scholarly journals DEVELOPMENT OF FAIL-SAFE CONTROL SYSTEMS AGAINST HEAVY CHARGED PARTICLES OF OUTER SPACE

2021 ◽  
Author(s):  
V. Zolnikov ◽  
I. Strukov ◽  
K. Chubur ◽  
Yu. Chevychelov ◽  
A. Yankov
Keyword(s):  
Fault Tolerance ◽  
Control Systems ◽  
Outer Space ◽  
Charged Particles ◽  
Combinational Circuits ◽  
Heavy Charged Particles ◽  
Safe Control ◽  
Fail Safe

This article discusses the development of effective methods and tools for assessing the fault tolerance of logical circuits, the mechanism of logical masking, the development of the route of re-synthesis of combinational circuits, methods for increasing fault tolerance. A method of iterative circuit modification is proposed, due to an increase in the level of logical masking of the circuit.

METHODS FOR ENSURING RESISTANCE TO HCP FOR CONTROL LOGIC AND STATIC MEMORY OF THE MICROPROCESSOR IN THE DESIGN

2020 ◽  
Vol 12 (4) ◽  
pp. 17-24
Author(s):  
Sergey Grechanyy ◽  
K. Chubur
Keyword(s):  
Fault Tolerance ◽  
Block Diagram ◽  
Charged Particles ◽  
Memory Cell ◽  
Combinational Circuits ◽  
Control Logic ◽  
Heavy Charged Particles ◽  
Critical Charge

The article describes methods for ensuring resistance to heavy charged particles (HCP) of the RAM block of the microprocessor. A description of the implementation and a block diagram of static memory based on dummy blocks is given. The paper considers methods of combating the biopolar effect, which are aimed at controlling the potential of the transistor body and reducing the resistance. The dependence of the critical charge of a SOI-memory cell the gain of a parasitic biopolar transistor is modeled. To increase the fault tolerance of combinational circuits consisting of control logic and decoder blocks, redundancy is applied at the level of individual valves.

ANALYSIS OF THE DESIGN QUALITY OF RAM BLOCKS AS PART OF MICROPROCESSOR SYSTEMS WITH MINIMUM FAULT TOLERANCE

2020 ◽  
Vol 12 (4) ◽  
pp. 47-55
Author(s):  
Vladimir Zolnikov ◽  
Yu. Chevychelov ◽  
V. Lavlinskiy ◽  
A. Achkasov ◽  
Akim Tolkachev ◽  
...  
Keyword(s):  
Fault Tolerance ◽  
Integrated Circuit ◽  
Charged Particles ◽  
Structural Scheme ◽  
Design Quality ◽  
Heavy Charged Particles ◽  
Fault Stability ◽  
Memory Circuit ◽  
Circuit Elements

The article is devoted to the design of RAM blocks as part of microprocessor systems and methods for ensuring fault tolerance. The structural scheme of RAM and the process of influence of heavy charged particles on the integrated circuit (IC) of memory are considered. Special attention is paid to the influence of the biopolar effect on the fault stability of the IC elements, as well as to the emerging multibit events. The article analyzes the various phases of RAM operation and the reactions of memory circuit elements to the occurrence of failures caused by the hit of HCP.

scholarly journals RESULTS OF TESTS OF CONTROL SYSTEMS ON EXPOSURE TO HEAVY CHARGED PARTICLES

2021 ◽  
Author(s):  
Konstantin Zolnikov ◽  
K. Tapero ◽  
Valeriy Suhanov ◽  
D. Chernov
Keyword(s):  
Control Systems ◽  
Radiation Effects ◽  
Charged Particles ◽  
Technological Equipment ◽  
Digital Converter ◽  
Heavy Charged Particles ◽  
Analog To Digital ◽  
Operating Modes ◽  
Integral Flux ◽  
Validity Criteria

The article discusses the results of the ERI tests for the effects of heavy charged particles. The data that arose during the irradiation of single radiation effects are presented. During the irradi-ation of the samples, the measurement of the integral flux (fluence) of ions was carried out using track detectors. To conduct the tests, technological equipment was used that implements the operating modes of the tested analog-to-digital converter and provides measurement of the parameters-the validity criteria. When irradiating samples with ions, the occurrence of a thyristor effect, cata-strophic failure and functional interruption effects were not recorded.

