scholarly journals Carbon-Based Electrode Materials for Microsupercapacitors in Self-Powering Sensor Networks: Present and Future Development

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4231 ◽  
Author(s):  
A. Smith ◽  
Qi Li ◽  
Agin Vyas ◽  
Mohammad Haque ◽  
Kejian Wang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Electrode Materials ◽  
Current Collector ◽  
Oxide Semiconductor ◽  
Integration Scheme ◽  
Design Features ◽  
Device Scaling ◽  
Energy Demands ◽  
Circuit Fabrication ◽  
Carbon Based

There is an urgent need to fulfill future energy demands for micro and nanoelectronics. This work outlines a number of important design features for carbon-based microsupercapacitors, which enhance both their performance and integration potential and are critical for complimentary metal oxide semiconductor (CMOS) compatibility. Based on these design features, we present CMOS-compatible, graphene-based microsupercapacitors that can be integrated at the back end of the line of the integrated circuit fabrication. Electrode materials and their interfaces play a crucial role for the device characteristics. As such, different carbon-based materials are discussed and the importance of careful design of current collector/electrode interfaces is emphasized. Electrode adhesion is an important factor to improve device performance and uniformity. Additionally, doping of the electrodes can greatly improve the energy density of the devices. As microsupercapacitors are engineered for targeted applications, device scaling is critically important, and we present the first steps toward general scaling trends. Last, we outline a potential future integration scheme for a complete microsystem on a chip, containing sensors, logic, power generation, power management, and power storage. Such a system would be self-powering.

Single EXCCII-Based Analog Multiplier Structure

2020 ◽  
pp. 2150107
Author(s):  
Atul Kumar
Keyword(s):  
Integrated Circuit ◽  
Second Generation ◽  
Dynamic Range ◽  
Current Mode ◽  
Current Conveyor ◽  
Oxide Semiconductor ◽  
Analog Multiplier ◽  
Design Environment ◽  
Circuit Fabrication ◽  
Nmos Transistors

A simple analog multiplier circuit employing one current-mode active building block (ABB) and two n-channel metal-oxide semiconductor (NMOS) transistors is presented in this paper. The used ABB is extra-X second generation current conveyor. The used NMOS transistors are operated in triode region. The circuit has appropriate impedance level at the input and output terminals. Some other key features of the proposed circuit are as follows: suitable to integrated circuit fabrication, good dynamic range and low operating power supplies. The nonideal effects of extra-X second generation current conveyor on the proposed circuit are studied. Additionally, the layout of the proposed circuit is developed using Cadence VIRTUOSO Analog Design Environment with gpdk 0.18[Formula: see text][Formula: see text]m technology and post layout simulation results are given to verify the theoretical aspects.

‘Back end’ Chemical Cleaning in integrated Circuit Fabrication: a Tutorial

1997 ◽  
Vol 477 ◽  
Author(s):  
Yaw S. Obeng ◽  
R. S. Raghavan
Keyword(s):  
Integrated Circuit ◽  
Management Strategies ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Chemical Processing ◽  
Chemical Cleaning ◽  
Barrier Films ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Wet Chemical

ABSTRACTThe applications of wet chemical cleaning at the ‘back-end’ of Integrated Circuit (IC) or Metal-Oxide Semiconductor (MOS) fabrication are reviewed from chemical, environmental and cost perspectives. The various classes of commercially available “solvents” and “cryogenic” cleans are reviewed from the perspective of process suitability, impact on device yield and waste management. Strategies for minimizing processing concerns, as well as alternatives to organic solvent based wet chemical processing will also be discussed. Bulk photoresist (PR) stripping, post metal definition-, and post window etch cleaning are used to illustrate the discussion.The use of radiotracing as a diagnostic tool in understanding the mechanism for metallic contamination during solvent cleans is also discussed. Data suggesting how the chemistry and solvent composition affects alkali metal (for example, sodium) contamination of dielectric- and barrier films during IC processing will also be presented.

scholarly journals A Review of Electrospun Carbon Nanofiber-Based Negative Electrode Materials for Supercapacitors

Electrochem ◽  
2021 ◽  
Vol 2 (2) ◽  
pp. 236-250
Author(s):  
Arjun Prasad Tiwari ◽  
Tanka Mukhiya ◽  
Alagan Muthurasu ◽  
Kisan Chhetri ◽  
Minju Lee ◽  
...  
Keyword(s):  
Energy Storage ◽  
Electrode Materials ◽  
Carbon Nanofiber ◽  
Negative Electrode ◽  
Smart Devices ◽  
Potential Candidate ◽  
Free Standing ◽  
High Capacitance ◽  
Negative Electrode Materials ◽  
Carbon Based

