scholarly journals Study and Prepared of CuS Thin Films by Ultrasonic Nebulizer Method

2019 ◽  
Vol 25 (105) ◽  
pp. 293-303
Author(s):  
Hiba R. Shakir ◽  
Salah. Q. Haza’a
Keyword(s):  
Force Measurement ◽  
Optical And Electrical Properties ◽  
Energy Band Gap ◽  
Ultrasonic Nebulizer ◽  
Glass Substrates ◽  
Atomic Force ◽  
Optical Energy Band Gap ◽  
P Type ◽  
Different Thickness ◽  
Heated Glass

  Thin Film of copper sulfide with different thickness (100, 200 and 300) nm have been prepared on pre-heated glass substrates up to (330oC) by Ultrasonic Nebulizer Deposition (UND). The effect of thickness on the structural, optical, and electrical properties of films has been investigated.  The results of the XRD show that the film which deposited with thickness CuS phase with (103) orientation. Atomic force measurement showed the grain size increase with thickness in the range of (76.91-101.32 nm). The optical properties of the films have been studied over a wavelength (370-1100)nm.  The calculated optical energy band gap values were between 2.55 and 2.62eV, depending on the film thickness and in which phase crystallized. The effect of thickness on the electric properties the films have a positive Hall coefficient (p-type), the hall effect increases as thickness increase this due to inversely depend RH  on  carrier concentration.

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

Optical and Electrical Properties of SnS: Ag Films as Solar Cell Absorbers

2009 ◽  
Vol 60-61 ◽  
pp. 11-15 ◽  
Author(s):  
Pe Min Lu ◽  
Hong Jie Jia ◽  
Shu Ying Cheng
Keyword(s):  
X Ray Diffraction ◽  
Average Roughness ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Semiconducting Properties ◽  
Direct Band ◽  
Diffraction Peaks ◽  
P Type

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation successively, then they were annealed in N2 ambience at a temperature of 300 oC for 2h. By controlling the Ag evaporation voltage to roughly alter content of Ag in SnS films, different Ag-doped SnS films were obtained. The microstructures, composition and properties of the films were characterized with X-ray diffraction ( XRD ), atomic force microscopy(AFM) and some other methods. With the increase of Ag evaporation voltage (VAg), there exist new phases of Ag8SnS6 and Ag2S, whose intensity of diffraction peaks increases with the increasing Ag-dopant, and the average roughness of the films varies from 18.7nm to 23.6nm, and grain size increases from 192nm to 348nm. With the increase of VAg, the evaluated direct band gap Eg of the films decreases from 2.28eV(undoped) to 2.05eV (VAg=70V), the carrier concentration value and Hall mobility of the films diminishes from 2.048×1014cm-3 and 25.96 cm2.v-2.s-1 to 1.035×1016 cm-3 and 5.66 cm2.v-2.s-1, respectively; while the resistivity of the films decreases sharply from 1174Ω.cm(undoped ) to 107Ω.cm (VAg=70V ). All the films are of p-type conductivity. The above results show that the semiconducting properties of the SnS films have been improved by silver-doping.

Optical Properties Of Tantalum Oxide Films Deposited On BK7 Substrates By Excimer Laser Ablation

2000 ◽  
Vol 617 ◽  
Author(s):  
S. Boughaba ◽  
M. U. Islam
Keyword(s):  
Optical Properties ◽  
Laser Ablation ◽  
Band Gap ◽  
Energy Band ◽  
Tantalum Oxide ◽  
Energy Band Gap ◽  
Optical Energy ◽  
Extinction Coefficients ◽  
Glass Substrates ◽  
Optical Energy Band Gap

AbstractThin amorphous films of tantalum oxide were grown on borosilicate crown glass substrates by KrF excimer pulsed laser ablation of a Ta2O5 target, in an oxygen environment. The deposition was performed at a temperature of 250 or 400 °C, while the oxygen pressure was set in the range 5 to 30 mTorr. The optical properties of the tantalum oxide coatings, as evaluated by reflectance/transmittance spectrophotometry, were found to be dependent on the oxygen gas pressure. At a pressure of 5 mTorr, absorbing films were obtained, with extinction coefficients above 10−2 (at λ=633 nm), along with an optical energy band-gap as low as 0.7 eV. At a pressure of 10 mTorr and above, the coatings had refractive indices up to 2.25 (at λ=633 nm), extinction coefficients below 10−4 (for λ>390 nm), and an optical energy band-gap in the range 3.9 to 4.0 eV.

Effect of Thicknesses on the Optical and Electrical Properties of Ag Films on PET Substrates

2009 ◽  
Vol 79-82 ◽  
pp. 655-658 ◽  
Author(s):  
Jing Lv ◽  
Sheng Ni Zhang
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Critical Thickness ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Bulk Silver ◽  
Ag Film

A series of Ag films with different thicknesses were prepared on polyethylene terephthalate (PET) substrates under identical conditions by thermal evaporation. The effect of the thickness on the optical and electrical properties of the films was studied. The morphology of the samples was investigated by atomic force microscopy (AFM). The optical and electrical properties were measured by spectrophotometer and four-point probe method, respectively. The experimental results show that the reflectance increases, while transmittance and resistivity decrease with the increase of the thickness. There exists a critical thickness of the film and it is 75 nm in this experiment. The optical and electrical properties of Ag films on PET substrates with thickness larger than critical thickness, are close to those of the conventional bulk silver. The resistivity of the 150-nm film is 3.0±0.2 μΩ•cm, which is lower than that of the 250-nm Ag film grown on BK-7 glass substrates.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

scholarly journals Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Phase ◽  
Structural Disorder ◽  
Energy Band Gap ◽  
Nitrogen Doped ◽  
Nio Thin Film ◽  
Direct Band ◽  
Output Characteristics ◽  
Indirect Band Gap ◽  
P Type

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

Optical and Mechanical Properties of Aluminum Film Deposited on Glass Substrate

2010 ◽  
Vol 297-301 ◽  
pp. 444-449 ◽  
Author(s):  
Shiuh Chuan Her ◽  
Yi Hsia Wang
Keyword(s):  
Wavelength Region ◽  
Aluminum Film ◽  
Surface Topology ◽  
Aluminum Films ◽  
Glass Substrates ◽  
Atomic Force ◽  
Environmental Test ◽  
Optical Applications ◽  
Optical And Mechanical Properties ◽  
Al Thin Film

The aluminum film with high reflectivity and low absorption in the visible wavelength region has been widely used in optical applications. In this investigation, aluminum films were prepared on glass substrates by electron-beam vapor deposition. The reflectivity of the Al thin film was measured by a Perkin-Elmer Lambda spectrophotometer in the wavelength region of 450-680 nm. The experimental measurements of reflectivity were validated with the numerical results using the Essential Macleod software. The surface topology and microstructure of the film were examined by means of atomic force microscope (AFM). The effects of the temperature and humidity on the reflectivity of the Al film were examined by the environmental test. Nanoindentation tests were employed to determine the hardness and Young’s modulus of the film. The measured hardness of the Al thin films were found to depend on the penetration depth.

Preparation and Properties of CdTe Films on Mo/Glass Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vello Valdna ◽  
Maarja Grossberg ◽  
Hiie Jaan ◽  
Urve Kallavus ◽  
Valdek Mikli ◽  
...  
Keyword(s):  
Cadmium Chloride ◽  
Radiation Detectors ◽  
Cdte Film ◽  
Chloride Flux ◽  
Type Conductivity ◽  
Coated Glass ◽  
Glass Substrates ◽  
Group I ◽  
Cdte Films ◽  
P Type

AbstractShort-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type
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