An effective strategy for the preparation of intrinsic low-k and ultralow-loss dielectric polysiloxanes at high frequency by introducing trifluoromethyl groups into the polymers

2020 ◽  
Vol 11 (38) ◽  
pp. 6163-6170
Author(s):  
Fengping Liu ◽  
Xingrong Chen ◽  
Linxuan Fang ◽  
Jing Sun ◽  
Qiang Fang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Effective Strategy ◽  
Low Dielectric ◽  
5 Ghz ◽  
Low K ◽  
Trifluoromethyl Groups

Two new CF3-containing polysiloxanes with low dielectric constant (Dk) and dielectric loss (Df ) at a high frequency of 5 GHz were reported. The sample with two −CF3 groups exhibits better dielectric properties with Dk of 2.53 and ultralow Df of 1.66 × 10−3.

Photosensitive Polyimide having low loss tangent for RF application

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada
Keyword(s):  
Molecular Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Elongation At Break ◽  
Low Dielectric ◽  
The Poor

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.

Influence of MgO Content on Microstructure and Dielectric Properties in (BaSr)TiO3 Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 85-88
Author(s):  
Lin Hu ◽  
He Ping Zhou ◽  
Hao Xue ◽  
Chun Lai Xu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Low Dielectric Constant ◽  
Microwave Technology ◽  
Phased Array Antennas ◽  
Strontium Titanium Oxide ◽  
Low Dielectric ◽  
Barium Strontium ◽  
High Dielectric

Barium strontium titanium oxide (BSTO) has great advantages and potentiality for the application of microwave technology. In order to be used in phased array antennas, high dielectric tunability, relatively low dielectric constant and low dielectric loss are required. In this paper, MgO was mixed into BSTO and the microstructure and dielectric properties of MgO-mixed BSTO bulk ceramics were investigated. The mole ratio of Ba and Sr was rather fixed to 5:5 in this study. It is observed that a small amount of MgO (5 wt%) has gone beyond the solubility limits of Mg in BSTO. The dielectric constant and dielectric loss of BSTO ceramics decreased with the increase of the content of MgO mixed. However, the tunability of MgO-mixed BSTO ceramics decreased at the same time. 20wt% MgO-mixed BSTO ceramics exhibits preferable dielectric properties with acceptable tunability.

Preparation and unique dielectric properties of nanoporous materials with well-controlled closed-nanopores

2016 ◽  
Vol 18 (28) ◽  
pp. 19183-19193 ◽  
Author(s):  
Cuijiao Zhao ◽  
Xiaonan Wei ◽  
Yawen Huang ◽  
Jiajun Ma ◽  
Ke Cao ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Porous Structure ◽  
Barrier Properties ◽  
Nanoporous Materials ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
High Dielectric Loss ◽  
High Dielectric

Although general porous materials have a low dielectric constant, their uncontrollable opened porous structure results in high dielectric loss and poor barrier properties, thus limiting their application as interconnect dielectrics.

Sintering and Properties of CaO-Al2O3-B2O3-SiO2 System Glass Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 131-134
Author(s):  
Shao Hong Wang ◽  
He Ping Zhou ◽  
Ke Xin Chen ◽  
Xiao Shan Ning
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Glass Ceramics ◽  
Xrd Analysis ◽  
Low Dielectric Constant ◽  
Preparation Technology ◽  
Low Dielectric ◽  
Sintering Properties ◽  
Sintering Characteristics

Preparation technology and sintering characteristics of the CaO-Al2O3-B2O3-SiO2 system glass ceramics were investigated. Results showed that the glass ceramics of this system could be sintered at 850oC; the material has fine sintering properties, outstanding dielectric properties including low dielectric constant (about 4.85, 1GHz) and low dielectric loss (about 0.1%, 1GHz). XRD analysis indicated that the crystalline phases in the sintered body are mainly Al5(BO3)O6, a trace amount of SiO2 and CaSiO3.

Dielectric Properties of Na2O Doped Cao-B2O3-SiO2 System Glass-Ceramics

2013 ◽  
Vol 750-752 ◽  
pp. 492-496
Author(s):  
Peng Fei Wei
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Sintering Temperature ◽  
Glass Ceramics ◽  
Wide Frequency Range ◽  
Microwave Properties ◽  
Low Dielectric Constant ◽  
Frequency Range ◽  
Low Dielectric

The behavior of dielectric and microwave properties against sintering temperature was been carried out on CaO-B2O3-SiO2glass-ceramics with Na2O addition by XRD and SEM. The results show that 0.5 wt.% Na2O addition is advantageous to improve the dielectric and microwave properties due to increasing the major crystalline CaSiO3. With further increasing Na2O content, α-SiO2is the predominant crystalline phase instead of CaSiO3. The CBS glass-ceramics with 0.5 wt.% Na2O sintered at 875°C has a bulk density of 2.51g·cm-3, and which possesses good dielectric properties:εr=6.2,tanδ=1.9×10-3(10 MHz) and low dielectric constant below 2×10-3over a wide frequency range. The proposed dielectrics can find applications in microwave devices, which require low dielectric loss and low dielectric constant.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Novel soluble polyimides containing pyridine and fluorinated units: preparation, characterization, and optical and dielectric properties

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21662-21671 ◽  
Author(s):  
Weibing Dong ◽  
Yue Guan ◽  
Dejing Shang
Keyword(s):  
Dielectric Constant ◽  
Thermal Properties ◽  
Dielectric Properties ◽  
Low Dielectric Constant ◽  
Mechanical And Thermal Properties ◽  
Polyimide Films ◽  
Low Dielectric

To acquire low dielectric constant polyimide films with good mechanical and thermal properties and low CTE applied in microelectronic fields, three novel polyimides containing pyridine and –C(CF3)2– groups were firstly designed and synthesized.

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