scholarly journals Effect of Ag loading position on the photocatalytic performance of TiO2 nanocolumn arrays

2020 ◽  
Vol 11 ◽  
pp. 717-728
Author(s):  
Jinghan Xu ◽  
Yanqi Liu ◽  
Yan Zhao
Keyword(s):  
High Performance ◽  
Photocatalytic Performance ◽  
Atomic Layer ◽  
Theoretical Simulation ◽  
Solar Energy Harvesting ◽  
Layer Deposition ◽  
Absorption Of Light ◽  
Energy Conversion And Storage ◽  
And Storage ◽  
Photocatalytic Applications

Plasmonic metal/semiconductor composites have attracted great attention for efficient solar energy harvesting in photovoltaic and photocatalytic applications owing to their extremely high visible-light absorption and tuned effective band gap. In this work, Ag-loaded TiO2 nanocolumn (Ag-TNC) arrays were fabricated based on anodic aluminum oxide (AAO) template by combining atomic layer deposition (ALD) and vacuum evaporation. The effects of the Ag loading position and deposition thickness, and the morphology, structure and composition of Ag-deposited TNC arrays on its optical and photocatalytic properties were studied. The Ag-filled TiO2 (AFT) nanocolumn arrays exhibited higher removal efficiency of methylene blue (MB) compared with Ag-coated TiO2 (ACT) nanocolumn arrays and pure TiO2 nanocolumns arrays. Both experimental and theoretical simulation results demonstrated that the enhanced photocatalytic performance of AFT nanocolumn arrays was attributed to the surface plasmon resonance (SPR) of Ag and the absorption of light by TiO2. These results represent a promising step forward to the development of high-performance photocatalysts for energy conversion and storage.

Nanoengineering Energy Conversion and Storage Devices via Atomic Layer Deposition

2016 ◽  
Vol 6 (23) ◽  
pp. 1600468 ◽  
Author(s):  
Liaoyong Wen ◽  
Min Zhou ◽  
Chengliang Wang ◽  
Yan Mi ◽  
Yong Lei
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Conversion ◽  
Atomic Layer ◽  
Storage Devices ◽  
Layer Deposition ◽  
Energy Conversion And Storage ◽  
And Storage

Controllable Synthesis of Ultrathin Layered Transition Metallic Hydroxide/Zeolitic Imidazolate Framework-67 Hybrid Nanosheets for High-Performance Supercapacitors

2021 ◽  
Author(s):  
Chunli Liu ◽  
Yang Bai ◽  
Ji Wang ◽  
Ziming Qiu ◽  
Huan Pang
Keyword(s):  
Charge Transfer ◽  
Energy Conversion ◽  
High Performance ◽  
2D Materials ◽  
Two Dimensional ◽  
Controllable Synthesis ◽  
Zeolitic Imidazolate Framework ◽  
Fast Charge ◽  
Energy Conversion And Storage ◽  
And Storage

Two-dimensional (2D) materials with structures having diverse features are promising for application in energy conversion and storage. A stronger layered orientation can guarantee fast charge transfer along the 2D planes...

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  
Keyword(s):  
Energy Storage ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electrochemical Energy Storage ◽  
Layer Deposition ◽  
Electrochemical Energy

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Sign in / Sign up

Export Citation Format

Share Document