Optical Properties of Chemical Vapour Etching Based Porous Silicon for Multicrystalline Solar Cells

2017 ◽  
Vol 23 ◽  
pp. 56-62
Author(s):  
Bedra Mahmoudi ◽  
Ahmed Mouhoub ◽  
Brahim Mahmoudi ◽  
Hamid Menari ◽  
Abdennour Mougas
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Chemical Vapour ◽  
Wavelength Region ◽  
Multicrystalline Silicon ◽  
Short Wavelength Region ◽  
Solar Cell Application ◽  
Hydrogen Incorporation ◽  
Near Ir ◽  
Before And After

In this paper, we report a study on the possibility of fabricating porous silicon by exposing a multicrystalline silicon surface to gaseous etchants. The structural and optical properties of porous silicon (PS) layers prepared by vapour –etching (VE) are investigated. FTIR analysis confirms the existence of hydrogen incorporation bonding to the silicon atoms. Photoluminescence measurements reveal an efficient emission around 640 nm. The optical behaviour in the 350-1000 nm wavelength range was determined before and after PS formation, resulting in a notable reduction of reflectance and an enlargement of low reflectance region into short wavelengths and near IR region after PS formation. A significant increase of the quantum efficiency particularly in the short wavelength region is observed. The results make the use of such thin film very promising for multicrystalline silicon solar cell application.

scholarly journals Люминесцентные свойства нестехиометрических кристаллов ниобата лития различного состава и генезиса (обзор)

2022 ◽  
Vol 130 (1) ◽  
pp. 171
Author(s):  
М.В. Смирнов ◽  
Н.В. Сидоров ◽  
М.Н. Палатников
Keyword(s):  
Wave Spectrum ◽  
Visible Region ◽  
Wavelength Region ◽  
Visible Spectrum ◽  
Luminescent Properties ◽  
Short Wave ◽  
Octahedral Cluster ◽  
Short Wavelength Region ◽  
Luminescence Centers ◽  
Near Ir

A brief review of the features of the defect structure and studies of the luminescent properties of nonlinear optical lithium niobate crystals of various compositions and genesis was given. It was established that the electron-hole pair NbNb4+-O- in the oxygen-octahedral cluster NbO6 emitted in the short-wavelength region of the visible spectrum (400-500 nm), while point defects (VLi and NbNb4+-NbLi4+ bipolarons) - in the long-wavelength region (500-620 nm). At the ratio of Li/Nb≈1 the luminescence was extinguished in the visible region of the spectrum due to decreasing the intrinsic luminescence centers. It was shown that the presence of polaron luminescence in the near-IR region (700-1050 nm) was due to the small polarons NbLi4+ and impurity ions Cr3+ localized in lithium and niobium octahedra. The energy transfer between the luminescence centers in the visible and near-IR spectral regions was detected. Moreover, luminescence in near-IR regions was dominant. Doping of LiNbO3 crystals with zinc and magnesium at ZnO<4.46 mol.% and MgO<5.29 mol.% led to decreasing luminescence of intrinsic defects (VLi, NbNb4+-NbLi4+). However, there was an increase of the contribution of the short-wave spectrum component at higher dopant concentrations because of the introduction of Zn and Mg into the origin positions of Nb ions.

Optical Properties of Microcrystalline Silicon in Oxide Matrix through Partial Oxidation of Anodized Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Osamu Arakaki ◽  
Akio Hiraki
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Partial Oxidation ◽  
Silicon Oxide ◽  
Light Emission ◽  
Wavelength Region ◽  
Microcrystalline Silicon ◽  
Quantum Size ◽  
Visible Luminescence ◽  
Oxide Matrix

ABSTRACTMicrocrystalline silicon embedded in silicon oxide has been prepared by means of partial oxidation of porous silicon produced anodically from degenerate p-Si wafers. Their optical properties such as absorption coefficients and luminescence have been characterized. Results show blue shifts in absorption and photoluminescence spectra in a visible wavelength region with decreasing size of the microcrystalline Si in the Si oxide matrix. The quantum size effect is discussed as well as possible origins of the observed visible luminescence, including light emission from as-anodized (or H-chemisorbed) porous silicon.

scholarly journals Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

2021 ◽  
Vol 55 (4) ◽  
pp. 360
Author(s):  
Д.А. Кудряшов ◽  
А.А. Максимова ◽  
Е.А. Вячеславова ◽  
А.В. Уваров ◽  
И.А. Морозов ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Wavelength Region ◽  
Electrical And Optical Properties ◽  
Short Wavelength Region ◽  
Order Of Magnitude ◽  
Oxygen Addition ◽  
Ito Films

The influence of the relative position of the magnetron and the substrate on the electrical and optical properties of the forming indium tin oxide (ITO) layers is demonstrated. The reasons for this behavior are considered and the role of oxygen in the onset of inhomogeneity of the properties of ITO films is shown. It is shown that, in the growth mode without additional oxygen addition, the resistivity of ITO films differs by an order of magnitude ((2−14)·10^−2 Ohm·cm) for different positions of the substrate on the substrate holder along the radius in the range of 0−14cm. In this case, absorption spectra are observed differences in the shape of the short-wavelength region of the spectrum. The addition of an insignificant (0.1sccm) amount of oxygen to the working chamber during the growth of the oxide leads to a significant increase in the homogeneity of the electrical and optical properties of ITO

