optical phase, these devices can output single-soliton microcombs with a 100-gigahertz repetition rate. Furthermore, we observe laser frequency noise reduction due to self-injection locking of the InP/Si laser to the Si3N4 microresonator. Our approach provides a route for large-volume, low-cost manufacturing of narrow-linewidth, chip-based frequency combs for next-generation high-capacity transceivers, data centers, space and mobile platforms.

scholarly journals Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

Sensors ◽  
2021 ◽  
Vol 21 (21) ◽  
pp. 7224
Author(s):  
Sebastián Alberti ◽  
Anurup Datta ◽  
Jana Jágerská
Keyword(s):  
Raman Spectroscopy ◽  
Absorption Spectroscopy ◽  
Gas Sensing ◽  
Light Sources ◽  
Low Loss ◽  
Figures Of Merit ◽  
Sensing Applications ◽  
Sensitivity And Selectivity ◽  
On Chip ◽  
Ir And Raman

On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light–analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.

scholarly journals A 0.35-μm CMOS-MEMS Oscillator for High-Resolution Distributed Mass Detection

Micromachines ◽  
2018 ◽  
Vol 9 (10) ◽  
pp. 484 ◽  
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Joan Barceló ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Complementary Metal Oxide Semiconductor ◽  
Turnaround Time ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Mass Detection ◽  
Electrostatically Actuated ◽  
Resonator Structure ◽  
Cmos Mems

This paper presents the design, fabrication, and electrical characterization of an electrostatically actuated and capacitive sensed 2-MHz plate resonator structure that exhibits a predicted mass sensitivity of ~250 pg·cm−2·Hz−1. The resonator is embedded in a fully on-chip Pierce oscillator scheme, thus obtaining a quasi-digital output sensor with a short-term frequency stability of 1.2 Hz (0.63 ppm) in air conditions, corresponding to an equivalent mass noise floor as low as 300 pg·cm−2. The monolithic CMOS-MEMS sensor device is fabricated using a commercial 0.35-μm 2-poly-4-metal complementary metal-oxide-semiconductor (CMOS) process, thus featuring low cost, batch production, fast turnaround time, and an easy platform for prototyping distributed mass sensors with unprecedented mass resolution for this kind of devices.

scholarly journals Design and Fabrication of MOS Type Gas Sensor with Vertically Integrated Heater Using CMOS-MEMS Technology

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 772 ◽  
Author(s):  
Ya-Chu Lee ◽  
Ping-Lin Yang ◽  
Chun-I Chang ◽  
Weileun Fang
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Low Cost ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Resistance Change ◽  
Mems Technology ◽  
Cmos Mems

This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 μm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor. This design has three merits: (1) low-cost post-CMOS process using metal/oxide wet etching, (2) composite sensing material based on ZnO-SnO2 coating on the CMOS-MEMS structure, (3) vertical integration of heater and ZnO-SnO2 gas-sensing films using CMOS-MEMS and drop casting technologies. Proposed design significantly increase the sensitivity at the high operating temperature. In summary, the sensitivity of presented sensor increased from 0.04%/% (O2/N2) at near room operating temperature to 0.2%/%(O2/N2) at near 140 °C for the range of 5–50% oxygen concentration.

scholarly journals Yttrium Doped TiO2 Thin Film for Gas Sensing Application Prepared by Spin Coating Method

2020 ◽  
Author(s):  
M Abdul Kaiyum ◽  
Naim Ahmed ◽  
Arif Alam ◽  
M Shamimur Rahman
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Low Cost ◽  
Pure Titanium ◽  
X Ray ◽  
Sensing Applications ◽  
Coating Method ◽  
Set Up ◽  
Spin Coater

Abstract Yttrium (Y) doped and pure Titanium Di-oxide (TiO2) thin films were prepared by using spin coater. The coater was set up in laboratory with low cost investment. The films were calcined at 450 °C for 1 hour. For characterization, Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDX), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Atomic Force Microscopy (AFM) were carried out. LCR Bridge - GW Instek LCR-821 was used for gas sensing applications. XPS showed that the change of electronic structure due to Y doping. SEM and AFM analysis were carried out to determine the surface morphology of the films. Yttrium (Y) decreased the crystallite size of the films and increased the surface roughness and porosity value, which was very good for many sensing applications. Gas sensing property of the deposited films were improved by the incorporation of yttrium impurities and the sensing property improved almost two times than pure TiO2 thin film. Different researches have been done their research related to this topic but no one researchers provide a precise explanation of their results, authors of this research have tried to do that. Moreover the films were prepared by a simple spin coater to reduce the production cost also.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 3610
Author(s):  
Adrián J. Torregrosa ◽  
Emir Karamehmedović ◽  
Haroldo Maestre ◽  
María Luisa Rico ◽  
Juan Capmany
Keyword(s):  
Optical Communications ◽  
Near Infrared ◽  
Nonlinear Crystal ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Infrared Image ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Oxide Semiconductor ◽  
Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

scholarly journals Silicon-On-Nothing IR-Emitter for Gas Sensing Applications

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1080
Author(s):  
Vladislav Komenko ◽  
Andrey Kravchenko ◽  
Wolf-Joachim Fischer
Keyword(s):  
Thermal Stability ◽  
Material Properties ◽  
Polycrystalline Silicon ◽  
Gas Sensing ◽  
Low Cost ◽  
Extreme Temperatures ◽  
Sensing Applications ◽  
Material Choice ◽  
Target Performance ◽  
Compact Design

Within the current work, we present a miniaturized IR-Emitter based on Silicon-On-Nothing (SON) technology capable of producing 10 ms pulses. Transition to monocrystalline silicon, as the material choice for the filament, is governed by improved reliability and greater thermal stability as opposed to polycrystalline silicon alternative, commonly used in such class of devices. Compact design, low-cost processing and exceptional filament material properties make the presented device a favorite solution for integrated gas sensing applications. Numerical modeling and measurements of the IR-Emitter are performed to investigate the heating dynamics and assess the structure’s behavior at extreme temperatures as well as confirm the target performance. Additionally, a part of the work is dedicated to cover the insight of used fabrication process and the discussion of further improvements.

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