Synthesis of Silicon Carbide in Hypervelocity Plasma Jet

2015 ◽  
Vol 1085 ◽  
pp. 38-43
Author(s):  
Dmitry S. Nikitin ◽  
Alexander A. Sivkov ◽  
Alexander Ya. Pak ◽  
Ilyas A. Rakhmatullin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Plasma Jet ◽  
Synthesis Product ◽  
Composition Change ◽  
X Ray ◽  
Carbon Onion ◽  
Transmission Electron ◽  
Cubic Silicon Carbide

Results of plasmodynamic synthesis of silicon carbide nanopowders are given in the article. Studies of the synthesis product by X-ray diffractometry and transmission electron microscopy indicated that the product consists mainly of cubic silicon carbide and also includes cubic silicon, ultradispersed graphite and carbon onion-like structures. It was shown that a phase composition change in the synthesis product is possible by changing the ratio of precursor mixture.

Dependence of the Product's Phase Composition on the Ratio of Precursors in Plasmadynamic Synthesis of Silicon Carbide

2018 ◽  
Vol 769 ◽  
pp. 114-119 ◽  
Author(s):  
Artur A. Sivkov ◽  
Artur Nassyrbayev ◽  
Maksim Gukov
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
Central Electrode ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Accelerator Channel ◽  
Coaxial Magnetoplasma Accelerator

In this work, the powder of nanoscale cubic SiC was obtained by the plasmodynamic synthesis in a coaxial magnetoplasma accelerator (CMPA) with a graphite central electrode and an accelerator channel. The synthesis method allows obtaining a product with a high content of nanoscale cubic silicon carbide. The work is aimed to study the influence of the precursor’s ratio on the product. The synthesized products were analyzed by X-ray diffraction and transmission electron microscopy.

Synthesis of Silicon Carbide Nanoparticles from Carbon Nanotubes

2012 ◽  
Vol 602-604 ◽  
pp. 183-186 ◽  
Author(s):  
Jing Liu ◽  
Rong Wu ◽  
Jin Li ◽  
Yan Fei Sun ◽  
Ji Kang Jian
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Scanning Electron Microscopy ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Sic Nanoparticles ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Scanning Electron

In this paper, we report the synthesis of cubic silicon carbide (3C-SiC) nanoparticles by direction reaction of silicon powders and carbon nanotubes. The as-prepared SiC nanoparticles were characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and Raman scattering at room temperature. The possible growth mechanism is proposed.

scholarly journals Влияние термообработки на свойства композитных кремний-углеродных анодов для литий-ионных аккумуляторов

2020 ◽  
Vol 46 (3) ◽  
pp. 14
Author(s):  
Е.В. Астрова ◽  
А.В. Парфеньева ◽  
А.М. Румянцев ◽  
В.П. Улин ◽  
М.В. Байдакова ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Lithium Alloys

The effect of annealing temperature in argon atmosphere on the ability of Si-C nanocomposites to reversibly insert lithium was investigated. It was found that the higher the annealing temperature during the formation of the composite, the lower is the capacitance of the electrode made from it. X-ray diffraction analysis and transmission electron microscopy reveal that the reason of the capacitance decrease is formation at T  1100°C of silicon carbide of cubic modification -SiC, inactive with respect to the formation of lithium alloys or intercalates.

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

2010 ◽  
Vol 645-648 ◽  
pp. 379-382
Author(s):  
Bralee Chayasombat ◽  
Y. Kimata ◽  
T. Kato ◽  
Tomoharu Tokunaga ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Microstructural Characterization ◽  
Transmission Electron ◽  
Before And After ◽  
Bulge Region ◽  
Cubic Silicon Carbide

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

Micropipe-induced birefringence in 6H silicon carbide

2009 ◽  
Vol 43 (1) ◽  
pp. 122-133 ◽  
Author(s):  
T. Ouisse ◽  
D. Chaussende ◽  
L. Auvray
Keyword(s):  
Electron Microscopy ◽  
Residual Stress ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Burgers Vector ◽  
X Ray ◽  
Induced Stress ◽  
Transmission Electron ◽  
Theory And Experiment ◽  
Good Agreement

The micropipe-induced birefringence of 6H silicon carbide (SiC) is measured and quantitatively modelled. A good agreement can be obtained between theory and experiment, provided that background residual stress is added to the local dislocation-induced stress. Observations are compatible with or predictable from the Burgers vector values, and birefringence is shown to be an interesting tool for probing the nature of the dislocations associated withe.g.micropipes; it is also faster than and complementary to the more involved techniques of transmission electron microscopy or X-ray topography.

Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy

1995 ◽  
Vol 39 ◽  
pp. 645-651
Author(s):  
J. Chaudhuri ◽  
R. Thokala ◽  
J. H. Edgar ◽  
B. S. Sywe
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Residual Stress ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Defect Density ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron

Epitaxial AIN thin films grown on sapphire, silicon and silicon carbide substrates were studied using x-ray double crystal diffractometry and transmission electron microscopy to compare the structure, residual stress and defect concentration in these thin films. The AIN thin films was found to have a wurtzite type of structure with a small distortion in lattice parameters which results in a small residual stress of the order of 109 dynes/cm2 in the film. The strain due to lattice parameter mismatch between the substrate and film is too small to account for the residual stress present. The calculated stress from the difference in thermal expansion coefficients between the film and substrate agrees well with the experimental values. Both the x-ray and transmission electron microscopy measurements indicate a low defect density in the AIN thin film grown on 6H-SiC substrate which could be attributed to the small difference in lattice parameters between AIN and 6H-SiC. The defect density in the AIN thin film grown on other substrates were considerably higher. This is the first report of the successful growth of single crystal AIN thin films with such a low concentration of defect density.

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Structural Characterization ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

scholarly journals Study of particles of plasma dynamic synthesis product in the Ti-O system by high-resolution transmission electron microscopy

2021 ◽  
Vol 2064 (1) ◽  
pp. 012091
Author(s):  
A A Sivkov ◽  
Y N Vympina ◽  
I A Rakhmatullin ◽  
A S Ivashutenko ◽  
Y L Shanenkova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Degree Of Crystallinity ◽  
Synthesis Product ◽  
Plasma Dynamic ◽  
X Ray ◽  
Dynamic Synthesis ◽  
Transmission Electron ◽  
The Degree Of Crystallinity

Abstract The paper demonstrates the possibility of obtaining a dispersed product in the Ti-O system by the method of plasma dynamic synthesis. It was revealed that the product consists of two modifications of TiO2: anatase and rutile. The degree of crystallinity is at a level of ~ 98.0%, which indicates the practical absence of an amorphous component. The predominant phase is anatase, which is confirmed by the results of quantitative X-ray phase analysis and high-resolution transmission electron microscopy.

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