scholarly journals Deposition of Nb-Si-C Thin Films by Radio Frequency Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 524
Author(s):  
Zifeng Li ◽  
Guotan Liu ◽  
Guanqi Liu ◽  
Xiaoshuo Zhu ◽  
Yudong Fu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Indentation Test ◽  
Rf Magnetron Sputtering ◽  
Max Phase ◽  
Chemical Components ◽  
X Ray ◽  
Sputtering Power

Nb-Si-C thin films were deposited onto Si(001) substrates by radio frequency (RF) magnetron sputtering using individual Nb, Si, and C targets. The effects of varying the sputtering power on the phase composition of the new thin films were studied. The structure, chemical components, and morphology of the thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. The experimental results and first-principles calculations indicate that a new MAX phase (Nb4SiC3) can be synthesized at a sputtering power of 65 W. The four-point probe test showed that the resistivity of the film containing Nb4SiC3 phase was 0.99 μΩ·m. A nano-indentation test showed that the hardness of the film containing Nb4SiC3 phase was 15 GPa, and the elastic modulus was 200 GPa.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures

2012 ◽  
Vol 502 ◽  
pp. 77-81
Author(s):  
Z.Y. Zhong ◽  
J.H. Gu ◽  
X. He ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films

Indium tin oxide (ITO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target. The influence of substrate temperature on the structural, compositional, optical and electrical properties of the thin films were investigated by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer and four-point probes. All the ITO thin films show a polycrystalline indium oxide structure and have a preferred orientation along the (222) direction. The substrate temperature significantly affects the crystal structure and optoelectrical properties of the thin films. With the increment of substrate temperature, the electrical resistivity of the deposited films decreases, the crystallite dimension, optical bandgap and average transmittance in the visible region increase. The ITO thin film deposited at substrate temperature of 200 °C possesses the best synthetic optoelectrical properties, with the highest transmittance, the lowest resistivity and the highest figure of merit.

The Influence of O2/Ar on the Dielectric Properties of Bismuth Zinc Niobate Titanium Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 252 ◽  
pp. 202-206
Author(s):  
Xiao Hua Sun ◽  
Zhi Meng Luo ◽  
Shuang Hou ◽  
Cai Hua Huang ◽  
Jun Zou
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Titanium Thin Films

BZNT (Bi1.5Zn0.5Nb0.5Ti1.5O7) thin films were prepared on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering in different O2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It’s found that the O2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.

Characterization of TiAlBN Nanocomposite Coating Deposited via Radio Frequency Magnetron Sputtering Using Single Hot-Pressed Target

2012 ◽  
Vol 626 ◽  
pp. 298-301 ◽  
Author(s):  
Zulkifli Mohd Rosli ◽  
Kwan Wai Loon ◽  
Jariah Mohd Juoi ◽  
Nayan Nafarizal ◽  
Zainab B. Mahamud ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Bias Voltage ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Nanocomposite Coating ◽  
Test Method ◽  
X Ray ◽  
Excellent Adhesion

TiAlBN coatings have been deposited at varying bias voltage of 0, -60, and-150 V by radio frequency (RF) magnetron sputtering technique. A single hot-pressed Ti-Al-BN target was used for the deposition process. With glancing angle X-ray diffraction analysis (GAXRD), the nanocrystalline (nc-) (Ti,Al)N phase was identified. In addition, the existence of BN and TiB2amorphous (a-) phase were detected by X-ray photoelectron spectroscopy (XPS) analysis. Thus, the deposited TiAlBN coatings were confirmed as nc-(Ti,Al)N/a-BN/a-TiB2nanocomposite. On the other hand, it was found that optimum bias voltage used in present study is-60 V where the deposited TiAlBN coating exhibits an excellent adhesion quality. The adhesion quality of the coatings deposited at-60V bias voltage is classified as HF 1 evaluated using the Rockwell-C adhesion test method (developed by the Union of German Engineers).

scholarly journals Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering

Nanomaterials ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 590 ◽  
Author(s):  
Wei Zhong ◽  
Sunbin Deng ◽  
Kai Wang ◽  
Guijun Li ◽  
Guoyuan Li ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron ◽  
Growth Strategy ◽  
Radio Frequency Magnetron Sputtering ◽  
Large Area ◽  
X Ray ◽  
Sputtering Power ◽  
Mos2 Film

In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

Effects of Erbium alloying on the structural and piezoelectric properties of Aluminum Nitride thin films annealed under extreme thermal conditions

2013 ◽  
Vol 1519 ◽  
Author(s):  
V. Narang ◽  
D. Korakakis
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Thermal Conditions ◽  
Silicon Substrates ◽  
X Ray ◽  
Er Doping ◽  
Sputtering Power ◽  
P Type

ABSTRACTEffects of adding Erbium(Er) to Aluminum Nitride thin films on their structural and piezoelectric are reported along with stability of the films after annealing them at temperatures up to 600° C. The thin films samples were deposited on the (001) p-type silicon substrates by reactive magnetron sputtering, using the Er alloyed Aluminum targets with Er atomic concentrations of 0, 1, 3 and 4% and the magnetron sputtering power of 200 W. The samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XPS analysis was used to confirm the stoichiometry of AlN phase, Er atomic content and its possible chemical state in the films. Results show that alloying with Er results in higher piezoelectric coefficient d33 as compared to that in Er-free AlN thin films. Structural analysis of the films by XRD shows the shift of (0002) AlN peak to lower 2θ values upon Er doping, indicating the presence of uniform internal compressive stress.

Synthesis and Properties of Nanocrystalline Copper Indium Oxide Thin Films Deposited by Rf Magnetron Sputtering

2008 ◽  
Vol 8 (8) ◽  
pp. 3889-3894 ◽  
Author(s):  
Mandeep Singh ◽  
V. N. Singh ◽  
B. R. Mehta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Composite Target ◽  
Nanocrystalline Copper ◽  
X Ray ◽  
Copper Indium ◽  
Direct Band

Nanocrystalline copper indium oxide (CuInO2) thin films with particle size ranging from 25 nm to 71nm have been synthesized from a composite target using reactive Rf magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) combined with glancing angle X-ray diffraction (GAXRD) analysis confirmed the presence of delafossite CuInO2 phase in these films. The optical absorption studies show the presence of two direct band gaps at 3.3 and 4.3 eV, respectively. The resistance versus temperature measurements show thermally activated hopping with activation energy of 0.84 eV to be the conduction mechanism.

Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 543 ◽  
pp. 277-280
Author(s):  
Marius Dobromir ◽  
Alina Vasilica Manole ◽  
Simina Rebegea ◽  
Radu Apetrei ◽  
Maria Neagu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rutile Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

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