MICROSTRUCTURE AND PROPERTIES OF Sm-DOPED BaTiO3 SPUTTERED FILMS: EFFECTS OF POST-ANNEALINGS AND DOPANT CONTENT

2011 ◽  
Vol 25 (11) ◽  
pp. 1559-1565
Author(s):  
C. H. WU ◽  
J. P. CHU ◽  
S. F. WANG ◽  
W. Z. CHANG
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Dopant Content ◽  
Si Substrates ◽  
Sputtered Films ◽  
Annealing Temperatures ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Electrical Characterizations ◽  
Sputtering System

Sm-doped BaTiO 3 thin films with ~200 nm thickness fabricated by rf magnetron sputtering system onto Pt/Ti/SiO 2/ Si substrates have been investigated. The effects of postannealing and the dopant content in a range of 0.1 to 2.2 at.% on microstructure and electrical properties were studied. The films were found to be amorphous in the as-deposited state and became fully crystallized after annealing at 750°C and above. The addition of Sm in the BaTiO 3 films resulted in the inhibition of grain growth. Electrical characterizations show that the dielectric permittivity increased with increasing annealing temperatures and the 2.2% Sm-doped film had the low leakage current of 1.29×10-9 A at an applied electric field of 100 KV/cm.

Structural and Electrical Properties of BaTio3 Thin Films Grown on p-Si Substrates with Different Device Designs

1993 ◽  
Vol 318 ◽  
Author(s):  
L. H. Chang ◽  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Single Layer ◽  
Relative Dielectric Constant ◽  
Rf Magnetron Sputtering ◽  
Phonon Modes ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTRF magnetron sputtering of BaTiO3 on (100) p-Si was performed to produce a high-quality BaTiO3/p-Si interface and BaTi03 insulator gates with high dielectric constant and low leakage current. Through different processing and device designs, different capacitor structures, including single layer amorphous, single layer polycrystalline and bi-layer amorphous on polycrystal-line, were investigated in this study. Raman spectroscopy showed the optical phonon modes of the BaTiO3 thin films with different structures. The structural properties of the films were characterized by X-ray diffraction. Using both the quasistatic and the high-frequency capacitance-voltage measurements, the interface-trap density was estimated at high 1011 eV−1 cm−2. The relative dielectric constant of the composite structure was controlled in a range from 30 to 130. The leakage current density was as low as 8×10−10 A/cm2 at a field intensity of (2±0.5)×105 V/cm. Breakdown voltage varied from 5x105 to 2×106 V/cm.

Correlation of Microwave Dielectric Properties and Microstructure of Unpatterned Ferroelectric Thin Films

2002 ◽  
Vol 720 ◽  
Author(s):  
R. G. Geyer ◽  
M.W. Cole ◽  
P.C. Joshi ◽  
E. Ngo ◽  
C. Hubbard ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Solution Deposition ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal ◽  
Resonator System ◽  
Film Substrate

AbstractThe influence of low concentration (1 mol%) Mg doping on the structural, microstructural, surface morphological and dielectric properties of Ba1-xSrxTiO3 thin films has been measured and analyzed. The films were fabricated on MgO and Pt-Si substrates via the metalorganic solution deposition technique using carboxylate-alkoxide precursors and post deposition annealed at 800 °C (film/MgO substrates) and 750 °C (film/Pt-Si substrates). The structure, microstructure, surface morphology and film/substrate compositional quality were analyzed and correlated to the films dielectric and insulating properties. Dielectric properties of unpatterned films were measured at 10 GHz with a coupled/split dielectric resonator system and at 100 kHz using metal-insulator-metal capacitors. The Mg-doped BST films exhibited improved dielectric loss and insulating characteristics compared to the undoped Ba0.6Sr0.4TiO3 thin films. The improved dielectric properties, low leakage current, and good tunability of the low level Mgdoped BST thin films merit strong potential for utilization in microwave tunable devices.

Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/RuO2 Thin Films by MOCVD

2003 ◽  
Vol 768 ◽  
Author(s):  
Kazuo Shinozaki ◽  
Akinori Iwasaki ◽  
Naoki Wakiya ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Lower Growth ◽  
Si Substrates ◽  
Low Leakage ◽  
Crystal Orientations ◽  
Low Leakage Current ◽  
Electrical Resistivities ◽  
Lower Growth Rate

AbstractRu and RuO2 thin films were deposited on (100)LaAlO3 (LAO), (100)MgO and (111)Pt/Ir/ SiO2/Si substrates byMOCVD. Pb(Zr,Ti)O3 (PZT) was fabricated on Ru/LAOand RuO2/LAO. Ru thin films deposited at 400°C or higher on LaAlO3 and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/SiO2/Si. RuO2 thin films with (100) orientation were deposited both on LaAlO3 and Pt/Ir/SiO2/Si. (110)-oriented RuO2 thin film was deposited on MgO. Epitaxial RuO2 thin films were deposited on LaAlO3 and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and RuO2 thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the RuO2 films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on RuO2/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/cm2. (110) PZT on RuO2/LAO showed lower Pr (∼30 μC/cm2), but showed low leakage current (10-9 A/cm2 at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics.

scholarly journals Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

2021 ◽  
Author(s):  
M.L.V. Mahesh ◽  
Prem Pal ◽  
Bhanu Prasad V.V. ◽  
A.R. James
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sem Analysis ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Low Loss ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current

Abstract Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diffraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

scholarly journals Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 318 ◽  
Author(s):  
Xiaoyang Chen ◽  
Taolan Mo ◽  
Binbin Huang ◽  
Yun Liu ◽  
Ping Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Breakdown Strength ◽  
Rf Magnetron Sputtering ◽  
Capacitance Density ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Low Leakage ◽  
Low Leakage Current

Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications.

Large Remanent Polarization and Low Leakage Current in High-Tc 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 804-807
Author(s):  
Zhen Kun Xie ◽  
Zhen Xing Yue
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
High Curie Temperature ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Average Grain Size ◽  
Measured Polarization

High Curie-temperature (Tc) polycrystalline 0.2Bi (Ni1/2Ti1/2)O3-0.8PbTiO3 (0.2BNT-0.8PT) thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates via an aqueous chemical solution deposition (CSD) technique. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 55 nm. The dielectric, piezoelectric and ferroelectric properties of the films was investigated. The permittivity peak appeared at 485 °C, which was 100 °C higher than that of Pb (Zr,Ti)O3 thin films. The local effective piezoelectric coefficient d33 was 45 pm/V at 3V. Moreover, a large remnant polarization with 2Pr up to 92 uC/cm2 and a small leakage current of 2.2×10-5 A/cm2 under an electric field of 400 kV/cm were obtained. The magnitude of the measured polarization and the high Curie temperature make the 0.2BNT-0.8PT films promising candidates for application in high-temperature ferroelectric and piezoelectric devices.

Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods

2007 ◽  
Vol 336-338 ◽  
pp. 21-23
Author(s):  
Qiu Sun ◽  
Ying Song ◽  
Fu Ping Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Thermal Annealing Process ◽  
Better Than

The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with 1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J = 4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found.

LOW-TEMPERATURE GROWTH AND ELECTRIC PROPERTIES OF K0.5Na0.5Nbo3 THIN FILMS BY MICROWAVE IRRADIATION

2018 ◽  
Vol 25 (07) ◽  
pp. 1950014
Author(s):  
N. LI
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Microwave Irradiation ◽  
Electric Properties ◽  
Solution Deposition ◽  
Temperature Growth ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current

K0.5Na0.5Nbo3 wet films were spin-coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition method. The microwave irradiation was introduced as the annealing method. The microstructure and electric properties of KNN thin films were tested and analyzed. It was found that the KNN thin film can be well crystallized by microwave irradiation at the temperature as low as 425∘C. The KNN thin film annealed at 425∘C gains the uniform microstructure, grain refinement, better electric properties and low leakage current density.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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