The development of smart negative electrode materials with high capacitance for the uses in supercapacitors remains challenging. Although several types of electrode materials with high capacitance in energy storage have been reported, carbon-based materials are the most reliable electrodes due to their high conductivity, high power density, and excellent stability. The most common complaint about general carbon materials is that these electrode materials can hardly ever be used as free-standing electrodes. Free-standing carbon-based electrodes are in high demand and are a passionate topic of energy storage research. Electrospun nanofibers are a potential candidate to fill this gap. However, the as-spun carbon nanofibers (ECNFs) have low capacitance and low energy density on their own. To overcome the limitations of pure CNFs, increasing surface area, heteroatom doping and metal doping have been chosen. In this review, we introduce the negative electrode materials that have been developed so far. Moreover, this review focuses on the advances of electrospun nanofiber-based negative electrode materials and their limitations. We put forth a future perspective on how these limitations can be overcome to meet the demands of next-generation smart devices.

Evolution of Stress During Formation of Titanium Disilicide by Rta and Tube Furnace Annealing

1990 ◽  
Vol 202 ◽  
Author(s):  
J.F. Jongste ◽  
O.B. Loopstra ◽  
G.C.A.M. Janssen ◽  
S. Radelaar
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Reaction Rates ◽  
Titanium Disilicide ◽  
Furnace Annealing ◽  
Integrated Circuit Fabrication ◽  
Annealing Step ◽  
Circuit Fabrication ◽  
The Difference ◽  
Processing Steps

Integrated circuit fabrication consists of many processing steps: e.g. lithography, etching, implantation and metallization. Some of these processes are combined with thermal processing. Heat treatments require special attention because previous fabrication steps may be influenced: e.g. dopant profiles may be deteriorated. The amount of interference of an annealing step with a former process is determined by the ratio of the reaction rates (and hence by the difference in activation energies).

A Fresh Insight into Film Morphology Measurement Techniques for Advanced Ulsi Manufacturing

1993 ◽  
Vol 309 ◽  
Author(s):  
Seshadri Ramaswami
Keyword(s):  
Grain Size ◽  
Integrated Circuit ◽  
Measurement Techniques ◽  
Film Morphology ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Non Destructive ◽  
Fresh Insight ◽  
Insight Into

AbstractA laser based non-destructive technique has been used to study the morphology of sputterdeposited aluminum alloy films. The data emanating from the Therma-wave Imager that makes use of this principle, has been correlated with reflectivity, grain size and micro-roughness of the film. In addition, through the use of a case study, this paper demonstrates the utility of this application as an in-line monitor in an integrated circuit fabrication line.

Anthracite-derived carbon-based electrode materials for high performance lithium ion capacitors

2022 ◽  
Vol 228 ◽  
pp. 107146
Author(s):  
Min Zhong ◽  
Xiaopei Wang ◽  
Ye Huang ◽  
Li Li ◽  
Shenghui Gao ◽  
...  
Keyword(s):  
High Performance ◽  
Electrode Materials ◽  
Lithium Ion ◽  
Carbon Based

Transport and Interfacial Phenomena in Nanoscale Confined Laser Crystallization

2017 ◽  
Author(s):  
Wan Shou ◽  
Heng Pan
Keyword(s):  
Integrated Circuits ◽  
Single Crystal ◽  
Integrated Circuit ◽  
Amorphous Materials ◽  
Domain Size ◽  
Md Simulations ◽  
Integration Scheme ◽  
Crystal Formation ◽  
Recent Emergence ◽  
Confined Domains

Laser processing (sintering, melting, crystallization and ablation) of nanoscale materials has been extensively employed for electronics manufacturing including both integrated circuit and emerging printable electronics. Many applications in semiconductor devices require annealing step to fabricate high quality crystalline domains on substrates that may not intrinsically promote the growth of high crystalline films. The recent emergence of FinFETs (Fin-shaped Field Effect Transistor) and 3D Integrated Circuits (3D-IC) has inspired the study of crystallization of amorphous materials in nano/micro confined domains. Using Molecular Dynamics (MD) simulation, we study the characteristics of unseeded crystallization within nano/microscale confining domains. Firstly, it is demonstrated that unseeded crystallization can yield single crystal domains facilitated by the confinement effects. A phenomenological model has been developed and tailored by MD simulations, which was applied to quantitatively evaluate the effects of domain size and processing laser pulse width on single crystal formation. Secondly, to predict crystallization behaviors on confining walls, a thermodynamics integration scheme will be used to calculate interfacial energies of Si-SiO2 interfaces.

Sign in / Sign up

Export Citation Format

Share Document