Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power

2020 ◽  
Vol 12 (10) ◽  
pp. 1568-1571
Author(s):  
Seokwon Lee ◽  
Jung Hyun Kim ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Tungsten Carbide ◽  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Glass Substrates ◽  
Frequency Power ◽  
Scanning Electron ◽  
Sputtering System

In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.

Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

Mimicking the Formation of Biomineral Composites through Deposition of Calcium Carbonate Thin-Films on Modified Fiber Net Templates

2003 ◽  
Vol 774 ◽  
Author(s):  
Parayil Kumaran Ajikumar ◽  
Rajamani Lakshminarayanan ◽  
Valiyaveettil Suresh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Calcium Carbonate ◽  
Scanning Electron Microscope ◽  
X Ray Diffraction ◽  
X Ray ◽  
Controlled Deposition ◽  
Scanning Electron

AbstractThin films of calcium carbonate were deposited on the surfaces of synthetic substrates using a simple biomimetic pathway. The Nylon 66 fiber knit pre-adsorbed with acidic polymers was used as a template for the controlled deposition of CaCO3 thin film. The presence of the soluble macromolecules on the fiber knit surface was characterized using ATR-FTIR spectroscopy. The characterization of the mineral films was carried out using scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive Xray scattering (EDX) studies.

A NOVEL METHOD FOR PRODUCING NANOSTRUCTURED CdSe THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950175 ◽  
Author(s):  
İSHAK AFŞIN KARİPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
Sem Analysis ◽  
Optical Bandgap ◽  
Cdse Thin Film ◽  
Glass Substrates ◽  
Commercial Glass ◽  
Ph Level

In this study, we produced Cadmium selenide (CdSe) crystalline thin film on commercial glass substrates via chemical bath deposition. Transmittance, absorbance, refractive index and optical bandgap of thin films were examined by UV/vis spectrum. XRD revealed a hexagonal form. The pH level of the baths in which CdSe thin films were deposited varied and optical and structural properties of the resulting thin films were analyzed. SEM analysis was used for surface analysis. Some features of the films were supposed to change with pH and these properties were investigated by testing different pH levels, which were 8, 9, 10 and 11. The variation of the optical bandgap changed between 1.60 and 1.75[Formula: see text]eV, according to the pH of deposition bath. Film thickness varied from 60[Formula: see text]nm to 93[Formula: see text]nm, with the variation of deposition bath’s pH. Moreover, it has been found that refractive index values were also changed with film thickness; these were calculated as 2.28, 2.19, 2.22 and 2.36 for 93.27, 60.97, 61.09 and 60.18[Formula: see text]nm, respectively. Dielectric constant also varied with refractive index, taking values 0.85, 0.75, 0.78, 0.93 for refractive indexes 2.28, 2.19, 2.22 and 2.36, respectively.

Crystalline and Structural Properties Dependence on RF Power and Deposition Temperature of Sputtered Nanocrystalline Silicon Thin Films on Teflon and Glass Substrates

2012 ◽  
Vol 576 ◽  
pp. 475-479
Author(s):  
Norhidayatul Hikmee Mahzan ◽  
Shaiful Bakhtiar Hashim ◽  
Sukreen Hana Herman ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Properties ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Rf Power ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Scanning Electron

Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc-Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate.

scholarly journals Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

2019 ◽  
Vol 37 (3) ◽  
pp. 454-464
Author(s):  
Asim Mantarci ◽  
Mutlu Kundakçi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Sem Analysis ◽  
Potential Candidate ◽  
Rf Power ◽  
Optical Phonon Mode ◽  
Vis Spectroscopy ◽  
Measurement Results

AbstractGaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

Preparation of Standards for Thin Film Thickness Measurements by Energy Dispersive X-ray Analysis

1981 ◽  
Vol 35 (3) ◽  
pp. 324-328 ◽  
Author(s):  
G. W. Kammlott
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Energy Dispersive ◽  
Thin Film Thickness ◽  
X Ray ◽  
Direct Measurements ◽  
Thickness Measurements ◽  
Scanning Electron

Thin film measurements by energy dispersive x-ray analysis require appropriate standards. A method for preparing such standards by deposition of thin films and direct measurements of their thickness with a scanning electron microscope is described. These standards have been used to measure thickness of corrosion layers to within ±8.0 nm accuracy.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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