CHARACTERIZATION OF n AND p TYPE ZNO THIN FILMS DEPOSITED BY CATHODIC PULSED FILTERED VACUUM ARC SYSTEM

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1719-1724
Author(s):  
H. KAVAK ◽  
N. H. ERDOGAN ◽  
K. KARA ◽  
H. YANIS ◽  
Z. BAZ ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Wavelength Region ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Films ◽  
Zno Thin Film ◽  
Xrd Pattern ◽  
Zinc Nitride ◽  
P Type

The transparent, conductive n and p -type semiconducting ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. The structural, optical and electrical properties of n and p -type ZnO thin films are investigated after annealing at 450°C. 197 nm thick n -type ZnO thin film was deposited with oxygen pressure of 8.5 × 10-4 Torr . XRD pattern of annealed ZnO thin film exhibits hexagonal structure with (100), (101) and (110) orientations. The crystallite size of semiconductor ZnO thin film is 18 nm, interplanar distance 0.16 nm and lattice constant c is 0.52 nm for (110) orientation. The optical transmittance spectra of n and p -type ZnO films are over 90% in the visible wavelength region with optical energy gap 3.3 eV. p -type ZnO thin films are produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride is deposited with nitrogen pressure of 8.6 × 10-4 Torr and the thickness of this film is 179 nm. The oxidation of zinc nitride thin films at 450°C results in hexagonal structures p -type ZnO thin films. XRD pattern of this film has the same (100), (101) and (110) orientations with the same crystalline structures as the directly deposited ZnO thin film. Hall measurements indicated that ZnO films were p -type and the highest carrier concentration of 1.08 × 1018 cm -3 and mobility of 93.53 cm2/Vs were obtained.

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

scholarly journals Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)

2019 ◽  
Vol 15 (32) ◽  
pp. 114-121
Author(s):  
Maysar A. Salim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Energy Gap ◽  
Transparent Conducting Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Optical Energy Gap

Zinc Oxide (ZnO) thin films of different thickness were preparedon ultrasonically cleaned corning glass substrate, by pulsed laserdeposition technique (PLD) at room temperature. Since mostapplication of ZnO thin film are certainly related to its opticalproperties, so the optical properties of ZnO thin film in thewavelength range (300-1100) nm were studied, it was observed thatall ZnO films have high transmittance (˃ 80 %) in the wavelengthregion (400-1100) nm and it increase as the film thickness increase,using the optical transmittance to calculate optical energy gap (Egopt)show that (Egopt) of a direct allowed transition and its value nearlyconstant (~ 3.2 eV) for all film thickness (150, 180, 210, and 240)nm, so Zn0 thin films were used as a transparent conducting oxide(TCO) in various optoelectronic application such as a window in athin film solar cells.

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

2021 ◽  
Author(s):  
Ümit Doğan ◽  
Fahrettin Sarcan ◽  
Kamuran Kara Koç ◽  
Furkan Kuruoğlu ◽  
Ayşe Erol
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Metal Semiconductor Metal ◽  
Filtered Cathodic Vacuum Arc ◽  
Msm Photodetectors

Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.

Fabrication and Characterization of ZnO Thin Films by Sol-Gel Spin Coating Method for pH Measurement

2015 ◽  
Vol 1109 ◽  
pp. 99-103 ◽  
Author(s):  
K.L. Foo ◽  
U. Hashim ◽  
Chun Hong Voon ◽  
M. Kashif
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Low Cost ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Coating Method ◽  
Transparent Semiconductor

Transparent semiconductor ZnO thin films deposited on interdigitated electrode (IDE) substrate substrates were obtained by low-cost sol-gel method. The coated ZnO films were annealed in furnace at 500°C for 2 hours. The influence of surface morphologies, crystallization and optical properties was investigated. The structural properties of the annealed ZnO thin films were examined with FESEM and AFM. XRD result shows that all polycrystalline ZnO thin film after annealing have the orientation along the (002) plane. Both FESEM and XRD results revealed that ZnO thin films were composed of hexagonal ZnO crystals in nanoscale dimensions. Moreover, UV-Vis was employed to study the optical properties of the ZnO films. Besides that, the deposited ZnO thin film will further use for pH by I-V curve tracer.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

2014 ◽  
Vol 895 ◽  
pp. 41-44
Author(s):  
Seiw Yen Tho ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Water Contact ◽  
Pre Treatment ◽  
Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

Effects of Withdrawal Speeds on Properties of ZnO Thin Films Prepared by Sol-Gel Immerse Technique

2016 ◽  
Vol 680 ◽  
pp. 124-128 ◽  
Author(s):  
Chao Du ◽  
Yu Chun Zou ◽  
Zhi Qing Chen ◽  
Wen Kui Li ◽  
Shan Shan Luo
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Sol Gel ◽  
Wavelength Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Photoelectric Device ◽  
Near Ir ◽  
Crystal Film ◽  
Diffraction Peaks

ZnO thin films have attractive applications in photoelectric device, due to their excellent chemical, electrical and optical properties. In this paper, ZnO thin films with good c-axis preferred orientation and high transmittance are prepared on glass sheets by sol-gel immerse technique. The effects of withdrawal speeds on the growth process of thin film crystal, film crystal orientation and the crystallinity, the optical performance were investigated by XRD, SEM and UV-Vis spectrophotometry. The results show that the thin films were composed of better hexagonal wurtzite crystals with the c-axis prepared orientation. The transmittance of prepared thin films is over 80% in the visible-near IR region from 600 nm - 800 nm. ZnO films have sharp and narrow diffraction peaks, which indicates that the materials exhibit high crystallinity. With the withdrawal speeds increasing, the grain size of ZnO thin films and the intensity for all diffraction peaks were increased gradually. The growth model is changed from the stratified structure into the island structure in the growth process. The transmittance of the thin films decrease in the visible wavelength region, with the withdrawal speeds increasing.

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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