Lifetime Measurements of Stain Etched and Passivated Porous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Ricardo Guerrero-Lemus ◽  
Fathi A. Ben-Hander ◽  
Cristoffer Ballif ◽  
Ali Kenanoglu ◽  
Dietmar Borchert ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Vapour Deposition ◽  
Surface Passivation ◽  
Chemical Vapour ◽  
Lifetime Measurements ◽  
Porous Layers ◽  
Si Substrates ◽  
Before And After ◽  
P Type ◽  
Weak Influence

AbstractIn this work we present the first experimental study of photocarrier lifetimes in p-type and n-type Si substrates in which stain etched porous silicon (PS) has been formed on the surface. The lifetime values have been obtained before and after the surface passivation of the samples. The surface pasivation has been produced by two different techniques: (i) hydrogen passivation by immersion of the samples in a HF solution; and (ii) deposition of SiNx in a plasma enhanced chemical vapour deposition system. The results show a degradation of the photocarrier lifetime when the porous layers are not adequately passivated. This lifetime degradation is mainly associated to a large concentration of rapid recombination centres located at the Si/PS interface. We have also detected a weak influence of the PS outermost dangling bonds to the photocarrier lifetimes.

scholarly journals Luminescent Properties of Composite Systems Based on Polystyrene and Erbium(III) Phthalocyaninates in Near IR Spectral Region

2018 ◽  
Vol 1 (3) ◽  
pp. e00029
Author(s):  
I.A. Belogorokhov ◽  
L.I. Belogorokhova ◽  
Yu.V. Ryabchikov ◽  
V.E. Pushkarev
Keyword(s):  
Comparative Analysis ◽  
Composite Materials ◽  
Wavelength Region ◽  
Luminescent Properties ◽  
Short Wavelength Region ◽  
Composite Systems ◽  
Near Ir ◽  
Polystyrene Matrix ◽  
First Time ◽  
Properties Of Composites

Composite materials based on polystyrene and ErIII phthalocyaninates of single-, double- and triple-decker structure were obtained, and their spectral luminescent characteristics in the near-IR (NIR) range were studied. All the ErIII complexes in these composites reveal 4f photoluminescence (PL), which is observed at 1550 nm for mono- and tris(phthalocyaninate), whereas in the case of bis(phthalocyaninate), the PL maximum is shifted to the short-wavelength region and appears at 1440 nm. A comparative analysis of the properties of composites and individual phthalocyanine compounds in films and solutions was carried out. In the case of a single-decker complex, this emission was detected for the first time in the polystyrene matrix, while for individual ErIII mono(phthalocyaninates), this process was not observed earlier.

scholarly journals Влияние малых доз гамма-излучения на оптические свойства пористого кремния

2018 ◽  
Vol 52 (3) ◽  
pp. 349
Author(s):  
Д.И. Биленко ◽  
О.Я. Белобровая ◽  
Д.В. Терин ◽  
В.В. Галушка ◽  
И.В. Галушка ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Short Wavelength ◽  
Wavelength Region ◽  
Low Doses ◽  
Photoluminescence Properties ◽  
Short Wavelength Region ◽  
Emission Efficiency ◽  
Radioisotope Source

AbstractThe possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a ^226Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.

Research on ZnS Buffer Layer by RF Magnetron Sputtering for Cu(In,Ga)Se2 Solar Cells

2011 ◽  
Vol 194-196 ◽  
pp. 2259-2262
Author(s):  
Yin Qun Hua ◽  
Jie Yu ◽  
Rui Fang Chen ◽  
Cheng Chen ◽  
Rui Li Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Buffer Layer ◽  
Uv Spectroscopy ◽  
Visible Region ◽  
Wavelength Region ◽  
Deposition Process ◽  
Short Wavelength Region

Nanocrystalline ZnS thin films are prepared on glass substrates under various deposition conditions (radio frequency power, and sputtering pressure) using radio frequency magnetron sputtering at room temperature. Through optimization of deposition process, very thin and uniform ZnS layer was deposited to minimize the light blocking effect in short wavelength region. This paper investigates the influence of ZnS buffer layer by magnetron sputtering,and analyses structure,surface topography,and optical properties of ZnS films by using X-ray diffraction (XRD), UV-spectroscopy measurements and scanning electronic microscope (SEM) analysis techniques. Findings show that the high-quality ZnS thin films with a good crystallinity and optical properties, which is zinc blende cubic structure with a preferred orientation, can be grown by sputtering at 300W and 0.6Pa. The films exhibit the optical transparency as high as 80% in the visible region, and the resultant ZnS thin films have a high crystallinity, low defect concentration and good optical properties with the band gap of 3.50eV.

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