scholarly journals Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 55-62
Author(s):  
I. Yu. Lovshenko ◽  
V. R. Stempitsky ◽  
V. T. Shandarovich
Keyword(s):  
Charged Particle ◽  
Radiation Effects ◽  
Outer Space ◽  
Charged Particles ◽  
Drain Current ◽  
Heavy Charged Particle ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Heavy Charged Particles ◽  
The Impact

The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greatest influence is exerted by radiation effects caused by exposure to a heavy charged particle. The use of special design tools in the development of dual-purpose microcircuits, with increased resistance to the impact of heavy charged particles, prevents single events from occurring. Thus, the use of modern software products for device and technological modeling in microelectronics when developing the element base of radiation-resistant microcircuits for space purposes will cut the time to develop new products and make it possible to modernize (improve performance) already existing device and circuitry solutions. The paper delivers the results of modeling the impacts of heavy charged particles with a magnitude of linear energy transfer equal to 1.81, 10.1, 18.8, 55.0 MeV·cm2/mg, corresponding to nitrogen ions 15N+4 with an energy E = 1,87 MeV; argon 40Ar+12 with an energy E = 372 MeV; ferrum 56Fe+15 with an energy E = 523 MeV; xenon 131Xe+35 with an energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure. The dependences of the maximum drain current IС on the motion trajectory of a heavy charged particle and the ambient temperature are shown.

Circuit engineering methods for ensuring ECB resistance to the effects of heavy charged particles

2022 ◽  
Vol 14 (4) ◽  
pp. 35-42
Author(s):  
V. Zolnikov ◽  
F. Makarenko ◽  
I. Zhuravleva ◽  
Elena Popova ◽  
Yu. Gridnev ◽  
...  
Keyword(s):  
Fault Tolerance ◽  
Charged Particles ◽  
Electronic Component ◽  
Storage Device ◽  
Feedback Circuit ◽  
Heavy Charged Particles ◽  
Advantages And Disadvantages

The paper considers circuit engineering methods for protecting the electronic component base from the effects of heavy charged particles. One of the main methods is to increase the capacity of the device, which leads to an increase in the capacity of diffusion regions and a decrease in the frequency of single events. The structure of a capacitor is shown, which is connected to various nodes of the circuit to increase the sensitivity of the capacitance of the node. The article focuses on the method of using active RC circuits in the feedback circuit of a storage device cell. The advantages and disadvantages of the methods of using a storage device cell with internal redundancy are noted. The paper shows that the use of circuit engineering methods will provide the required level of fault and fault tolerance to the effects of heavy charged particles.

Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space

2021 ◽  
Author(s):  
A. S. Puzanov ◽  
V. V. Bibikova ◽  
I. Yu. Zabavichev ◽  
E. S. Obolenskaya ◽  
E. A. Tarasova ◽  
...  
Keyword(s):  
Outer Space ◽  
Charged Particles ◽  
Heavy Charged Particles

Fault-Tolerant and Fail-Safe Control Systems Using Remote Redundancy

2010 ◽  
Vol 28 (1) ◽  
pp. 38-43
Author(s):  
Echtle Klaus ◽  
Kimmeskamp Thorsten
Keyword(s):  
Control Systems ◽  
Fault Tolerant ◽  
Safe Control ◽  
Fail Safe

scholarly journals DEVELOPMENT OF MEANS FOR MONITORING THE PARAMETERS OF MICROCHIPS FOR ASSESSING RADIATION RESISTANCE

2021 ◽  
Author(s):  
Konstantin Zolnikov ◽  
I. Strukov ◽  
K. Chubur ◽  
Sergey Grechanyy ◽  
A. Yagodkin ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Radiation Resistance ◽  
Experimental Evaluation ◽  
Measuring Equipment ◽  
Outer Space ◽  
Charged Particles ◽  
Heavy Charged Particles

This article discusses the technical means of monitoring the performance of a special-purpose ECB for experimental evaluation of radiation resistance, in the absence of test measuring equipment that allows you to control the areas of the most degraded degradation when exposed to ionizing radiation and heavy charged particles of outer space.

Sign in / Sign up

Export Citation Format

Share Document