AlN Actuator for Tunable RFMEMS Capacitor

2011 ◽  
Vol 254 ◽  
pp. 29-33 ◽  
Author(s):  
Sanchitha Fernando ◽  
Tang Min ◽  
Lynn Khine ◽  
Rahul Agarwal ◽  
Kia Hian Lau ◽  
...  

This paper presents a novel piezoelectric actuator design that achieves low curling due to residual film stress. The proposed actuator maintains the gap between the movable electrode and the fixed electrode nearly constant independent of the residual stress level, improving the reproducibility and reliability of piezoelectric devices. At 20V excitation, the actuator deflects more than 5 µm. The design also achieves a capacitor electrode around 6% of the total actuator area, which is 2.5 times greater than other reported designs. This paper demonstrates the novel actuator in a tunable capacitor, but the actuator may be used in many other applications, such as MEMS switches and micro-mirrors.

1993 ◽  
Vol 321 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

AbstractIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001920-001935 ◽  
Author(s):  
Colin Stevens ◽  
Robert Dean ◽  
Chris Wilson

MEMS resonators have many applications, including micromachined gyroscopes, resonating pressure sensors and RF devices. Typically, MEMS resonators consist of a proof mass and suspension system that allows the proof mass motion in one or two directions. Micromachined actuators provide kinetic energy to the proof mass, usually at its resonant frequency. In the simplest resonators, the actuators are driven with an AC signal at or near the resonant frequency. In more complex resonators, the actuator-proof mass system is placed in an amplifier feedback circuit so that the electromechanical system self-resonates. MEMS parallel plate actuators (PPAs) are simple to realize, yet complex nonlinear variable capacitors. If a DC voltage is applied in attempt to move the proof mass greater than 1/3 of the electrode rest gap distance, the device becomes unstable and the electrodes snap into contact. A current limiting resistor is often placed in series with the PPA to limit short circuit current due to a snap-in event. Consider the effect of placing a large resistor, on the order on 10 meg-Ohms, in series with the PPA. Then apply a DC voltage across the resistor-PPA pair of sufficient voltage to cause snap-in. Once the electrostatic force (ES) exceeds the spring force (SF), the electrodes will accelerate toward each other. The capacitance between the electrodes swells as the separation distance shrinks. Since the large resistor limits the charging rate of the capacitor, the voltage across it drops. Once the SF exceeds the EF, the momentum of the movable electrode brings it into contact with the fixed electrode, discharging the capacitor. The movable electrode then accelerates away from the fixed electrode while the resistor slowly allows recharging. After recharging, the cycle repeats resulting in stable oscillation. This resonator requires only a DC power supply, a resistor and a MEMS PPA.


Author(s):  
Jonathan I Miller ◽  
David Cebon

Heavy vehicles have sluggish pneumatic brake actuators that limit the control bandwidth of their anti-lock braking systems. In order to implement more effective braking controllers, it is proposed that high-bandwidth, binary-actuated valves are directly placed on the brake chambers. This article details investigations made into modelling and controlling heavy-vehicle pneumatic brake actuators with a view towards implementing the novel brake actuator design. One-dimensional flow theory is combined with simple thermodynamic arguments for polytropic systems to describe the charging and discharging of a brake chamber. Particular attention is paid to the simulation of perceptible vibrations caused by the piston’s motion at relatively low charging pressures, using a hysteresis model. The resulting equations are linearized and used to design a closed-loop pressure controller for the actuator. Finally, the non-linear performance limits of the valves, caused by dead-zones and time delays, are investigated using a describing function analysis.


1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

ABSTRACTIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


1991 ◽  
Vol 239 ◽  
Author(s):  
István Bársony ◽  
Jos G.E. Klappe ◽  
Tom W. Ryan

ABSTRACTThe properties of polycrystalline silicon layers deposited by RTCVD have been studied by texture, stress and electrical analyse. The intrinsic layers intended for applications in integrated IC processing are very much textured with the preferred orientation depending on deposition temperature and atmosphere. Very low residual film stress in the order of 10 dyn/cm2 was detected, and a transition from compressive to tensile stress with increasing deposition temperature around 800°C was observed. This was associated with the development of the columnar structure by the (110) orientation becoming dominant at the expense of the (100) texture. Also the effect of post-deposition anneal ambience on the grain structure has been studied. Grain size and grain-boundary trapping in after doped layers have been evaluated in P-implanted RTA activated layers.


2012 ◽  
Vol 468-471 ◽  
pp. 895-898
Author(s):  
Tao Huang ◽  
Zhuo Qing Yang ◽  
Gui Fu Ding ◽  
Xiao Lin Zhao

This paper describes the designing and producing of a multi-direction tiny force switch, which is based on the technology of micro-surface processing on privative silicon. The switch is mainly formed by shore, overhanging spring, movable electrode and fixed electrode. Its’ structure material is Ni. The parameters of switch are confirmed by doing finite-element analysis with ANSYS. And rigidities of structure both on horizontal direction and vertical direction are analyzed by using ANSYS to ensure that the uniformity of switch rigidity is qualified. After producing the switch, the rigidity of switch is tested by using bonding tester. The test result shows that the rigidity is almost qualified with requirements.


1992 ◽  
Vol 276 ◽  
Author(s):  
A. Bruno Frazier ◽  
M. R. Khan ◽  
Mark G. Allen

ABSTRACTThe piezoresistive effect of materials is used as the basis for many types of microsensors. Polyimide, a material widely used in microelectronic fabrication, may be made to exhibit this effect by addition of small graphite particles to form a composite material. Polyimide / graphite based piezoresistive films have the advantage of being spin-castable, plasma-processable, highly chemically resistant, and thermally stable up to 400 °C in nitrogen atmospheres. In this work, piezoresistive polyimide films are formed by addition of various amounts (loadings) of graphite particles one micron in diameter or less to DuPont PI-2555 polyimide. Thin films of these materials are spin-cast on silicon wafers, and an in-situ load-deflection measurement technique is used to evaluate the following film properties: piezoresistive coefficient as a function of both strain and graphite loading; Young's modulus as a function of graphite loading; and residual film stress as a function of graphite loading. The observed piezoresistive coefficient is a strong function of graphite loading, with good piezoresistive properties exhibited in the loading range of 15–25 wt% graphite.


Author(s):  
Harris J. Hall ◽  
Bradley D. Davidson ◽  
Steven M. George ◽  
Victor M. Bright

CMOS transistor based digital logic technology has delivered spectacular levels of device integration and processing capability since its advent. However, traditional CMOS device performance remains limited in harsh environments, such as high temperature or irradiated environments. Electrostatically actuated MEMS/NEMS switches offer improved performance in these environments. In this work, out-of-plane three terminal microswitches suitable for digital logic are presented. Each switch consists of a suspended fixed-fixed bowtie shaped electroplated nickel beam (300μm × 250μm × ∼2μm) buckled out-of-plane over a 10μm wide gold electrode on a LPCVD nitride coated low resistance Si substrate, which acts as a common gate electrode. Atomic layer deposited (ALD) alumina (100nm thick) is incorporated as a sacrificial layer to keep the fabrication processing low temperature and provide precise gap uniformity across chip. Steady-state I-V performance results are presented showing contact voltages between 17–36V. Mechanical modeling of the beam deformation is performed using commercial FEA software and compared to the actual measured beam response. These devices offer a valid approach for simple MEMS based logic circuitry with proper film stress management and geometry scaling.


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