Effects of Sn Ion on Photocatalytic Performances of Titanium Dioxide Thin Film

2014 ◽  
Vol 707 ◽  
pp. 77-80
Author(s):  
Zhan Jun Gao ◽  
Qing Yang ◽  
Qing Li ◽  
Jin Cui ◽  
Zi Sheng Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Activity ◽  
Photoelectron Spectroscopy ◽  
Light Response ◽  
Pure Tio2 ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Before And After ◽  
Photocatalytic Performances

In order to improve the photocatalytic efficiency of TiO2, through adding different concentration of Sn ion, the photocatalytic performances of TiO2 thin films are changed. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectrum of TiO2 thin films before and after doping Sn ion are compared, and the transmission spectrum and optical absorption spectrum of TiO2 thin film are analyzed. The results show that: after the implantation of Sn ion, there is a new compound Ti1-xSnxO2 on the TiO2 film’s surface, which has a higher photocatalytic activity than pure TiO2. In addition, Sn/TiO2 film has broaden the scope of its light response after ion implantation, so that it can be more effectively in using light source to send out the photons of longer waveband, and makes the photocatalytic activity of Sn/TiO2 thin films increase.

scholarly journals Photocatalytic Activity under Simulated Sunlight of Bi-Modified TiO2 Thin Films Obtained by Sol Gel

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
D. A. Solís-Casados ◽  
L. Escobar-Alarcón ◽  
V. Alvarado-Pérez ◽  
E. Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Anatase Phase ◽  
Sol Gel ◽  
Optical Measurements ◽  
Simulated Sunlight ◽  
Tio2 Thin Films ◽  
X Ray

The synthesis of Bi-modified TiO2 thin films, with different Bi contents, is reported. The obtained materials were characterized by energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (RS), X-ray diffraction (XRD), photoluminescence (PL), and diffuse reflectance spectroscopy (DRS), in order to obtain information on their chemical composition, vibrational features, and optical properties, respectively. Compositional characterization reveals that the bismuth content can be varied in an easy way from 0.5 to 25.4 at. %. Raman results show that the starting material corresponds to the anatase phase of crystalline TiO2, and Bi addition promotes the formation of bismuth titanates, Bi2Ti2O7 at Bi contents of 10.4 at. % and the Bi4Ti3O12 at Bi contents of 21.5 and 25.4 at. %. Optical measurements reveal that the band gap narrows from 3.3 eV to values as low as 2.7 eV. The photocatalytic activity was tested in the degradation reaction of the Malachite Green carbinol base dye (MG) as a model molecule under simulated sunlight, where the most relevant result is that photocatalytic formulations containing bismuth showed higher catalytic activity than pure TiO2. The higher photocatalytic activity of MG degradation of 67% reached by the photocatalytic formulation of 21.5 at. % of bismuth is attributed to the presence of the crystalline phase perovskite-type bismuth titanate, Bi4Ti3O12.

scholarly journals Investigating Visible-Photocatalytic Activity of MoS2/TiO2 Heterostructure Thin Films at Various MoS2 Deposition Times

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Hang Nguyen Thai Phung ◽  
Van Nguyen Khanh Tran ◽  
Lam Thanh Nguyen ◽  
Loan Kieu Thi Phan ◽  
Phuong Ai Duong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Activity ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Photoelectron Spectroscopy ◽  
Light Irradiation ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Visible Photocatalytic Activity

MoS2/TiO2 heterostructure thin films were fabricated by sol-gel and chemical bath deposition methods. Crystal structure, surface morphology, chemical states of all elements, and optical property of the obtained thin films were characterized by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and UV-Vis spectroscopy techniques, respectively. Photocatalytic activity of all thin films was evaluated by measuring decomposition rate of methylene blue solution under visible light irradiation. The results indicate that ultrathin MoS2 film on TiO2-glass substrate improves photocatalytic activity of TiO2 in the visible light due to the efficient absorption of visible photon of MoS2 few layers and the transfer of electrons from MoS2 to TiO2. All MoS2/TiO2 heterostructure thin films exhibit higher visible light photocatalytic activity than that of pure MoS2 and TiO2 counterparts. The best MoS2/TiO2 heterostructure thin film at MoS2 layer deposition time of 45 minutes can decompose about 60% MB solution after 150 minutes under visible light irradiation. The mechanism of the enhancement for visible-photocatalytic activity of MoS2/TiO2 heterostructure thin film was also discussed.

