Study on the Preparation and Corrosion Resistance of Nano-Structured SiO2 Thin Film on Carbon Steel

2011 ◽  
Vol 183-185 ◽  
pp. 1722-1725 ◽  
Author(s):  
Jing Lin ◽  
Tie Feng Zhang ◽  
Gui Wen Yu
Keyword(s):  
Thin Film ◽  
Corrosion Resistance ◽  
Carbon Steel ◽  
Magnetron Sputtering ◽  
Photoelectron Spectrum ◽  
Sea Water ◽  
Rf Magnetron Sputtering ◽  
Corrosion Resistant ◽  
X Ray ◽  
Atomic Force

Used RF magnetron sputtering method to prepare SiO2thin film on the carbon steel (Q235A) substrate, Films were characterized with the atomic force microscope (AFM) and the X-ray photoelectron spectrum (XPS). Corrosion resistance was compared of SiO2/ Q235A and Q235A. The results showed that: nano-structured thin film was smooth and dense, The thin film was constituted by compact particles of SiO2, and there was no Fe in the films. Electrochemical experiments indicated that SiO2/ Q235A had better corrosion resistant than Q235A in the sea water.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

scholarly journals Investigation of Optical, Structural and Electrical Properties of Heterostructure Fe2O3 Deposited by RF Magnetron Sputtering on ZnO Layer by Spray Pyrolysis

2021 ◽  
Author(s):  
Sevda Sarıtaş ◽  
Tuba Çakıcı ◽  
Günay Merhan Muğlu ◽  
Muhammet Yıldırım
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Spray Pyrolysis ◽  
Spherical Shape ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Sem Images ◽  
X Ray ◽  
Hall Measurements ◽  
Structural And Electrical Properties

Abstract In this study, we, firstly, fabricated Fe 2 O 3 thin film recently promising to be used in spintronic technology by magnetron sputtering technique on ZnO thin film prepared by spray pyrolysis at 450 o C. The crystal structure, surface morphology and structure, chemical composition, optical and electronic properties, and electric properties of the Fe 2 O 3 /ZnO sample were performed by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM), energy-dispersive X-ray (EDX), ultraviolet-visible (UV-VIS) and Raman spectrometer, and Hall measurements, respectively. XRD measurements showed that Fe 2 O 3 and ZnO thin films have monoclinic and hexagonal crystal structures, respectively, and also both of them are polycrystalline. SEM images proved that there is a very good with the stoichiometric formation of ZnO nanocrystals of spherical shape and demonstrate aggregation of the particles and AFM images displays the distribution of flake-like of Fe 2 O 3 structure over the surface of ZnO. UV-VIS and Raman measurements revealed that the ZnO and Fe 2 O 3 /ZnO heterostructure band's band gap energy are 3.277 and 3.24 eV, respectively. Finally, the calculated values of electric conductivity, σ, electron density, n, and mobility of the electron, μ, using the data obtained from Hall measurements are 4.39x10 2 Ω -1 .m -1 , 6.88x10 21 m -3 and 3.99x10 -1 V -1 .m 2 . s, respectively.

scholarly journals The Effect of Oxygen Mixing Percentage on Structural, Optical and Electrical Properties of ZnTiO3 Thin-films Grown by Rf Magnetron Sputtering.

2021 ◽  
Author(s):  
srinivasa varaprsad H ◽  
sridevi P. V ◽  
Satya Anuradha M ◽  
Srinivas Pattipaka ◽  
pamu D
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Thermionic Emission ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Atomic Force ◽  
Excitation Coefficient ◽  
Effect Of Oxygen

