scholarly journals Development of Analog Behavioural Model of BiMOSFET

2019 ◽  
Vol 8 (9) ◽  
pp. 1128-1131
Keyword(s):  
Gate Voltage ◽  
Semiconductor Device ◽  
Hammerstein Model ◽  
Detailed Knowledge ◽  
Fast Simulation ◽  
Reasonable Accuracy ◽  
Power Semiconductor ◽  
Behavioural Model ◽  
Application Engineer ◽  
Emitter Voltage

Behavioural modelling of a power semiconductor device offers many advantages to an application engineer as it is possible to model the device from the available datasheet without a detailed knowledge of the fabrication process. The development of an analog behavioural model for a BiMOSFET is undertaken here by using the Hammerstein model. The Hammerstein model is developed with static and dynamic block sub-blocks and is designed to respond for varying temperatures.The datasheet values of Ic and Vceare utilized to derive the static linear block,while the dynamic block is modelled as Hammerstein current source.The developed model of the BiMOSFET has been verified for its terminal characteristics through OrCAD simulations and hardware testing. The developed model of BiMOSFETexhibits fast simulation times with reasonable accuracy. The hardware testing is carriedout with BiMOSFET IXBF55N300 by observing its currents and voltages under the variation of gate voltage at constant collector emitter voltage and variation of collector emitter voltage at constant gate voltage.

A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop

2021 ◽  
Vol 16 (5) ◽  
pp. 762-765
Author(s):  
Hae Seock Lee ◽  
Geon Hee Lee ◽  
Byoung Sup Ahn ◽  
Ey Goo Kang
Keyword(s):  
Breakdown Voltage ◽  
Semiconductor Device ◽  
Voltage Drop ◽  
Bipolar Transistor ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor ◽  
Voltage Loss ◽  
One Step ◽  
Junction Transistor ◽  
Off Time

Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment was conducted by forming a two-step field stop. Through concentration control between steps, breakdown voltage, On-state Voltage drop and turn off time could be adjusted in detail, and efficient characteristic values could be obtained accordingly. Experiments have confirmed that the On state voltage drop and turn-off time, in particular, can be adjusted by small failure voltage loss upon change in the first stage field stop.

Bandgap engineering in Si1−xCx by substitutional doping: First-principle calculations

2020 ◽  
Vol 34 (31) ◽  
pp. 2050306
Author(s):  
Yulong Wang ◽  
Baoxing Duan ◽  
Yintang Yang
Keyword(s):  
Semiconductor Device ◽  
Energy Gap ◽  
First Principles Calculation ◽  
Bandgap Engineering ◽  
Power Semiconductor ◽  
Text Type ◽  
Substitutional Doping ◽  
Novel Approach ◽  
First Time ◽  
Device Operation

In this paper, a novel approach is presented for the first time to increase the energy gap of Si-based material by doping carbon atoms into Si-based material structures. The structural electronic properties and mechanical properties of [Formula: see text] ([Formula: see text], 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4) are investigated using a first-principles calculation method. Bandgaps of the [Formula: see text] shells were found to have, respectively, quadratic relationships with the Carbon content [Formula: see text]. Meanwhile, the electronic bandgap of Si-based material can be increased by 0.334 eV due to the carbon substitutions. The optimal structure is [Formula: see text] and the elastic constants and phono calculations reveal that [Formula: see text] is mechanically and dynamically stable. Finally, two different heavy doped [Formula: see text] have been investigated and the results indicate that the [Formula: see text]-type and [Formula: see text]-type doped [Formula: see text] do produce shallow levels. This study can be a theoretical guidance to improve the bandgap of Si-based semiconductors. In addition, [Formula: see text] show superior bandgap and material properties enabling [Formula: see text] power device operation at higher temperatures, voltages than current Si-based power semiconductor device.

Clustered insulated gate bipolar transistor: a new power semiconductor device

2001 ◽  
Vol 148 (2) ◽  
pp. 75 ◽  
Author(s):  
M. Sweet ◽  
O. Spulber ◽  
J.V. Subhas Chandra Bose ◽  
L. Ngwendson ◽  
K.V. Vershinin ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Bipolar Transistor ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor

Development of New Complex Machining Technology for Single Crystal Silicon Carbide Polishing

2016 ◽  
Vol 10 (5) ◽  
pp. 786-793
Author(s):  
Tsuneo Kurita ◽  
◽  
Koji Miyake ◽  
Kenji Kawata ◽  
Kiwamu Ashida ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Semiconductor Device ◽  
Single Crystal Silicon ◽  
High Hardness ◽  
Electrochemical Technique ◽  
Crystal Silicon ◽  
Abrasive Particles ◽  
Power Semiconductor ◽  
Device Applications

Single-crystal, silicon carbide (SiC) wafers surpass silicon in terms of voltage resistance and heat resistance, and show promise for use in power semiconductor device applications. The aim of this research is to develop a complex machining technology for SiC, which is known to be difficult to process owing to its high hardness. This paper proposes a complex machining method based on converting SiC into a material with a relatively low hardness, and then polishing it using abrasive particles with a higher hardness. The proposed polishing method uses either a photodissociation or an electrochemical technique to reduce the hardness of SiC. The effectiveness of the combined technique is experimentally demonstrated. In addition, a method is proposed for monitoring the processing state by measuring the electric current.

Sign in / Sign up

Export Citation Format

Share Document