scholarly journals T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

2021 ◽  
Author(s):  
Rajan Singh ◽  
Trupti Lenka ◽  
Hieu Nguyen
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Power Devices ◽  
Field Plate ◽  
Maximum Value ◽  
Dimensional Electron Gas ◽  
State Breakdown ◽  
Rf Performance

In this paper, we report record DC and RF performance in β-Ga<sub>2</sub>O<sub>3</sub> High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length L<sub>HL</sub> of 180 nm and foot-length L<sub>FL</sub> of 120 nm is used in the highly scaled device with an aspect ratio (L<sub>G</sub>/t<sub>barrier</sub>) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 10<sup>13</sup> cm<sup>-2</sup>, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current I<sub>D,MAX</sub> of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance L<sub>SD</sub> of 1.9 µm exhibits record low specific-on resistance R<sub>ON,sp</sub> of 0.136 mΩ-cm<sup>–2</sup>, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm<sup>2</sup>. Additionally, current gain cut-off frequency f<sub>T</sub> and maximum oscillation frequency f<sub>MAX</sub> of 48 and 142 GHz are estimated. The obtained results show the potential of Ga<sub>2</sub>O<sub>3</sub> HEMT for futuristic power devices.

scholarly journals T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

2021 ◽  
Author(s):  
Rajan Singh ◽  
Trupti Lenka ◽  
Hieu Nguyen
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Power Devices ◽  
Field Plate ◽  
Maximum Value ◽  
Dimensional Electron Gas ◽  
State Breakdown ◽  
Rf Performance

In this paper, we report record DC and RF performance in β-Ga<sub>2</sub>O<sub>3</sub> High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length L<sub>HL</sub> of 180 nm and foot-length L<sub>FL</sub> of 120 nm is used in the highly scaled device with an aspect ratio (L<sub>G</sub>/t<sub>barrier</sub>) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 10<sup>13</sup> cm<sup>-2</sup>, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current I<sub>D,MAX</sub> of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance L<sub>SD</sub> of 1.9 µm exhibits record low specific-on resistance R<sub>ON,sp</sub> of 0.136 mΩ-cm<sup>–2</sup>, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm<sup>2</sup>. Additionally, current gain cut-off frequency f<sub>T</sub> and maximum oscillation frequency f<sub>MAX</sub> of 48 and 142 GHz are estimated. The obtained results show the potential of Ga<sub>2</sub>O<sub>3</sub> HEMT for futuristic power devices.

Effect of GaN Cap Layer on the Electrical Properties of AlGaN/GaN HEMT

2012 ◽  
Vol 217-219 ◽  
pp. 2393-2396 ◽  
Author(s):  
Han Guo ◽  
Wu Tang ◽  
Wei Zhou ◽  
Chi Ming Li
Keyword(s):  
Electrical Properties ◽  
Doping Concentration ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistor ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Gan Hemt ◽  
Cap Layer ◽  
Dimensional Electron Gas

The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software. This paper compares two structures, the HEMT with GaN cap layer and the HEMT without GaN cap layer. The sentaurus software simulates the DC and AC characteristics of the two AlGaN/GaN HEMT structures. The HEMT with GaN cap layer can increase the maximum transconductance gm from 177ms/mm to 399ms/mm when the doping concentration of the cap layer is 3×1018cm-3 compared with the other structure under the same conditions. The simulation results indicate that the HEMT with cap layer can increase maximum transconductance gm, saturation current Ids, current-gain cutoff frequency fT, maximum oscillation frequency fmax and reduce the series resistance of the drain to source compared with the HEMT without GaN cap layer. The large Ids of the HEMT with cap layer is attributed to the increase of the concentration of two dimensional electron gas (2DEG). Moreover, the change of the doping concentration of the cap layer will affect the gm and Ids.

scholarly journals Simulation Study of AlN Spacer Layer Thickness on AlGaN/GaN HEMT

