scholarly journals Effect of Nanostructured Octahedral SnO2 Added with a Binary Mixture P-Type and N-Type Metal Oxide on CO Detection

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 986 ◽  
Author(s):  
Aymen Sendi ◽  
Philippe Menini ◽  
Myrtil L. Kahn ◽  
Katia Fajerwerg ◽  
Pierre Fau
Keyword(s):  
Binary Mixture ◽  
Metal Oxide ◽  
Low Energy ◽  
Ternary Mixtures ◽  
Oxide Semiconductors ◽  
Working Temperature ◽  
Binary And Ternary Mixtures ◽  
Low Energy Consumption ◽  
Co Detection ◽  
P Type

In this work, we study the effect of nanostructured octahedral SnO2 added with a binary mixture p-type and n-type metal oxide semiconductors of CuO and ZnO, on CO detection at two concentrations (100 ppm and 1000 ppm). These metal oxides (SnO2 and binary mixture of CuO75%/ZnO25%) are prepared in the form of a serigraphy paste and deposited on an optimized silicon micro-hotplate. The sensors can be operated at temperature of 550 °C with a low energy consumption of only 55 mW. The binary and ternary mixtures of metal oxide are operated at different working temperature to optimize their sensitivity to CO.

Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Metal Oxide Thin Film ◽  
P Type

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Author(s):  
Daniel Davies ◽  
Christopher Savory ◽  
Jarvist Moore Frost ◽  
David Scanlon ◽  
Benjamin Morgan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Small Polaron ◽  
High Mobility ◽  
Charge Carriers ◽  
Oxide Semiconductors ◽  
Hole Charge ◽  
Electron Phonon Coupling ◽  
Carrier Effective Mass ◽  
P Type

<div> <div> <div> <p>Metal oxides can act as insulators, semiconductors or metals depending on their chemical composition and crystal structure. Metal oxide semiconductors, which support equilibrium populations of electron and hole charge carriers, have widespread applications including batteries, solar cells, and display technologies. It is often difficult to predict in advance whether these materials will exhibit localized or delocalized charge carriers upon oxidation or reduction. We combine data from first-principles calculations of the electronic structure and dielectric response of 214 metal oxides to predict the energetic driving force for carrier localization and transport. We assess descriptors based on the carrier effective mass, static polaron binding energy, and Frohlich electron–phonon coupling. Numerical analysis allows us to assign p and n type transport of a metal oxide to three classes: (i) band transport with high mobility; (ii) small polaron transport with low mobility; and (iii) intermediate behaviour. The results of this classification agree with observations regarding carrier dynamics and lifetimes and are used to predict 10 candidate p-type oxides. </p> </div> </div> </div>

scholarly journals Interconnected metal oxide CNT fibre hybrid networks for current collector-free asymmetric capacitive deionization

2018 ◽  
Vol 6 (23) ◽  
pp. 10898-10908 ◽  
Author(s):  
Cleis Santos ◽  
Julio J. Lado ◽  
Enrique García-Quismondo ◽  
Inés V. Rodríguez ◽  
Daniel Hospital-Benito ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Carbon Nanotube ◽  
Metal Oxide ◽  
Current Collector ◽  
Low Energy ◽  
Hybrid Networks ◽  
Capacitive Deionization ◽  
Fibre Network ◽  
Low Energy Consumption ◽  
Network Morphology

A novel current collector-free electrode for capacitive deionization to treat brackish water, with low energy consumption and exceptional desalination properties directly linked to the nanoparticle metal oxide/carbon nanotube fibre network morphology.

Nanoparticle Design and Assembly for p-type Metal Oxide Gas Sensors

Nanoscale ◽  
2022 ◽  
Author(s):  
Byeonghoon Choi ◽  
Dongwoo Shin ◽  
Hee-Seung Lee ◽  
Hyunjoon Song
Keyword(s):  
Metal Oxide ◽  
Gas Sensors ◽  
High Stability ◽  
Wide Band ◽  
Band Gaps ◽  
Oxide Semiconductors ◽  
Nanoparticle Design ◽  
Metal Oxide Gas Sensors ◽  
Chemiresistive Gas Sensors ◽  
P Type

Metal oxide semiconductors have wide band gaps with tailorable electrical properties and high stability, suitable for chemiresistive gas sensors. p-Type oxide semiconductors generally have less sensitivity than n-type counterparts but...

scholarly journals Descriptors for Electron and Hole Charge Carriers in Metal Oxides

2019 ◽  
Author(s):  
Daniel Davies ◽  
Christopher Savory ◽  
Jarvist Moore Frost ◽  
David Scanlon ◽  
Benjamin Morgan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Small Polaron ◽  
High Mobility ◽  
Charge Carriers ◽  
Oxide Semiconductors ◽  
Hole Charge ◽  
Electron Phonon Coupling ◽  
Carrier Effective Mass ◽  
P Type

<div> <div> <div> <p>Metal oxides can act as insulators, semiconductors or metals depending on their chemical composition and crystal structure. Metal oxide semiconductors, which support equilibrium populations of electron and hole charge carriers, have widespread applications including batteries, solar cells, and display technologies. It is often difficult to predict in advance whether these materials will exhibit localized or delocalized charge carriers upon oxidation or reduction. We combine data from first-principles calculations of the electronic structure and dielectric response of 214 metal oxides to predict the energetic driving force for carrier localization and transport. We assess descriptors based on the carrier effective mass, static polaron binding energy, and Frohlich electron–phonon coupling. Numerical analysis allows us to assign p and n type transport of a metal oxide to three classes: (i) band transport with high mobility; (ii) small polaron transport with low mobility; and (iii) intermediate behaviour. The results of this classification agree with observations regarding carrier dynamics and lifetimes and are used to predict 10 candidate p-type oxides. </p> </div> </div> </div>

Energy saving technology for sintering of black bricks from high-siliceous clay

MRS Advances ◽  
2020 ◽  
Vol 5 (61) ◽  
pp. 3123-3131
Author(s):  
Mario Flores Nicolas ◽  
Marina Vlasova ◽  
Pedro Antonio Márquez Aguilar ◽  
Mykola Kakazey ◽  
Marcos Mauricio Chávez Cano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxygen Deficiency ◽  
Glass Ceramics ◽  
Total Content ◽  
Ceramic Materials ◽  
Ternary Mixtures ◽  
High Porosity ◽  
Reducing Conditions ◽  
Binary And Ternary Mixtures ◽  
Dark Color

AbstractThe low-temperature synthesis of bricks prepared from high-siliceous clays by the method of plastic molding of blanks was used. For the preparation of brick blanks, binary and ternary mixtures of high-siliceous clays, black sand, and bottle glass cullet were used. Gray-black low-porosity and high-porosity ceramics was obtained by sintering under conditions of oxygen deficiency. It has been established that to initiate plastic in mixtures containing high-siliceous clay, it is necessary to add montmorillonite/bentonite additives, carry out low-temperature sintering, and introduce low-melting glass additives with a melting point ranging from 750 to 800 °C. The performed investigations have shown that the sintering of mixtures with a total content of iron oxide of about 5 wt% under reducing conditions at Tsint. = 800°C for 8 h leads to the formation of glass ceramics consisting of quartz, feldspars, and a phase. The main sources of the appearance of a dark color is the formation of [Fe3+O4]4- and [Fe3+O6]9- anions in the composition of the glass phase and feldspars. By changing the contents of clay, sand, and glass in sintering, it is possible to obtain two types of ceramic materials: (a) in the form of building bricks and (b) in the form of porous fillers.

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