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

scholarly journals Enhanced Photocatalytic Activity of CuWO4 Doped TiO2 Photocatalyst Towards Carbamazepine Removal under UV Irradiation

Separations ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 25
Author(s):  
Chukwuka Bethel Anucha ◽  
Ilknur Altin ◽  
Emin Bacaksız ◽  
Tayfur Kucukomeroglu ◽  
Masho Hilawie Belay ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photocatalytic Activity ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Sol Gel ◽  
Pure Tio2 ◽  
Component Part ◽  
Energy Yield ◽  
Mechanical Agitation ◽  
X Ray

Abatement of contaminants of emerging concerns (CECs) in water sources has been widely studied employing TiO2 based heterogeneous photocatalysis. However, low quantum energy yield among other limitations of titania has led to its modification with other semiconductor materials for improved photocatalytic activity. In this work, a 0.05 wt.% CuWO4 over TiO2 was prepared as a powder composite. Each component part synthesized via the sol-gel method for TiO2, and CuWO4 by co-precipitation assisted hydrothermal method from precursor salts, underwent gentle mechanical agitation. Homogenization of the nanopowder precursors was performed by zirconia ball milling for 2 h. The final material was obtained after annealing at 500 °C for 3.5 h. Structural and morphological characterization of the synthesized material has been achieved employing X-ray diffraction (XRD), Fourier transform infra-red (FTIR) spectroscopy, Brunauer–Emmett–Teller (BET) N2 adsorption–desorption analysis, Scanning electron microscopy-coupled Energy dispersive X-ray spectroscopy (SEM-EDS), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-Vis diffuse reflectance spectroscopy (UV-vis DRS) for optical characterization. The 0.05 wt.% CuWO4-TiO2 catalyst was investigated for its photocatalytic activity over carbamazepine (CBZ), achieving a degradation of almost 100% after 2 h irradiation. A comparison with pure TiO2 prepared under those same conditions was made. The effect of pH, chemical scavengers, H2O2 as well as contaminant ion effects (anions, cations), and humic acid (HA) was investigated, and their related influences on the photocatalyst efficiency towards CBZ degradation highlighted accordingly.

scholarly journals Microstructure Evolution of Ag/TiO2 Thin Film

2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Growth Rate ◽  
Synchrotron Radiation ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Contact Mode ◽  
X Ray ◽  
Radiation Imaging

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

Grain Boundary Diffusion in Co/Cu and Co/Cr Magnetic Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
John G. Holl-Pellerin ◽  
S.G.H. Anderson ◽  
P.S. Ho ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Photoelectron Spectroscopy ◽  
Boundary Diffusion ◽  
Magnetic Thin Films ◽  
Grain Boundary Diffusion ◽  
X Ray ◽  
Before And After

ABSTRACTX-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Cu and Cr through 1000 Å thick Co films in the temperature range of 325°C to 400°C. Grain boundary diffusivities were determined by modeling the accumulation of Cu or Cr on Co surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Cu through Co is characterized by a diffusion coefficient, D0gb, of 2 × 104 cm2/sec and an activation energy, Ea,gb, of 2.4 eV. Similarly, Cr grain boundary diffusion through Co thin films occurs with a diffusion coefficient, Do,gb, of 6 × 10-2cm2/sec and an activation energy, Ea,gb of 1.8 eV. The Co film microstructure has been investigated before and after annealing by x-ray diffraction and transmission electron Microscopy. Extensive grain growth and texturing of the film occurred during annealing for Co deposited on a Cu underlayer. In contrast, the microstructure of Co deposited on a Cr underlayer remained relatively unchanged upon annealing. Magnetometer Measurements have shown that increased in-plane coercivity Hc, reduced remanence squareness S, and reduced coercive squareness S* result from grain boundary diffusion of Cu and Cr into the Co films.

Preparation and Photocatalytic Properties of La, Ce and Nonmetal N Co-Doped TiO2

2016 ◽  
Vol 680 ◽  
pp. 193-197
Author(s):  
San Ti Yi ◽  
Si Qin Zhao
Keyword(s):  
Photocatalytic Activity ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Uv Light ◽  
Sol Gel ◽  
Light Response ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Co Doped

TiO2, 1%La/TiO2, 1%Ce/TiO2 and a series of Laand Ce co-doped TiO2 photocatalysts were prepared by sol-gel method. Using sol-gel method combine with hydrothermal method prepared rare earth La, Ce and nitrogen co-doped TiO2 photocatalysts. The microstructure, spectroscopy performance and ion doped form of prepared samples were characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy techniques and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of doped TiO2 were examined by measuring the photodegradation of methyl orange. The results showed that the products were all anatase TiO2 nano powder, doping Laor Cehinder the growth of TiO2 particle, further more, doping Laand Cetogether hinder the growth of TiO2 particle more effective, doping N broaden the light response range of TiO2 photocatalyst. At the same time, the photocatalytic activity results indicated that the prepared samples showed superior UV light photocatalytic activity, the sample 1% (La:Ce,9:1)-N/TiO2 showed the highest UV-vis photocatalytic activity.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

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