2013 ◽  
Vol 4 ◽  
pp. 14-17 ◽  
Author(s):  
Niraj Man Shrestha ◽  
Yuen Yee Wang ◽  
Yiming Li ◽  
E. Y. Chang
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Conduction Band Offset ◽  
Gan Hemt ◽  
Maximum Value ◽  
Spacer Layer Thickness ◽  
Spacer Layer

High electron mobility transistor (HEMT)Two-dimensional electron gas (2DEG) formed at AlGaN/GaN interface is a critical part to tune the characteristic of AlGaN/GaN HEMT devices. Introduction of AlN spacer layer in between AlGaN and GaN layer is one of the way to improve 2DEG density, mobility, and drain current. Carrier concentration, mobility and conduction band offset for different spacer layer thickness was simulated by using Silvaco simulation tool. Our device simulations showed that carrier concentration, mobility are enhance on introduction of AlN spacer layer in HEMT. In addition, carrier properties of HEMT also depend on thickness of spacer layer. Our simulation showed that the mobility of 2DEG attains its maximum value at the 0.5 nm thick AlN layer but carrier concentration increases with spacer thickness. Finally, drain current increases with increasing spacer layer thickness and reach maximum value at 1.2nm thick spacer layer.The Himalayan Physics Vol. 4, No. 4, 2013 Page: 14-17 Uploaded date: 12/22/2013 

scholarly journals Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF Application

2021 ◽  
Author(s):  
Trupti Lenka ◽  
Rajan Singh ◽  
Deepak Kumar Panda ◽  
Hieu Nguyen
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Current Gain ◽  
High Electron ◽  
Two Dimensional ◽  
Saturation Current ◽  
Physical Explanation ◽  
Dimensional Electron Gas ◽  
Noise Amplification ◽  
First Time

Here we demonstrate a two-dimensional β-gallium oxide-based high electron mobility transistor (HEMT) comprising of a finite gap—access region gap (L_ARG ) in Ohmic-contact access regions with record transconductance linearity. Apart from limiting two-dimensional electron gas (2DEG) density n_s dependency on gate voltage, higher saturation current is estimated for the proposed design. Since the access regions length directly affects the Capacitance of the device and resultant switching applications. In this work, the effect of the gate-source and gate-drain length on device linearity is performed using Atlas-2D simulations. C-V characteristics of the proposed device are explained based on the physical explanation and validated using appropriate models. The higher values of transconductance g_m and current gain cut-off frequency f_T on a large span of operating voltages ensure improved transistor performance for low-noise amplification and RF application and are reported for the first time.<br>

scholarly journals Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF Application

2021 ◽  
Author(s):  
Trupti Lenka ◽  
Rajan Singh ◽  
Deepak Kumar Panda ◽  
Hieu Nguyen
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Current Gain ◽  
High Electron ◽  
Two Dimensional ◽  
Saturation Current ◽  
Physical Explanation ◽  
Dimensional Electron Gas ◽  
Noise Amplification ◽  
First Time

Here we demonstrate a two-dimensional β-gallium oxide-based high electron mobility transistor (HEMT) comprising of a finite gap—access region gap (L_ARG ) in Ohmic-contact access regions with record transconductance linearity. Apart from limiting two-dimensional electron gas (2DEG) density n_s dependency on gate voltage, higher saturation current is estimated for the proposed design. Since the access regions length directly affects the Capacitance of the device and resultant switching applications. In this work, the effect of the gate-source and gate-drain length on device linearity is performed using Atlas-2D simulations. C-V characteristics of the proposed device are explained based on the physical explanation and validated using appropriate models. The higher values of transconductance g_m and current gain cut-off frequency f_T on a large span of operating voltages ensure improved transistor performance for low-noise amplification and RF application and are reported for the first time.<br>

Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance

2016 ◽  
Vol 07 (03) ◽  
pp. 1672001 ◽  
Author(s):  
T. D. Subash ◽  
T. Gnanasekaran ◽  
P. Deepthi Nair
Keyword(s):  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Future Research ◽  
High Electron ◽  
High Electron Mobility ◽  
Cad Simulation ◽  
Hemt Structure ◽  
Improved Performance ◽  
Dimensional Electron Gas

