Characterization of TiAlBN Nanocomposite Coating Deposited via Radio Frequency Magnetron Sputtering Using Single Hot-Pressed Target

2012 ◽  
Vol 626 ◽  
pp. 298-301 ◽  
Author(s):  
Zulkifli Mohd Rosli ◽  
Kwan Wai Loon ◽  
Jariah Mohd Juoi ◽  
Nayan Nafarizal ◽  
Zainab B. Mahamud ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Bias Voltage ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Nanocomposite Coating ◽  
Test Method ◽  
X Ray ◽  
Excellent Adhesion

TiAlBN coatings have been deposited at varying bias voltage of 0, -60, and-150 V by radio frequency (RF) magnetron sputtering technique. A single hot-pressed Ti-Al-BN target was used for the deposition process. With glancing angle X-ray diffraction analysis (GAXRD), the nanocrystalline (nc-) (Ti,Al)N phase was identified. In addition, the existence of BN and TiB2amorphous (a-) phase were detected by X-ray photoelectron spectroscopy (XPS) analysis. Thus, the deposited TiAlBN coatings were confirmed as nc-(Ti,Al)N/a-BN/a-TiB2nanocomposite. On the other hand, it was found that optimum bias voltage used in present study is-60 V where the deposited TiAlBN coating exhibits an excellent adhesion quality. The adhesion quality of the coatings deposited at-60V bias voltage is classified as HF 1 evaluated using the Rockwell-C adhesion test method (developed by the Union of German Engineers).

scholarly journals Deposition of Nb-Si-C Thin Films by Radio Frequency Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 524
Author(s):  
Zifeng Li ◽  
Guotan Liu ◽  
Guanqi Liu ◽  
Xiaoshuo Zhu ◽  
Yudong Fu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Indentation Test ◽  
Rf Magnetron Sputtering ◽  
Max Phase ◽  
Chemical Components ◽  
X Ray ◽  
Sputtering Power

Nb-Si-C thin films were deposited onto Si(001) substrates by radio frequency (RF) magnetron sputtering using individual Nb, Si, and C targets. The effects of varying the sputtering power on the phase composition of the new thin films were studied. The structure, chemical components, and morphology of the thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. The experimental results and first-principles calculations indicate that a new MAX phase (Nb4SiC3) can be synthesized at a sputtering power of 65 W. The four-point probe test showed that the resistivity of the film containing Nb4SiC3 phase was 0.99 μΩ·m. A nano-indentation test showed that the hardness of the film containing Nb4SiC3 phase was 15 GPa, and the elastic modulus was 200 GPa.

scholarly journals Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Application of V2O5 in Thin Film Microbatteries Prepared by RF Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 931-934 ◽  
Author(s):  
Liang Tang Zhang ◽  
Jie Song ◽  
Quan Feng Dong ◽  
Sun Tao Wu
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Unit Area ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mems Technology ◽  
Surface Morphologies ◽  
Sputtering System

The polycrystalline V2O5 films as the anode in V2O5 /LiPON /LiCoO2 lithium microbattary were prepared by RF magnetron sputtering system. The V2O5 films’ crystal structures, surface morphologies and composition were characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The microbatteries were fabricated by micro electro-mechanical system (MEMS) technology. The battery active unit area is 500μm×500μm, and the thickness of V2O5, LiPON and LiCoO2 films was estimated to be 200, 610, and 220nm, respectively. The discharge volumetric capacity is between 9.36μAhcm-2μm-1 and 9.63μAhcm-2μm-1 after 40 cycles.

Influence of Substrate on Structure and Magnetic Properties of Bi0.9Nd0.1FeO3 Thin Films by Radio Frequency Magnetron Sputtering Method

2013 ◽  
Vol 302 ◽  
pp. 146-150
Author(s):  
L.L. Li ◽  
Qiu Xiang Liu ◽  
Yan Zou ◽  
Xin Gui Tang ◽  
Yan Ping Jiang
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Cross Section ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Morphology ◽  
Influence Of Substrate

Bi0.9Nd0.1FeO3 (BNFO) films were deposited on Si (100) and (La,Sr)(Al,Ta)O3 (100) (LAST) substrate by radio frequency (RF) magnetron sputtering method respectively. The structure，morphology and magnetic properties were studied. X-ray diffraction (XRD) result indicates that the BNFO films on different substrate adopted different orientation. Cross-section scanning electron microscopy shows that the film thickness is 145 nm．Magnetic properties measurement shows that the film on Si(100) substrate has the larger saturation magnetization (Ms) of 3 686 emu/cm3, while the Ms value of the BNFO films on LSAT(100) substrate is only 1 213 emu/cm3.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

scholarly journals Synthesis, Microstructural, and Mechano-Tribological Properties of Self-Lubricating W-S-C(H) Thin Films Deposited by Different RF Magnetron Sputtering Procedures

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 272 ◽  
Author(s):  
Todor Vuchkov ◽  
Talha Bin Yaqub ◽  
Manuel Evaristo ◽  
Albano Cavaleiro
Keyword(s):  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Ambient Air ◽  
Transition Metal Dichalcogenide ◽  
Clear Indication ◽  
X Ray ◽  
Operating Environments ◽  
Reactive Mode

Carbon-alloyed transition metal dichalcogenide (TMD) coatings have great potential for providing a good tribological response in diverse operating environments. There are different ways to synthesize these coatings by magnetron sputtering, with no clear indication of the best possible route for potential upscaling. In this study, tungsten-sulfur-carbon (W-S-C) coatings were deposited by radio frequency (RF) magnetron sputtering via four different methods. All coatings were sub-stoichiometric in terms of the S/W ratio, with the bombardment of the growing film with backscattered Ar neutrals being the main mechanism governing the S/W ratio. The crystallinity of the films was dependent on the C and S contents. X-ray photoelectron spectroscopy (XPS) revealed W-S and W-C bonding in all coatings. Raman spectroscopy showed the presence of an a-C phase with predominant sp2 bonding. The hardness of the coatings may be related to the C content and the S/W ratio. A friction coefficient of 0.06–0.08 was achieved during sliding in ambient air by the coatings deposited in non-reactive mode with optimal C contents. The results indicate that sputtering in non-reactive mode should be the method of choice for synthesis of these coatings.

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