Effects of Argon-Oxygen Ratio and Sputtering Power on Optical Properties of ZnO:Al Thin Films Fabricated by RF Magnetron Sputtering

2011 ◽  
Vol 216 ◽  
pp. 307-311 ◽  
Author(s):  
Shu Jie ◽  
Li Yang ◽  
Dong Hua Fan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Pressure ◽  
Pressure Ratio ◽  
Rf Sputtering ◽  
Visible Spectrum ◽  
Rf Magnetron Sputtering ◽  
Electrical Performance ◽  
Process Conditions ◽  
Sputtering Power

Al-doped ZnO (ZAO) thin film with good performance was prepared by radio frequency (RF) magnetron sputtering technology under optimized process conditions. The crystallized characteristic and microstructure of the prepared samples were investigated by X-ray diffraction (XRD) pattern and atomic force microscopy (AFM). The optical transmittance spectra was employed to investigate the dependence of the optical performance of the ZAO film on the process conditions, such as argon-oxygen pressure ratios and sputtering powers, which revealed that the transmittance in the visible spectrum is first increased and then decreased as the argon/oxygen pressure ratios increased from 7/1 to 10/1. When the argon/oxygen pressure ratio is 9/1, the transmittance adds up to the maximum. In addition, as the RF sputtering power increases from 80W to 120W, the transmittance of the films is slightly declined with an average transmittance of above 80%; and with the increase of the sputtering power to 140W and 160W, the maximum transmittance of the film obviously decreases below 75%. Moreover, the electrical properties of ZAO thin films were measured by the four-probe tester. The resistivity of the film is less than 10-3 Ω • cm, demonstrating that it have a good electrical performance.

Effects of RF magnetron sputtering power density on NTC characteristics of Mn–Co–Ni thin films

2012 ◽  
Vol 24 (4) ◽  
pp. 1203-1207 ◽  
Author(s):  
Guanhuan Lei ◽  
Hongwei Chen ◽  
Shanxue Zheng ◽  
Feizhi Lou ◽  
Linling Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Power Density ◽  
Rf Magnetron Sputtering ◽  
Sputtering Power

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Preparation and Character Measurements of AlN Films for RF Magnetron Sputtering

2013 ◽  
Vol 663 ◽  
pp. 409-412
Author(s):  
Tai Long Gui ◽  
Si Da Jiang ◽  
Chun Cheng Ban ◽  
Jia Qing Liu
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Total Pressure ◽  
Rf Magnetron Sputtering ◽  
Elliptical Polarization ◽  
Dielectric Thin Films ◽  
Temperature Changes ◽  
Sputtering Power

AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly bombardment AlN target under different sputtering-power and total pressure. The crystal structure,composition,surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 230 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. The crystal structure of the as-deposited thin-films is amorphous，then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C．

Effect of RF Sputtering Power on the Structural, Optical and Hydrophobic Properties of SiNx Thin Film

2011 ◽  
Vol 194-196 ◽  
pp. 2340-2346 ◽  
Author(s):  
Hong Yu Liang ◽  
Qing Nan Zhao ◽  
Feng Gao ◽  
Wen Hui Yuan ◽  
Yu Hong Dong
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Hydrophobic Properties ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Sputtering Power

With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power.

Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets

2007 ◽  
Vol 544-545 ◽  
pp. 495-498 ◽  
Author(s):  
Akira Watazu ◽  
Katsuhiko Kimoto ◽  
Sonoda Tsutomu ◽  
Kinya Tanaka ◽  
Tomoji Sawada ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Titanium Implants ◽  
Rf Power ◽  
Dc Magnetron Sputtering ◽  
Dc Power ◽  
Sputtering Power ◽  
Titanium Target ◽  
Sputtering System

Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.

The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

2005 ◽  
Vol 902 ◽  
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
Yanrong Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Sputtering ◽  
Piezoresponse Force Microscopy ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Coefficient ◽  
Pure Perovskite Structure ◽  
Force Microscopy ◽  
Xrd Patterns

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING

2018 ◽  
Vol 25 (02) ◽  
pp. 1850051 ◽  
Author(s):  
WENHAO LI
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cuprous Oxide ◽  
Gas Flow ◽  
Copper Ion ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Power ◽  
Specific Scheme ◽  
Temperature Exchange

Cuprous oxide (Cu2O) thin films were produced from metallic Cu targets on [Formula: see text]-Al2O3 (000[Formula: see text]) substrate by radio frequency magnetron sputtering technology. Three batches of samples were deposited under various sputtering parameters by modulating substrate temperature, gas flow and sputtering power, respectively. The samples were characterized by X-ray diffraction and field-emission scanning electron microscopy. Through the experiment, the influences of the sputtering conditions were systematically investigated. It could be inferred that the crystallization extent and the crystal orientation in Cu2O thin films mainly depend on the temperature exchange, which contribute to the variation of the film morphology. Moreover, the gas flow has an effect on the valence of the copper ion in the film and the sputtering power mainly affects the growth rate of the films. This research promotes a more specific scheme to deposit proper Cu2O thin films with proper morphology and useful properties.

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