DUAL SPHERICAL ELECTRIC FIELD VOLTAGE SENSOR

Author(s):  
С.В. Бирюков ◽  
А.В. Тюкин ◽  
Л.В. Тюкина

Мы живем в мире высоких энергетических технологий, способных передавать электрическую энергию на большие расстояния. Эту энергию невозможно сосредоточить только внутри передающих энергетических систем. Она выплескивается наружу в виде электрических полей. Эти электрические поля неблагоприятно воздействуют на окружающую среду, технические и биологические объекты. В связи с этим необходимо контролировать уровни электрических полей, важной характеристикой которых является напряженность электрического поля. Для восприятия электрического поля необходимы датчики напряженности электрического поля. Существующие датчики неудобны в эксплуатации и имеют высокую погрешность восприятия напряженности электрического поля, достигающую ± 20%. Bыдвигается идея создания универсального датчика нового вида, относящeгося к виду сдвоенных датчиков. Его универсальность заключается в том, что он воплощает в себе все виды известных датчиков - одинарные, сдвоенные и теперь еще двойные. Погрешность восприятия напряженности неоднородного электрического поля сдвоенных датчиков не превышает +5 % во всем пространственном диапазоне измерения 0£ a £1. При этом расстояние d до источника поля ограничено только радиусом сферического основания датчика, т.е. d » R , в то время как для датчиков, входящих в состав сдвоенного датчика, в том же пространственном диапазоне измерение погрешности составляет ± 35 %. Используя сдвоенный датчик, можно добиться значительного повышения точности измерения напряженности неоднородных электрических полей в широком пространственном диапазоне измерений по сравнению с известными датчиками We live in a world of high energy technologies capable of transmitting electrical energy over long distances. This energy cannot be concentrated only within the transmitting energy systems. It spills out in the form of electric fields. These electric fields adversely affect the environment, technical and biological objects. In this regard, it is necessary to control the levels of electric fields, an important characteristic of which is the strength of the electric field. Sensors of the electric field strength are required to sense the electric field. The existing sensors are inconvenient in operation and have a high error in the perception of the electric field strength, reaching ± 20%. In the work under consideration, the idea of creating a universal sensor of a new type, related to the type of dual sensors, is put forward. Its versatility lies in the fact that it embodies all types of known sensors - single, twin, and now dual. The error in the perception of the intensity of the inhomogeneous electric field of the dual sensors does not exceed + 5% in the entire spatial measurement range 0£ a £1. In this case, the distance d to the field source is limited only by the radius of the spherical base of the sensor, i.e. d » R . At the same time, for sensors that are part of a dual sensor in the same spatial measurement range, the error is ± 35%. Using a dual sensor, it is possible to achieve a significant increase in the accuracy of measuring the strength of inhomogeneous electric fields in a wide spatial measurement range in comparison with known sensors.

2021 ◽  
pp. 62-67
Author(s):  
S. V. Biryukov ◽  
◽  
L. V. Tyukina ◽  
A. V. Tyukin ◽  
◽  
...  

These electric fields adversely affect the environment, technical and biological objects. In this regard, it is necessary to control the levels of electric fields, an important characteristic of which is the strength of the electric field. Sensors of the electric field strength are required to sense the electric field. The existing sensors are inconvenient in operation and have a high error in the perception of the electric field strength, reaching  20 %. In the work under consideration, the idea of creating a universal sensor of a new type, related to the type of dual sensors, is put forward. Its versatility lies in the fact that it embodies all types of known sensors — single, double, and now twin. The error in the perception of the intensity of the inhomogeneous electric field of the dual sensors does not exceed + 5 % in the entire spatial measurement range 0a1. In this case, the distance d to the field source is limited only by the radius of the spherical base of the sensor, i.e. d  R. At the same time, for sensors that are part of a dual sensor in the same spatial measurement range, the error is  35 %. Using a dual sensor, it is possible to achieve a significant increase in the accuracy of measuring the strength of inhomogeneous electric fields in a wide spatial measurement range in comparison with known sensors.


2020 ◽  
pp. 67-73
Author(s):  
S. V. Biryukov ◽  

Measuring the parameters of electric fields affecting technical and biological objects is impossible without the use of electric field strength sensors. Accurate measurement and control of electric field strength levels is challenging. This is due to the fact that the intensity is a vector quantity, characterized not only by the modulus, but also by the direction. The existing wide variety of strain gauges of various shapes (cubic, cylindrical, spherical), the principle of action (directional and non-directional reception) and design features (case, bodyless) do not provide the desired metrological characteristics. Therefore, the work related to the development of electric field strength sensors does not stand still and is relevant. The aim of the study is to create a frameless threeaxis sensor of electric field strength, the calculation of which would be simple as for the case, and the simplicity of design and low weight as for the frameless sensors. The sensor created as a result of research is structurally represented by three mutually perpendicular dielectric disks, the bases of which are conducting sensitive elements. The sensor depending on the desired error has a different spatial measurement range and the larger the error, the wider the range. For a measurement error not exceeding 10 %, the maximum possible spatial measurement range will be a = 0,4. Therefore, the minimum possible distance to the field source, at which the sensor error does not go beyond 10 %, will be d = 2,5R, where R is the radius of the sensor disk


2018 ◽  
Vol 9 ◽  
pp. 1544-1549 ◽  
Author(s):  
Margarita A Kurochkina ◽  
Elena A Konshina ◽  
Daria Khmelevskaia