Abstract Perovskites are important composites in the area of multidisciplinary applications. It is achieved by carefully choosing and tuning the properties of the thin-film at the deposition. In this paper, ZnTiO3 (ZTO) thin-films were being deposited on quartz and N-Si substrates by RF magnetron sputtering. The thin-films were developed at room temperature, oxygen percentage levels varying from 0 to 100, and annealed at 600oC. The electrical, optical, morphological, and structural properties were analyzed as a function of oxygen mixing percentage (OMP). The crystallinity of the cubic structured ZTO thin-film is found to be high at 25 OMP, and it is gradually decreased with increased OMP. The surface morphology of the thin-film is observed, and roughness is measured from the atomic force microscope. Raman Spectroscopy investigated the phase formation and the vibrational modes of the thin-film with their spectral de-convolution. The ZTO thin-films optical properties were investigated using transmittance spectra. The ZTO thin-film indicated the highest refractive index of 2.46, at 633nm with optical bandgap values of 3.57 eV, with a thickness of 145nm and 25 OMP. The refractive index, thin-film thickness, and excitation coefficient were analyzed using the Swanepoel envelope technique. Electrical characteristics of ZTO thin-film are measured from the optimized conditions of the thin-film with conventional thermionic emission (TE) technique.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

C− Outgrowths in C+ Thin Films of LiNbO3 on Al2O3-c

1994 ◽  
Vol 341 ◽  
Author(s):  
J. J. Kingston ◽  
D. K. Fork ◽  
F. Leplingard ◽  
F. A. Ponce
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Optical Losses ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preferential Nucleation ◽  
Thin Film Waveguides

AbstractThin-film waveguides of LiNbO3 have been grown on Al2O3-c by off-axis rf magnetron sputtering. The films have been characterized optically by prism coupling measurements, crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. We find that optical losses can be dominated by scattering from large outgrowths that litter the surface of the film. These outgrowths are c− grains imbedded in a c+ matrix. Although some grains nucleate c−, others have their polarity reversed from c+ to c− after nucleation. A model will be presented to explain the preferential nucleation of c+ grains on Al2O3-c. The c− grains grow much faster than the c+ ones because of attractive coulombic forces between the c− grains and the ionized Li and Nb species in the sputter plume.

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method

2013 ◽  
Vol 771 ◽  
pp. 67-70
Author(s):  
Jun Dai ◽  
Yi Jie Fan ◽  
Qiang Sun
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
X Ray ◽  
Indium Gallium

Transparent indium gallium zinc oxide (IGZO) thin film was fabricated on SiO2/Si substrate by radio-frequency magnetron sputtering method. The IGZO thin film was characterized by X-ray diffraction, UV-VIS spectrometer, X-ray photoelectron energy spectrum to determine its optical, structural properties and binding energy information. The IGZO thin film was employed to construct metal-oxide-semiconductor field effect transistors (MOS-FET), which showed an on/off current of about 103. When the device was illuminated by UV light, the drain-to-source current was increased by 15 folders at -5 V gate voltages. The result indicates that the IGZO MOS-FET is sensitive to UV light.

Observation of Cu2ZnSnS4 thin film prepared by RF magnetron sputtering for heterojunction applications

2014 ◽  
Vol 28 (16) ◽  
pp. 1450134 ◽  
Author(s):  
Bo He ◽  
Jing Xu ◽  
Hong Zhi Wang ◽  
Yao Gang Li ◽  
Huai Zhong Xing ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Tin Sulfide ◽  
Copper Zinc Tin Sulfide ◽  
X Ray ◽  
Copper Zinc ◽  
Cu2znsns4 Thin Film

In this paper, copper-zinc-tin-sulfide ( Cu 2 ZnSnS 4) thin film was successfully fabricated by radio-frequency (RF) magnetron sputtering on glass substrate. The structural, optical and electrical properties of the film were studied by X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectrometer, field emission scanning electron microscope (FESEM), UV-VIS spectrophotometer and Hall effect measurement, respectively. The results show that Cu 2 ZnSnS 4 film is of good quality. A good nonlinear rectifying behavior is obtained for the GZO / Cu 2 ZnSnS 4 heterojunction. Under reverse bias, high photocurrent is obtained.

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