scholarly journals High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer

2022 ◽  
Author(s):  
Akiyoshi Inoue ◽  
Sakura Tanaka ◽  
Takashi Egawa ◽  
Makoto Miyoshi
Keyword(s):  
Current Density ◽  
Barrier Layer ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Device Fabrication ◽  
Breakdown Field ◽  
Field Plate ◽  
Order Of Magnitude ◽  
State Breakdown

Abstract In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. This breakdown field, as a comparison in devices without field-plate electrodes, reaches approximately four-fold higher than that for conventional GaN-channel HFETs and was considered quite reasonable as an Al0.36Ga0.64N-channel transistor. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer.

RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES

2006 ◽  
Vol 16 (02) ◽  
pp. 469-477
Author(s):  
Yasuhiro Uemoto ◽  
Yutaka Hirose ◽  
Tomohiro Murata ◽  
Hidetoshi Ishida ◽  
Masahiro Hikita ◽  
...  
Keyword(s):  
Noise Figure ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Low Noise ◽  
60 Ghz ◽  
Si Doping ◽  
Power Handling Capability ◽  
Source Resistance ◽  
State Breakdown ◽  
A Current

We present results of some novel AlGaN/GaN heterojunction field-effect transistors (HFETs) specifically developed for RF front-end and power applications. To reduce the parasitic resistance, two unique techniques: selective Si doping into contact area and a superlattice (SL) cap structure, are developed. With the selective Si doping method, a transistor with an on-state resistance as low as 1.86 Ω·mm and a Tx/Rx switch IC with very low insertion loss (0.26 dB) and very high power handling capability (P1dB over 40 dBm) were obtained. With the SL cap HFETs, an ultra low source resistance of 0.4 Ω·mm was achieved and excellent DC and RF performances were demonstrated. The typical characteristics of these HFETs are: maximum transconductance of over 400 mS/mm, maximum drain current of 1.2 A/mm, cut-off frequency of 60 GHz, maximum oscillation frequency of 140 GHz, and a very low noise figure of 0.7 dB with 15 dB gain at 12 GHz. For power applications, in order to significantly reduce fabrication cost, we fabricated the AlGaN/GaN HFET on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low on-state sheet resistance of 1.9 mΩ·cm2, a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching response with t r of 98 ps and t f of 96 ps with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

scholarly journals Breakdown Voltage Enhancement of Al0.1Ga0.9N channel HEMT With Recessed Floating Field Plate

2021 ◽  
Author(s):  
Ramkumar Natarajan ◽  
Eswaran Parthasarathy
Keyword(s):  
Breakdown Voltage ◽  
Hafnium Oxide ◽  
Figure Of Merit ◽  
Drain Current ◽  
Power Switching ◽  
High Power Microwave ◽  
Field Plate ◽  
State Breakdown ◽  
Power Microwave ◽  
Microwave Characteristics

Abstract In this paper, electrical and microwave characteristics of Al0.1Ga0.9N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 µm, gate to drain distance LGD = 1 µm, and HfO2(SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93(95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The proposed device DC characteristics are validated with reported expeimental work, which shows similar IDS and 54% and and 31% improvement in breakdown voltage on comparisons with conventional HEMT.

Normally-Off 4H-SiC Vertical JFET with Large Current Density

2008 ◽  
Vol 600-603 ◽  
pp. 1059-1062 ◽  
Author(s):  
Haruka Shimizu ◽  
Yasuo Onose ◽  
Tomoyuki Someya ◽  
Hidekatsu Onose ◽  
Natsuki Yokoyama
Keyword(s):  
Current Density ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Large Current ◽  
Blocking Voltage ◽  
Large Current Density ◽  
Abrupt Junction ◽  
Junction Field Effect Transistors

We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold voltage by forming the abrupt junction between the gate and the channel.

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

2012 ◽  
Vol 51 ◽  
pp. 090112 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Hisashi Sato ◽  
Yuichi Harada ◽  
Hideki Yamamoto ◽  
Makoto Kasu
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Passivation Layer

scholarly journals T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

2021 ◽  
Author(s):  
Rajan Singh ◽  
Trupti Lenka ◽  
Hieu Nguyen
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Power Devices ◽  
Field Plate ◽  
Maximum Value ◽  
Dimensional Electron Gas ◽  
State Breakdown ◽  
Rf Performance

In this paper, we report record DC and RF performance in β-Ga<sub>2</sub>O<sub>3</sub> High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length L<sub>HL</sub> of 180 nm and foot-length L<sub>FL</sub> of 120 nm is used in the highly scaled device with an aspect ratio (L<sub>G</sub>/t<sub>barrier</sub>) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 10<sup>13</sup> cm<sup>-2</sup>, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current I<sub>D,MAX</sub> of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance L<sub>SD</sub> of 1.9 µm exhibits record low specific-on resistance R<sub>ON,sp</sub> of 0.136 mΩ-cm<sup>–2</sup>, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm<sup>2</sup>. Additionally, current gain cut-off frequency f<sub>T</sub> and maximum oscillation frequency f<sub>MAX</sub> of 48 and 142 GHz are estimated. The obtained results show the potential of Ga<sub>2</sub>O<sub>3</sub> HEMT for futuristic power devices.

Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs with Regrown p++-Diamond Ohmic Contacts

2020 ◽  
pp. 1-1
Author(s):  
Shoichiro Imanishi ◽  
Ken Kudara ◽  
Hitoshi Ishiwata ◽  
Kiyotaka Horikawa ◽  
Shotaro Amano ◽  
...  
Keyword(s):  
Current Density ◽  
Ohmic Contacts ◽  
Drain Current
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