Relaxor Properties and Tunability of Electron-Irradiated Thin Poly(vinlidene fluoride-trifluoroethylene) Copolymer Film

2012 ◽  
Vol 560-561 ◽  
pp. 892-898 ◽  
Author(s):  
Li Tian ◽  
Xiang Jian Meng ◽  
Jing Yang ◽  
Jing Lan Sun ◽  
Sheng Zhao Yuan ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Dielectric Spectroscopy ◽  
High Energy ◽  
Copolymer Film ◽  
Relaxor Behavior ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
Gauche Conformation ◽  
Trans Conformation ◽  
X Ray

The effect of high energy electron irradiation on poly(vinlidene fluoride-trifluoroethylene) copolymer film with thickness about 180 nm has been studied. Both dielectric spectroscopy investigation and X-Ray Diffraction show that all-trans conformation of pre-irradiated films is transformed to trans-gauche conformation after irradiation. The relaxor behavior of irradiated sample obeys the modified Curie-Weiss and Vogel-Fulcher law. And the tunability is increased from 42% to 63% after irradiation.

X‐ray diffraction characterization of microdefects in silicon crystals after high‐energy electron irradiation

2011 ◽  
Vol 208 (11) ◽  
pp. 2552-2557 ◽  
Author(s):  
V. B. Molodkin ◽  
S. I. Olikhovskii ◽  
E. G. Len ◽  
B. V. Sheludchenko ◽  
S. V. Lizunova ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Crystals

Influence of high energy electron irradiation on the network structure of gelatin hydrogels as investigated by small-angle X-ray scattering (SAXS)

2017 ◽  
Vol 19 (19) ◽  
pp. 12064-12074 ◽  
Author(s):  
Emilia I. Wisotzki ◽  
Paolo Tempesti ◽  
Emiliano Fratini ◽  
Stefan G. Mayr
Keyword(s):  
Electron Irradiation ◽  
Network Structure ◽  
Small Angle ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray ◽  
X Ray Scattering ◽  
Structural Differences ◽  
Ray Scattering

Small-angle X-ray scattering revealed ranging structural differences in physically entangled and irradiation-crosslinked gelatin hydrogels.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Characterization Techniques For Laser-Annealed Polysilicon on Insulating Layers

1980 ◽  
Vol 1 ◽  
Author(s):  
J. T. Schott ◽  
J. J. Comer
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Characterization Techniques ◽  
Cw Laser ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTVarious characterization techniques are applied to pulsed and cw laser-annealed polysilicon layers deposited on oxide layers. The results are used to compare these techniques as to the type and completeness of information provided, as well as sample preparation requirements and general ease or difficulty of measurement. The techniques employed include scanning electron microscopy (SEM), electron channeling micrographs and selected area channeling patterns (SACP), reflection (high energy) electron diffraction (RHEED), transmission electron microscopy (TEM) and selected area diffraction (SAD), x-ray diffraction, optical techniques and etching techniques.

HETEROEPITAXIAL GROWTH AND ANNEALING OF γ-AL2O3 THIN FILMS ON SILICON

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4302-4305 ◽  
Author(s):  
LIWEN TAN ◽  
JUN WANG ◽  
QIYUAN WANG ◽  
YUANHUAN YU ◽  
LANYING LIN
Keyword(s):  
High Frequency ◽  
Chemical Vapor ◽  
High Energy ◽  
Annealing Effect ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical

The γ- Al 2 O 3 films were grown on Si (100) substrates using the sources of TMA ( Al ( CH 3)3) and O 2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the γ- Al 2 O 3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was γ- Al 2 O 3(100)/ Si (100). The thickness uniformity of γ- Al 2 O 3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000°C in O 2 atmosphere. The high-frequency C-V and leakage current of Al /γ- Al 2 O 3/ Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick γ- Al 2 O 3 film on silicon increases from 17V to 53V.

Heteroepitaxial growth of C60 on tetracene single crystal

2013 ◽  
Vol 1501 ◽  
Author(s):  
Tetsuhiko Miyadera ◽  
Hiroki Mitsuta ◽  
Noboru Ohashi ◽  
Tetsuya Taima ◽  
Ying Zhou ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Direct Evidence ◽  
High Energy ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Pattern ◽  
Initial Stage

ABSTRACTWe have developed a method for epitaxial growth of C60 thin films on tetracene single crystals. The crystal orientation of the C60 film was examined by reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD). In-situ observation by RHEED revealed that the C60 crystallizes from the very initial stage of the deposition (0.1 nm). A 6-fold symmetric pattern, which was observed in a XRD polar scan, can be taken as direct evidence for the epitaxial growth of C60 commensurate with the tetracene (001) surface lattice.

Fe3O4/MgO Superlattices Grown on MgO(OOl) and Fe/MgO(001) by Molecular Beam Epitaxy

1997 ◽  
Vol 474 ◽  
Author(s):  
G. Chern ◽  
C. L. Chang ◽  
Y. R. Chean
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
Oxide Interface ◽  
High Crystalline Quality ◽  
X Ray ◽  
Coated Surface

AbstractThe growth and structural characterization of Fe3O4/MgO superlattices on MgO(001) and Fe-coated MgO(001) are compared. Long modulated coherence and sharp interface are revealed by X-ray diffraction and reflection high energy electron diffraction (RHEED). For the superlattice grown directly on MgO(001), high crystalline quality is comparable to the previous report on the oxide superlattice system. For the superlattice grown on Fe/MgO(001), both chemical and lattice spacing modulations are maintained which is different from the polycrystlline structure of the Fe3O4/NiO grown on Ni-based system. This superiority of the growth on Fe-coated surface results from both the smaller lattice mismatch and the oxidation state of Fe relative to MgO. The changes of the RHEED intensity during the growth of these superlattices are also measured. The evolution of the oxide interface during the growth of Fe3O4/MgO is quantitatively presented.

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