Growth of GaN Film on Graphene by HVPE

2014 ◽  
Vol 1061-1062 ◽  
pp. 175-179 ◽  
Author(s):  
Shun Yu He ◽  
Bing Cao ◽  
Qiang Yu ◽  
Lin Qi ◽  
Chin Hua Wang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Monolayer Graphene ◽  
X Ray Diffraction ◽  
Graphene Layers ◽  
Metal Organic ◽  
Organic Vapor Phase Deposition

A method to grow gallium nitride (GaN) films directly on the graphene layers by hydride vapor phase epitaxy (HVPE) method is reported in this work. We used a chemical vapor deposition (CVD) method to grow graphene on a copper foil, and the test results showed the presence of monolayer graphene at most regions. GaN films were grown on the graphene/MO-GaN substrate (GaN which was grown by metal organic vapor phase deposition) and MO-GaN template by HVPE method. Raman Spectroscopy, Scanning Electron Microscopy (SEM), and X-Ray Diffraction (XRD) were adopted for characterization. By comparing with the MO-GaN substrate, the crystalline quality of the GaN films were both increased. However, the crystalline quality of the HVPE-GaN with graphene interlayer is slightly lower than that directly grown on MO-GaN.

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

2011 ◽  
Vol 413 ◽  
pp. 11-17 ◽  
Author(s):  
Bin Feng Ding ◽  
Yong Quan Chai
Keyword(s):  
Chemical Vapor ◽  
Crystal Quality ◽  
Tetragonal Distortion ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A GaN epilayer with tri-layer AlGaN interlayer grown on Si (111) by metal-organic chemical vapor deposition (MOCVD) method was discussed by synchrotron radiation x-ray diffraction (SRXRD) and Rutherford backscattering (RBS)/C. The crystal quality of the epilayer is very good with a χmin=2.1%. According to the results of the θ-2θ scan of GaN(0002) and GaN(1122), the epilayer elastic strains in perpendicular and parallel directions were calculated respectively to be-0.019% and 0.063%. By the angular scan using RBS/C around a symmetric [0001] axis and an asymmetric [1213] axis in the (1010) plane of the GaN layer, the tetragonal distortion (eT ) were determined to be 0.09%. This result coincides with that from SRXRD perfectly. The strain decreases gradually towards the near-surface layer, which will avoid the film cracks efficiently and improve the crystal quality of the GaN epilayer remarkably.

The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4919-4921
Author(s):  
Anatolij Govorkov ◽  
Alexsandr Donskov ◽  
Lev Diakonov ◽  
Yulia Kozlova ◽  
Sergej Malahov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Substrate Orientation

scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
High Quality ◽  
Continuous Growth

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

Enhanced Optical Emission from GaN Film Grown on Composite Intermediate Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
Xiong Zhang ◽  
Soo-Jin Chua ◽  
Peng Li ◽  
Kok-Boon Chong
Keyword(s):  
Silicon Layer ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Intermediate Layers ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Gan Film

ABSTRACTGaN films have been grown on silicon-(001) substrate with specially designed composite intermediate layers consisting of an ultra-thin amorphous silicon layer and a GaN/AlxGa1−xN (x=0.2) multilayered buffer by metal-organic chemical vapor deposition and characterized by photoluminescence and x-ray diffraction spectroscopy. It was found that the GaN films grown on the composite intermediate layers gave comparable or slightly stronger optical emission than those grown on sapphire substrate under identical reactor configuration. Moreover, the full width at half maximum for the GaN band-edge-related emission is 40 meV at room temperature. This fact indicates that, by using the proposed composite intermediate layers, the crystalline quality of GaN-based nitride grown on a silicon substrate can be significantly improved.

X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions

2009 ◽  
Vol 1202 ◽  
Author(s):  
Mohammad Ahmad Ebdah ◽  
Martin E. Kordesch ◽  
Andre Anders ◽  
Wojciech M. Jadwisienczak
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Gradual Improvement ◽  
X Ray ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Ion Implanted

AbstractIn this work, europium implanted InGaN/GaN SL with a fixed well/barrier thickness ratio grown by metal-organic chemical-vapor deposition (MOCVD) on GaN/(0001) sapphire substrate were investigated. The as-grown and Eu ion implanted InGaN/GaN SLs were annealed at different temperatures ranging from 600°C to 950°C in nitrogen ambient. The quality of the SL interfaces in undoped and implanted structures has been investigated by X-ray diffraction (XRD) at room temperature. The characteristic satellite peaks of SLs were measured for the (0002) reflection up to the second order in the symmetric Bragg geometry. The XRD simulation spectrum of the as-grown SL agrees well with the experimental results. The simulation results show x=0.06 atomic percent the InGaN well sub-layers, with thicknesses of 2.4 and 3.3 nm for single InGaN well and GaN barrier, respectively. It was observed that annealing of the undoped SL does not significantly affect the interfacial quality of the superstructure, whereas, the Eu ion implanted InGaN/GaN SL undergo partial induced degradation. Annealing the implanted SLs shows a gradual improvement of the multilayer periodicity and a reduction of the induced degradation with increasing the annealing temperature as indicated by the XRD spectra.

scholarly journals Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

2019 ◽  
Vol 45 (11) ◽  
pp. 3
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer ◽  
Semipolar Gan ◽  
Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Synthesis, Structure and Luminescence of High Brightness Gallium Nitride Powder

2003 ◽  
Vol 798 ◽  
Author(s):  
R. Garcia ◽  
A. Thomas ◽  
A. Bell ◽  
M. Stevens ◽  
F. A. Ponce
Keyword(s):  
High Purity ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Ultra High Purity ◽  
Gallium Metal ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTHighly luminescent GaN powders have been synthesized by reacting high purity gallium metal with ultra-high purity ammonia in a horizontal quartz reactor at 1100 °C. The powders produced in this reactor consist of light grey micro-crystals with wurtzite structure. Elemental analysis indicates that the powders obtained by this method have a high nitrogen concentration (more than stoichiometric GaN, 16.73 weight %). Powder X-ray diffraction demonstrates that the material has a high purity and single crystalline structure. Electron microscopy shows that the powders consist of at least two kinds of particles, small sized platelets and large sized needles. The resulting GaN powders are thousands of times more cathode- and photo-luminescent than other GaN powders including commercially available material. Their luminescence intensities are comparable to that of GaN thin films grown by hydride vapor phase epitaxy and metal organic chemical vapor deposition.

Growth of High Quality c-plane AlN on a-plane Sapphire

2009 ◽  
Vol 1202 ◽  
Author(s):  
Reina Miyagawa ◽  
Jiejun Wu ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Dislocations Density ◽  
Reactor Pressure

Abstractc-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were adjusted from 1430-1500 °C and the reactor pressure was kept constant at 30 Torr. Mirror and flat c-plane AlN were obtained grown on both a-plane and c-plane sapphire. Crystalline quality and surface roughness are improved with increasing growth temperature, detected by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). The Full widths at half maximum (FWHM) values of (10-12) diffraction are 519 and 1219 arcsec for c-plane AlN grown on a-plane sapphire and c-plane sapphire, respectively. It indicates that a-plane sapphire substrate benefits to decrease dislocations density.

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