Ferroelectricity of PZT-Based Thin Films Doped with Mn and Nb

2012 ◽  
Vol 463-464 ◽  
pp. 472-476
Author(s):  
Tao Zhang ◽  
Hong Wei Ma ◽  
Jie Liu ◽  
Peng Li Zhang ◽  
Ping Liu
Keyword(s):  
Thin Films ◽  
Ternary Compound ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
Mole Percent ◽  
Saturation Polarization ◽  
Pzt Films ◽  
Coercive Electric Field ◽  
Quench Method ◽  
Sputtering System

The ternary compound thin films doped with Mn and Nb, Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3(PMnN-PZ-PT), with the same ratio of PZ/PT=52:48(PZT(52/48)) are fabricated on the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti/SiO2/Si(100) by the radio frequency (RF) magnetron sputtering system, in which the quench method is used for the post heat treatments. The ternary compound films exhibit polycrystal phase combined with (001), (101) and (111) orientations with the 6% mole percent mixing ratio of PMnN, in which the (111) directions are the main orientations for non-mixed PZT(52/48) films and 6% mole percent PMnN mixing PZT(52/48) films(6%PMnN-94%PZT(52/48)), and so both of them are epitaxially grown on Silicon substrates with the (111) orientation. The ferroelectricities of the films are studied by the Sawyer Tower circuit, and the results show that the mixing of PMnN seriously improves the ferroelectricities of PZT(52/48), in which the 6% mixed PZT films own the rest polarization intensity , the saturation polarization intensity and the coercive electric-field intensity =139 kV/cm which are distinctly larger than the non-mixed PZT(52/48) films

Research on PMnN-PZT Ferroelectric Thin Films on Silicon Substrates

2012 ◽  
Vol 157-158 ◽  
pp. 241-244
Author(s):  
Tao Zhang ◽  
Hong Wei Ma ◽  
Min Li ◽  
Bai Hong Li ◽  
Ping Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ternary Compound ◽  
Ferroelectric Thin Films ◽  
Silicon Substrates ◽  
Lattice Structures ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Ferroelectric Thin Films ◽  
Quench Method

The PZT-based ferroelectric thin films own excellent properties, such as good ferroelectricity and excellent piezoelectricity, and the ternary compound PZT-based thin films especially own more excellent properties, which are available to be widely applied in the fabrications of electromechanical devices. However, how to deposit multi-composition PZT-based thin films is a difficult technology. In this paper, the Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3((PMnN-PZT)) ternary compound thin films are studied on, The thin films are deposited on Si substrates by the magnetron sputtering method, in which the same ratio of PZ/PT=52:48(PZT(52/48)) and the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti /SiO2/Si(100) are adopted, and the quench method is always used after the depositions for the post heat treatments. The lattice structures, the surface and the ferroelectricity of thin films are characterized. The results show that the doping of PMnN with 6% mol percent is proper to obtain excellent PMnN-PZT ferroelectric thin films, and the doping of PMnN effectively improve the ferroelectricity of PZT thin films.

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System

Comparison Between In-situ Annealing and External Annealing For Barium Ferrite Thin Films Made by RF Magnetron Sputtering

2005 ◽  
Vol 875 ◽  
Author(s):  
A. R. Abuzir ◽  
W. J. Yeh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Barium Ferrite ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
Axis Orientation ◽  
Average Value ◽  
Ferrite Thin Films

AbstractDue to their large magnetic anisotropy perpendicular to the film plane, barium ferrite thick films (BaFe12O19, or BaM) with c-axis orientation are attractive candidates for microwave applications [1,2]. Barium ferrite thin films on silicon substrates without under layer have been deposited under various conditions by RF magnetron sputtering. The structure of the as-grown films is amorphous. External annealing in air has been done at 950°C for ten minutes to crystallize the films. C-axis oriented thin films with squareness of about 0.87 and coercivity of about 3.8KOe are obtained.Thick BaM films with c-axis orientation are difficult to achieve with one single deposition. Multilayer technique looks promising to grow thick films [3]. The external annealing process is difficult to incorporate with the multilayer procedure. An in-situ annealing procedure has been developed to obtain films, which can be used as the basic component for future multilayer deposition. Barium ferrites are first magnetron sputtered on bare silicon substrates in Ar + O2 atmosphere at substrate temperature of 500-600°C, the deposition pressure was kept about 0.008 torr. After the deposition, the temperature of the substrate is immediately increased to about 860°C for ten minutes in 140 torr of argon (80%) and oxygen (20%) mixture of gas, which was introduced into the chamber without breaking the vacuum. With the in-situ process, c-axis oriented thin films of 0.88 squareness and coercivity value of about 4.3KOe are obtained.Both annealing methods seem to have the similar effect on the perpendicular squareness and coercivity at various film thicknesses. The average value of the saturation magnetization Ms obtained from the in-situ annealing using multilayer technique is higher than that of the external one. We have grown films up to 1.0 micron thickness using the multilayer technique, in which three layers of 0.3 μm thickness each are deposited until the final thickness is reached. After the deposition of each layer, it was in-situ annealed before starting the deposition of the next layer. With the multilayer technique, coercivity of about 3.5 KOe and average value of the saturation magnetization Ms of about 4.0 K Gauss is obtained.

