Influence of Annealing Time on the Properties of GZO Thin Films Fabricated by Direct Current Magnetron Sputtered

2012 ◽  
Vol 602-604 ◽  
pp. 1503-1507
Author(s):  
Xia Wu ◽  
Hui Dong Yang ◽  
Ji Sen Zhang ◽  
Long Gu
Keyword(s):  
Annealing Time ◽  
Visible Region ◽  
Diffraction Peak ◽  
Glass Slide ◽  
Optical And Electrical Properties ◽  
Dc Magnetron Sputtering ◽  
Crystal Face ◽  
Average Transmittance ◽  
Resident Stress ◽  
Crystal Boundaries

The films were deposited on glass slide substrates by DC magnetron sputtering method by using a ZnO target doped with Ga2O3 of 3wt%, then annealing processing were implemented respectively under the temperature of 250 °C with the time of 0,30,60,90 and 120 minutes.Effects of sputtering on the structural and optical and electrical properties of GZO films had been investigated. The results showed that GZO films with high quality could be fabricated after vacuum-annealed. crystal face of GZO films had a good tendency of c axis. the (002) diffraction peak reached a maximum at the annealing time of 1.5 hours; at the same time ,crystal grain became larger and crystal boundaries narrow, film’s resident stress reduced to 0.5 Mpa.With the annealing time increasing, the resistivity of GZO films decreased and reached the minimum which was 9.1×10-4 Ω·cm at 1.5 hours. While the average transmittance decreased sharply after the time of 1.5 hours in visible region. Consequently, the best annealing time is 1.5 hours.

Influence of the Temperature on GZO Film Deposited by DC Magnetron Reactive Sputtering

2012 ◽  
Vol 446-449 ◽  
pp. 288-292
Author(s):  
Song Yu ◽  
H D Yang ◽  
B Huang ◽  
J S Zhang
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Substrate Temperature ◽  
Glass Slide ◽  
Optical And Electrical Properties ◽  
Average Transmittance ◽  
Direct Current Magnetron Sputtering ◽  
Dc Magnetron Reactive Sputtering ◽  
Conductive Thin Films ◽  
Crystal Boundaries

GZO transparent conductive thin films were deposited by the direct current magnetron sputtering method from a ZnO target doped with Ga2O3 of 3wt% on glass slide substrates under high pressure of argon. The effect of substrate temperature on the GZO film’s morphology, optical and electrical properties is investigated by using scanning electron microscopy (SEM), UV spectrophotometer, four point probe and Spectroscopic Ellipsometer. The results showed that GZO thin films with high quality could be fabricated under the high pressure of argon.When substrate temperature is 250°C or below, surface morphology of thin films can be significantly improved.With the increase of substrate temperature, the crystal grain become larger, the crystal boundaries narrow and become clear, and reach a best case at 250°C. At the same time, the resistivity of GZO thin films decrease and reach the minimum which is 1.099×10-3 Ω•cm at 300°C while the average transmittance increase to 90%. Consequently, the properties of morphology began to get worse with the increase of temperature above 300°C.

Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

2009 ◽  
Vol 23 (08) ◽  
pp. 1077-1083 ◽  
Author(s):  
JING XU ◽  
GUANGHUI MIN ◽  
XIAOHUA ZHAO ◽  
LIJIE HU ◽  
HUASHUN YU
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Diffraction Peak ◽  
Dc Magnetron Sputtering ◽  
Crystal Face ◽  
Deposited Films ◽  
Stylus Profiler ◽  
Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

Influence of the Sputtering Pressure on the Properties of TAZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1045-1048
Author(s):  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Dc Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Sputtering Pressure ◽  
Deposited Films

Transparent conducting Ti-Al co-doped zinc oxide films (TGZO) with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by DC magnetron sputtering at room temperature. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The Ar sputtering pressure was varied from 1.5 to 13 Pa. The electrical resistivity decreases when the sputtering pressure increases from 1.5 to 7.5 Pa. The electrical resistivity increases when the sputtering pressure increases from 7.5 to 13 Pa. When the sputtering pressure is 7.5 Pa, it is obtained that the lowest resistivity is 2.18×10-4Ω⋅cm. In the visible region, all the deposited films show a high average transmittance of above 92 %.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Characterization of Transparent Conducting Pulsed Laser Deposited Films in the Indium Zinc Oxide System

