Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Nano Research ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 143-148 ◽  
Author(s):  
Zhen Li ◽  
Yihang Liu ◽  
Anyi Zhang ◽  
Qingzhou Liu ◽  
Chenfei Shen ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Current Density ◽  
Field Effect ◽  
Oxygen Vacancies ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Two Dimensional ◽  
Interfacial Oxygen

Improvement of Short Channel Mobility and Operational Stability of Pentacene Bottom-Contact Transistors with a Sulfuric Acid and Hydrogen Peroxide Mixture (SPM) Treatment of Au Electrodes

2006 ◽  
Vol 965 ◽  
Author(s):  
Haruo Kawakami ◽  
Takahiko Maeda ◽  
Hisato Kato
Keyword(s):  
Hydrogen Peroxide ◽  
Sulfuric Acid ◽  
Contact Resistance ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Channel Length ◽  
Short Channel ◽  
Bottom Contact

ABSTRACTWe report a reduction in the contact resistance between pentacene and Au source/drain electrodes of organic field effect transistors (OFETs) with bottom-contact structure. By immersing the Au electrodes in a sulfuric acid and hydrogen peroxide mixture (SPM), the injection barrier between the Au electrodes and pentacene was lowered by approximately 0.2 eV and the contact resistance significantly decreased. The fabricated bottom-contact OFETs revealed a field-effect mobility of more than 0.66 cm2/Vs at a channel length ranging from 3 to 30 μm, which is comparable to that of top-contact OFETs with a 50 μm channel length. The transfer characteristics of the OFET with the SPM treatment were stable even after 44days storage in air under room illumination without any passivation. Moreover, the drain current reduction due to threshold voltage (Vth) shift under continuous application of gate voltage quickly recovered toward the original value with unloading of gate voltage.

Normally-Off 4H-SiC Vertical JFET with Large Current Density

2008 ◽  
Vol 600-603 ◽  
pp. 1059-1062 ◽  
Author(s):  
Haruka Shimizu ◽  
Yasuo Onose ◽  
Tomoyuki Someya ◽  
Hidekatsu Onose ◽  
Natsuki Yokoyama
Keyword(s):  
Current Density ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Large Current ◽  
Blocking Voltage ◽  
Large Current Density ◽  
Abrupt Junction ◽  
Junction Field Effect Transistors

We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold voltage by forming the abrupt junction between the gate and the channel.

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer

2012 ◽  
Vol 51 ◽  
pp. 090112 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Hisashi Sato ◽  
Yuichi Harada ◽  
Hideki Yamamoto ◽  
Makoto Kasu
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Passivation Layer

Semiconducting α'−boron sheet with high mobility and low all-boron contact resistance: A first-principles study

Nanoscale ◽  
2021 ◽  
Author(s):  
Jun-Jie Zhang ◽  
Tariq Altalhi ◽  
Jihui Yang ◽  
Boris I Yakobson
Keyword(s):  
Contact Resistance ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
First Principles Study ◽  
Metallic Electrodes

Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics....

scholarly journals Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping

2020 ◽  
Vol 12 (32) ◽  
pp. 36355-36361 ◽  
Author(s):  
Divya Somvanshi ◽  
Emanuel Ber ◽  
Connor S. Bailey ◽  
Eric Pop ◽  
Eilam Yalon
Keyword(s):  
Contact Resistance ◽  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors

An all two-dimensional vertical heterostructure graphene/CuInP2S6/MoS2 for negative capacitance field effect transistor

2021 ◽  
Author(s):  
Adeel Liaqat ◽  
Yiheng Yin ◽  
Sabir Hussain ◽  
Wen Wen ◽  
Juanxia Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Boltzmann Distribution ◽  
Oxide Semiconductor ◽  
Operating Voltage ◽  
Negative Capacitance ◽  
Two Dimensional ◽  
Physical Limit ◽  
Steep Slopes

Abstract As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called ‘Boltzmann tyranny’) implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV/dec at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP2S6/MoS2. The negative capacitance from the ferroelectric CuInP2S6 has enabled the breaking of the “Boltzmann tyranny”. The heterostructure-based device has shown steep slopes switching below 60 mV/dec (lowest to <10 mV/dec) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.

Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3Passivation Layer

2012 ◽  
Vol 51 (9R) ◽  
pp. 090112 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Hisashi Sato ◽  
Yuichi Harada ◽  
Hideki Yamamoto ◽  
Makoto Kasu
Keyword(s):  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current
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