We have experimentally investigated the effect of the reorientation of a nematic liquid crystal (LC) in an electric field on the photoluminescence (PL) of CdSe/ZnS semiconductor quantum dots (QDs). To the LC with positive dielectric anisotropy, 1 wt % QDs with a core diameter of 5 nm was added. We compared the change of PL intensity and decay times of QDs in LC cells with initially planar or vertically orientated molecules, i.e., in active or passive LC matrices. The PL intensity of the QDs increases four-fold in the active LC matrix and only 1.6-fold in the passive LC matrix without reorientation of the LC molecules. With increasing electric field strength, the quenching of QDs luminescence occurred in the active LC matrix, while the PL intensity did not change in the passive LC matrix. The change in the decay time with increasing electric field strength was similar to the behavior of the PL intensity. The observed buildup in the QDs luminescence can be associated with the transfer of energy from LC molecules to QDs. In a confocal microscope, we observed the increase of particle size and the redistribution of particles in the active LC matrix with the change of the electric field strength. At the same time, no significant changes occurred in the passive LC matrix. With the reorientation of LC molecules from the planar in vertical position in the LC active matrix, quenching of QD luminescence and an increase of the ion current took place simultaneously. The obtained results are interesting for controlling the PL intensity of semiconductor QDs in liquid crystals by the application of electric fields.


1967 ◽  
Vol 22 (12) ◽  
pp. 1890-1903
Author(s):  
F. Karger

In a previous paper31 discrepancies between theory and experiment were found on investigating the positive column in a curved magnetic field. The approximation derived in 31 for the torus drift in a weakly ionized magnetoplasma is therefore checked here (Part I) with a refined theory which also yields the transverse electric field strength. Experimentally, both the transverse electric fields and the density profiles in the DC discharge were determined in addition to the longitudinal electric field strength.The discrepancies occurring in 31 are ascribed to the fact that the plasma concentrates at the cathode end of the magnetic field coils, this effect having a considerable influence on the form of the transverse density profile and on the stability behaviour. Part II later will show how the influence of this concentration can be eliminated and what effect in the current-carrying toroidal plasma causes a marked reduction of the charge carrier losses.


1971 ◽  
Vol 43 ◽  
pp. 417-421
Author(s):  
A. B. Severny

It is observed that the change of the net magnetic flux associated with flares can exceed 1017 Mx/s, which corresponds according to Maxwell's equation to the e.m.f. ∼ 109 V which is specific for the high energy protons generated in flares. It is shown that this value of e.m.f. can hardly be compensated by e.m.f. of inductance which should appear due to the actually measured motions in a flare generating active region. The values of electric field strength thus found, together with measured values of electric current density (from rotH), leads to an electric conductivity which is 103 times smaller than usually adopted.


2007 ◽  
Vol 13 (2) ◽  
pp. 83-90 ◽  
Author(s):  
H. Zhang ◽  
Z. Wang ◽  
R.-J. Yang ◽  
S.-Y. Xu

Pulsed electric fields (PEF) were applied to neutral ginkgo cloudy juice to study the influence of the electric field strength, the treatment time and temperature on microbial inactivation. The results showed that microbial inactivation increased with the electric field strength, the treatment time and temperature. PEF treatment caused 3.39 and 4.44-log cycles reduction of coliforms and total plate counts, respectively, when pulse duration was 3 μs, the electric field strength 30 kV/cm, the treatment time 520 μs and the water bath temperature 15°C. Under the same conditions, the microbial shelf life of ginkgo cloudy juice was extended to 24 days at 4°C and 18 days at room temperature. A 3.7-log cycles reduction of the total yeast and mould counts was obtained by applying 390 μs of 30 kV/cm at 15°C.Yeast and mould cells were less resistant to PEF process than bacteria cells. The effect of heat generated during the PEF treatment was limited on microbial inactivation. Temperature and the induced heat by PEF had synergistic effects to microbial inactivation in cloudy ginkgo juice.


2012 ◽  
Vol 706-709 ◽  
pp. 2617-2621
Author(s):  
Chang Shu He ◽  
Xiang Zhao ◽  
Wei Ping Tong ◽  
Liang Zuo

Specimens cut from a cold-rolled IF steel sheet of 1 mm thickness were respectively annealed at 750°C for 20min under a range of DC electric fields (1kV/cm~4kV/cm). The Effect of electric field strength on recrystallization texture of IF steel sheet was studied by mean of X-ray diffraction ODF analysis. It was found that γ-fiber textures were notably enhanced as electric field strength increased. The strength of γ-fiber textures got their peak values as the applied electric field reached to 4kV/cm. The possible reason for such phenomena was discussed in the viewpoint of interaction between the applied electric field and the orientation-dependent stored-energy in deformed metals which is known as the driving force for recrystallization during annealing.


2009 ◽  
Vol 60-61 ◽  
pp. 330-333
Author(s):  
Wei Chih Chen ◽  
Ting Fu Hong ◽  
Wen Bo Luo ◽  
Chang Hsien Tai ◽  
Chien Hsiung Tsai ◽  
...  

This paper presented a parametric experimental study of electrokinetic instability phenomena in a cross-shaped configuration microfluidic device with varying channel depths and conductivity ratios. The flow instability is observed when applied electric field strength exceeds a certain critical value. The critical electric field strength is examined as a function of the conductivity ratio of two samples liquid, microchannel depth, and the treatment of microchannel wetted surface. It is found that the critical electric field strengths for the onset of electrokinetic instability are strongly dependent on the conductivity ratio of two samples liquid, and decrease as the channel depths increasing of microfluidic devices. In the present study, the surface inside microchannels is treated utilizing hydrophilic and hydrophobic organic-based SOG (spin-on-glass) nanofilms for glass-based microchips. The experimental results indicate that no significant difference for the critical electric fields for the onset of electrokinetic instability phenomena in both hydrophilic and hydrophobic SOG coating in the surface of microchannels. The critical electric fields for the onset of electrokinetic instability phenomena are slightly lower in both SOG coated cases in compare with that of the non-coated microchannel.


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