1998 ◽  
Vol 547 ◽  
Author(s):  
A. Rougier ◽  
N. Naghavi ◽  
C. Marcel ◽  
F. Portemer ◽  
L. Dupont ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Visible Region ◽  
Pulsed Laser ◽  
Oxide System ◽  
Optical Measurements ◽  
K Value ◽  
Indium Zinc Oxide ◽  
Average Transmittance

AbstractThin films of indium zinc oxide so called IZO were prepared with pulsed laser deposition. It was found that the crystalline structure, the composition and the morphology of the films as well as the optical and electrical properties were quite sensitive to the deposition conditions namely to the temperature and oxygen pressure. The crystallinity of the ZnkIn2O3+k (k from 1 to 5) thin films increases as the substrate temperature increases. An average transmittance of 85 % in the visible region was obtained for any k values. Optical measurements show a continuous decrease of the band gap as the zinc amount increases. The highest conductivity reported is for the ZnIn2O4, thin films deposited at 300 °C (σ = 1.2 103 S/cm). Increasing the amount of Zn (i.e. k value) was found to result in a conductivity decrease. Finally, a good correlation between the electric mobility and the optical mobility is obtained.

Optical and electrical properties and simulation curves of NiO/Al/NiO transparent conductive film

2019 ◽  
Vol 33 (01) ◽  
pp. 1850417 ◽  
Author(s):  
Shuyun Wang ◽  
Kailin Wen ◽  
Yang Sun ◽  
Xianwu Xiu ◽  
Shuyun Teng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Film ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Light Wavelength ◽  
Conductive Films ◽  
Conductive Film ◽  
Average Transmittance ◽  
Interface Characteristics ◽  
Experimental Data Analysis

In this paper, NiO/Al/NiO transparent conductive films were prepared by magnetron sputtering at the room temperature. Effects of the NiO and Al layers thicknesses on the optical and electrical properties of the NiO/Al/NiO laminated films were analyzed. When the light wavelength falls in range 300–900 nm, with the increase of the NiO and Al layers thicknesses, the transmittance of the laminated film first increases significantly and then decreases slightly, finally tends to be stable. The laminated film obtained the best optical and electrical properties when the NiO layer is 40 nm and the Al layer is 12 nm. The maximum transmittance is 83%, the average transmittance is 77.3%, the film resistivity is [Formula: see text] and the carrier concentration is [Formula: see text]. At the same time, the transmittance of laminated film is simulated by FDTD software. But the simulation curve is different from the experimental data. Analysis results show that, with the NiO dielectric is added on both sides of the metal Al film, the light reflection characteristic of laminated film has been completely different from that of the single Al metal film because of the change of interface characteristics between Al film and NiO film, and the actual luminous transmittance greatly increases.

Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

2016 ◽  
Vol 30 (27) ◽  
pp. 1650210 ◽  
Author(s):  
B. Ilahi ◽  
M. Abdel-Rahman ◽  
Z. Zaaboub ◽  
M. F. Zia ◽  
M. Alduraibi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Oxygen Diffusion ◽  
Multilayer Structure ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Film Resistance ◽  
Dc Magnetron Sputtering ◽  
Temperature Coefficient Of Resistance ◽  
Multiple Phase

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400[Formula: see text]C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O[Formula: see text] and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Effects of Deposition Time on the Structure and Properties of AZO Thin Films Deposited on Quartz Glass by Magnetron Sputtering

2019 ◽  
Vol 807 ◽  
pp. 63-67
Author(s):  
Jing Kang Ba ◽  
Yun Zhang ◽  
Xiao Jing Wang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Deposition Time ◽  
Diffraction Peak ◽  
Visible Light Region ◽  
Structure And Properties ◽  
Light Region ◽  
Average Transmittance ◽  
Mean Grain Size ◽  
The Mean

The AZO films deposited on quartz glass by magnetron sputtering with different deposition time various from 30min to 120min.All of the obtained samples had a (002) diffraction peak range from 34.31 to 34.52°, while the mean grain size increased from 30.1nm (30min) to 56.1nm (120min) respectively. The XPS survey indicated the photoelectron peaks of Zn ,O and C elements occured. The optimal transmittance of the films reduced obviously from about 92% to 78% near 550nm with deposition time increased from 30min to 120min. And the average transmittance of AZO films prepared at 30, 60 and 90min was about 85% in the visible light region.

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