scholarly journals Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Chung-Hua Chao ◽  
Mao-Yi Chen ◽  
Chii-Ruey Lin ◽  
Yueh-Chung Yu ◽  
Yeong-Der Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flow Rate Ratio ◽  
Silicon Substrates ◽  
Pt Electrode ◽  
Ultraviolet Photodetectors

This paper describes a fabrication and characterization of ultraviolet (UV) photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002) thin film. Plasma enhanced chemical vapor deposition (PECVD) system was employed to deposit ZnO (0002) thin films onto silicon substrates, and radio-frequency (RF) magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at450∘Cin two different ambients (argon and nitrogen) to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), photoluminescence (PL), UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H5)2] to carbon dioxide (CO2) and then combined with Pt electrode annealed at450∘Cin argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power

2020 ◽  
Vol 12 (10) ◽  
pp. 1568-1571
Author(s):  
Seokwon Lee ◽  
Jung Hyun Kim ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Tungsten Carbide ◽  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Glass Substrates ◽  
Frequency Power ◽  
Scanning Electron ◽  
Sputtering System

In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.

A Study on the Selective Nucleations for Formation of Large Single Grains in PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Jang-Sik Lee ◽  
Eung-Chul Park ◽  
Jung-Ho Park ◽  
Byung-Il Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Perovskite Phase ◽  
Breakdown Field ◽  
Pzt Thin Films ◽  
Random Nucleation ◽  
Saturation Polarization ◽  
Pt Electrodes ◽  
Pzt Films ◽  
Pt Films

AbstractSelective nucleation and lateral growing method have been developed for high quality ferroelectric PZT(65/35) thin films using perovskite-phase PZT island seed. The PZT films on PZT seed island were transformed into the perovskite phase at temperatures as low as 540°C, which is 150°C lower than compared to that of PZT thin films deposited on Pt films. The temperature difference enables lateral growth without undesirable random nucleation. Maximum grain sizes of the perovskite-phase PZT films were determined by the annealing temperature. The PZT thin films show a leakage current density of 8×10−8 A/cm2, breakdown field of 1240 kV/cm, saturation polarization of 42 μC/cm2, and remanent polarization of 30 μC/cm2, whose values were maintained up to 2×1011 cycles. In this study, we show that when there was no grain boundary in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. So the main source of degradation is the grain boundary in the PZT thin films.

MICROSTRUCTURE AND PROPERTIES OF Sm-DOPED BaTiO3 SPUTTERED FILMS: EFFECTS OF POST-ANNEALINGS AND DOPANT CONTENT

2011 ◽  
Vol 25 (11) ◽  
pp. 1559-1565
Author(s):  
C. H. WU ◽  
J. P. CHU ◽  
S. F. WANG ◽  
W. Z. CHANG
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Dopant Content ◽  
Si Substrates ◽  
Sputtered Films ◽  
Annealing Temperatures ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Electrical Characterizations ◽  
Sputtering System

Sm-doped BaTiO 3 thin films with ~200 nm thickness fabricated by rf magnetron sputtering system onto Pt/Ti/SiO 2/ Si substrates have been investigated. The effects of postannealing and the dopant content in a range of 0.1 to 2.2 at.% on microstructure and electrical properties were studied. The films were found to be amorphous in the as-deposited state and became fully crystallized after annealing at 750°C and above. The addition of Sm in the BaTiO 3 films resulted in the inhibition of grain growth. Electrical characterizations show that the dielectric permittivity increased with increasing annealing temperatures and the 2.2% Sm-doped film had the low leakage current of 1.29×10-9 A at an applied electric field of 100 KV/cm.

Elastic Deformations during Phase Transition in Freestanding BaTiO3 Thin Films.

2002 ◽  
Vol 718 ◽  
Author(s):  
Jaya P. Nair ◽  
Natalie Stavitski ◽  
Ilya Zon ◽  
Konstantin Gartsman ◽  
Igor Lubomirsky
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
Elastic Deformations ◽  
Substrate Removal ◽  
Gel Technique ◽  
Deposited Films ◽  
Tetragonal Phase Transition

AbstractElastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.

Preparation and magnetic properties for FeSex/Bi2Se3 bilayer films on silicon substrates by RF magnetron sputtering

2019 ◽  
Vol 12 (02) ◽  
pp. 1950018 ◽  
Author(s):  
J. Zhang ◽  
K. Zhao ◽  
X. S. Yang ◽  
Y. Zhao
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Weak Ferromagnetism ◽  
Film Plane ◽  
Silicon Substrates ◽  
Bilayer Films

FeSex/Bi2Se3 bilayer thin films were grown by RF magnetron sputtering on silicon substrates with different thicknesses of Bi2Se3 and the structural, morphological and magnetic properties were investigated. FeSex/Bi2Se3 bilayer films had Bi2Se3 crystallites oriented with c-axis perpendicular to the film plane, and exhibited weak ferromagnetism at low temperature due to the ferromagnetic FeSe2. The thickness of Bi2Se3 layer affected both crystalline structure of Fe–Se layer and the magnetic property.

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