scholarly journals A SLIPPERY SLOPE: SYSTEMATIC UNCERTAINTIES IN THE LINE WIDTH BARYONIC TULLY–FISHER RELATION

2016 ◽  
Vol 832 (1) ◽  
pp. 11 ◽  
Author(s):  
Jeremy D. Bradford ◽  
Marla C. Geha ◽  
Frank C. van den Bosch
Keyword(s):  
Line Width ◽  
Slippery Slope ◽  
Systematic Uncertainties ◽  
Fisher Relation

The 21 centimeter line width as an extragalactic distance indicator. II - Does the Tully-Fisher relation depend on Hubble type

1982 ◽  
Vol 254 ◽  
pp. 8 ◽  
Author(s):  
G. de Vaucouleurs ◽  
R. Buta ◽  
L. Bottinelli ◽  
L. Gouguenheim ◽  
G. Paturel
Keyword(s):  
Line Width ◽  
Distance Indicator ◽  
Fisher Relation

scholarly journals Corrections for Velocity Dispersion in the Tully-Fisher Relation

1983 ◽  
Vol 6 ◽  
pp. 283-285
Author(s):  
L. Bottinelli ◽  
L. Gouguenheim ◽  
G. Paturel ◽  
G. de Vaucouleurs
Keyword(s):  
Line Width ◽  
Velocity Dispersion ◽  
Rotational Velocity ◽  
Systematic Errors ◽  
Fisher Relation

The 21-cm line width is a good indication of the maximum rotational velocity in a galaxy. However, the turbulent motions affect the observed line width and must be corrected. Not taking them into account introduces both accidental and systematic errors.A first example of this effect is the dependence of the slope a of the Tully-Fisher relation:on the level at which the line width ΔVobs. is measured. In their 1977 paper, Tully and Fisher find the following values:A second example is the departure from linearity in the H-band Tully-Fisher relation obtained by Aaronson et al. (1982) (their figure 2): the narrow lines are more strongly affected by these turbulent motions.

On The Radii of Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 49-55 ◽  
Author(s):  
F.A. Catalano ◽  
G. Strazzulla
Keyword(s):  
Observational Data ◽  
Line Width ◽  
Main Sequence ◽  
Main Sequence Stars ◽  
Ap Stars

SummaryFrom the analysis of the observational data of about 100 Ap stars, the radii have been computed under the assumption that Ap are main sequence stars. Radii range from 1.4 to 4.9 solar units. These values are all compatible with the Deutsch's period versus line-width relation.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

SIZE DEPENDENT FMR LINE-SHIFT AND LINE-WIDTH STUDIES IN POLYCRYSTALLINE FERRITES AND GARNETS

1977 ◽  
Vol 38 (C1) ◽  
pp. C1-267-C1-269 ◽  
Author(s):  
C. M. SRIVASTAVA ◽  
M. J. PATNI ◽  
N. G. NANADIKAR
Keyword(s):  
Line Width ◽  
Line Shift ◽  
Size Dependent

Beyond Black Lives Matter

2015 ◽  
Vol 2 (2) ◽  
Author(s):  
Robin D. G. Kelley
Keyword(s):  
The State ◽  
Slippery Slope ◽  
White People ◽  
Dominant Class ◽  
Black Lives Matter

Few activists who march behind the banner of Black Lives Matter conceive of their struggle as an appeal to white people for recognition, but until recently the movement’s objective echoed this implicit line of reasoning: if the dominant class, and/or the state, could just recognize that our lives matter, we would be treated differently. Such assumptions can easily lead us down a slippery slope of reducing five centuries of racism, slavery, and colonialism to a fixed ideology of anti-Blackness intrinsic to the European mind, or worse, mistaking a dynamic racial regime for negligence, ignorance, or “blindness” to our humanity, a humanity that requires a visible struggle to be seen. They can lead, that is to say, to a politics in which recognition takes precedence over revolution and reconstruction.

Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range

2002 ◽  
Vol 722 ◽  
Author(s):  
T. S. Sriram ◽  
B. Strauss ◽  
S. Pappas ◽  
A. Baliga ◽  
A. Jean ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Line Width ◽  
Insertion Loss ◽  
Optical Filter ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Reliability Testing ◽  
Silicon Nitride Membrane ◽  
Tunable Optical Filter ◽  
Extensive Performance

AbstractThis paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt
Keyword(s):  
Line Width ◽  
Metal Film ◽  
Focal Depth ◽  
Cost Effective ◽  
Pattern Generation ◽  
Promising Technique ◽  
Critical Dimensions ◽  
Exposure Method ◽  
Multi Level ◽  
3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

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