The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation. As the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells, semiconductor cells and transistors. Special properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device [Pardeshi H., Pati S. K., Raj G., Mohankumar N., Sarkar C. K., J. Semicond. 33(12):124001-1–124001-7, 2012]. The maximum drain current density is achieved with improving the density of two-dimensional electron gas (2DEG) and with high velocity. High electron mobility transistor (HEMT) structure is used with the different combinations of layers which have different bandgaps. Parameters such as electron mobility, bandgap, dielectric constant, etc., are considered differently for each layer [Zhang A., Zhang L., Tang Z., IEEE Trans. Electron Devices 61(3):755–761, 2014]. The high electron mobility electrons are now widely used in so many applications. The proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.

scholarly journals Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement

2021 ◽  
Author(s):  
Jeetendra Singh ◽  
Archana Verma ◽  
Vijay Kumar Tewari ◽  
Shailendra Singh
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
Performance Enhancement ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Channel Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Rf Performance ◽  
The Impact

Abstract The need of performance enhancement at the RF and millimeter wave is highly desirable to eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable candidate which reduces about 70% channel temperature than sapphire. To achieve high performance, a GaN on the Silicon substrate high electron mobility transistor is designed and its various performance paramters are analyzed by varying the design specifications. Moreover, the problem of blocking voltage improvement is resolved by epitaxial design approach. Since, threshold voltage, doping-level, work-function of gate material and channel length are considered as some of the important parameters while device modeling. Therefore, the impact of these parameters is examined and analyzed to enehace the performance and reliability of the device for RF applications. The performance parameters like trans-conductance, drain current curves are plotted at different state of device physical and electrical parameters. Results exhibits maximum value of transconductance gm=13 milli-mho, minimum gate capacitance Cg=0.5pf, wheras Vth is varied between − 0.25 volts to 0.25 volts.

Analytical Study of ZnO-based HEMT for Power Switching

2021 ◽  
Author(s):  
Pawan Kumar ◽  
Sumit Chaudhary ◽  
Md Arif Khan ◽  
Sanjay Kumar ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Drain Current ◽  
Cost Effective ◽  
High Electron Mobility Transistor ◽  
Switching Frequency ◽  
Physical Parameters ◽  
High Electron ◽  
Ion Beam Sputtering ◽  
Power Switching ◽  
Group Iii

Abstract We investigate the power switching mechanism to evaluate the power loss ( P D ) and efficiency ( η ) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT), and physical parameters responsible for P D in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEMT and compare the performance with the group III-nitride HEMTs. This work extensively probes all physical parameters such as two-dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HEMT. Results suggest that the MBE and DIBS grown MZO HEMT with the gate width ( W G ) of ∼ 205 and ∼ 280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96 and 99.95% of η and 9.03 and 12.53 W of P D , respectively. Moreover, W G value for DIBS-grown MZO HEMT is observed to further reduce in the range of 112-168 mm by using a Y 2 O 3 spacer layer leading to the maximum η in the range of 99.98-99.97% and the minimum P D in the range of 5-7 W. This work is significant for the development of cost-effective HEMTs for power switching applications.

AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

scholarly journals High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer

2022 ◽  
Author(s):  
Akiyoshi Inoue ◽  
Sakura Tanaka ◽  
Takashi Egawa ◽  
Makoto Miyoshi
Keyword(s):  
Current Density ◽  
Barrier Layer ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Device Fabrication ◽  
Breakdown Field ◽  
Field Plate ◽  
Order Of Magnitude ◽  
State Breakdown

Abstract In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. This breakdown field, as a comparison in devices without field-plate electrodes, reaches approximately four-fold higher than that for conventional GaN-channel HFETs and was considered quite reasonable as an Al0.36Ga0.64N-channel transistor. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer.

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