AbstractMullite (3Al2O3·2SiO2) has a low thermal expansion coefficient and a low dielectric constant making it a favorable material for substrate applications. Sintering of pure mullite ceramics is difficult, however, even above 1700°C. Thus, mullite-glass ceramics containing glass additives (Al2O3-MgO-SiO2 glass) which could be sintered at about 1600°;C were fabricated and their properties were investigated. The ternary system diagram of Al2O3-MgO-SiO2 shows that high SiO2 content glass depos its cristobalite at 200 to 270°C, which causes a substantial volume change, resulting in ceramic substrate cracking. Therefore it is particularly important to prevent crystallization of cristobalite from the glass phase in mullite-glass ceramics. The glass phase softens or partially fuses above 1600°C, and cristobalite formation in the glass phase occurs in the cooling process during firing. In order to obtain good substrates of mullite-glass ceramics, a higher temperature for sintering and faster cooling rate after firing are preferable. Analytical results by X-ray, SEM and EPMA show that mullite dissolves in the glass phase at a higher sintering temperature and more mullite crystallizes in the cooling process with a lower rate. The content of Al2O3 in the glass phase, therefore, increases with the increased sintering temperature and cooling rate, which may restrain crystallization of cristobalite. By adjusting of the composition of mullite and glass phase, mullite-glass ceramics with low dielectric constant (5.9), thermal expansion coefficient (3.5×10−6/°C) close to that of silicon chips, and high bending strength (210MPa) have been developed. These substrates made of mullite-glass ceramics are suitable for mounting silicon devices of computer processors.
