Phase Evolutions in the Metallic Precursors of the Ternary Copper-Indium-Gallium System

2013 ◽  
Vol 774-776 ◽  
pp. 974-980
Author(s):  
Jian Wang ◽  
Jie Zhu
Keyword(s):  
Surface Morphology ◽  
Room Temperature ◽  
Intermetallic Phase ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Copper Indium ◽  
Rich Condition ◽  
Indium Gallium ◽  
Copper Indium Gallium

Two types of metallic precursors used for the growth of Cu (In,Ga)Se2were deposited from a single CuInGa ternary target and binary alloy CuGa and CuIn targets, respectively. Phase evolutions in the precursors of the ternary copper-indium-gallium system were investigated over the temperature range from room temperature to 500°C. Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM) were applied to characterize evolution of phases and surface morphology in the precursor layers. With annealing temperatures increased, phase evolutions of Cu9Ga4, Cu11In9, Cu16In9and CuIn were observed. Surface morphology of the two types of precursors changed significantly, which could support the phase evolutions in the ternary Cu-In-Ga system for reactive annealing processes. The existence of the final Cu11In9phase, which is the most favorable intermetallic phase for the formation of CuInSe2and Cu (In,Ga)Se2thin films, may be transformed by a speculated peritectoid reaction of In and Cu16In9to Cu11In9under In-rich condition.

scholarly journals Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography

RSC Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 1878-1882
Author(s):  
Jaemyung Kim ◽  
Okkyun Seo ◽  
Satoshi Hiroi ◽  
Yoshihiro Irokawa ◽  
Toshihide Nabatame ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Grazing Incidence ◽  
Incidence Geometry ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Grazing Incidence Geometry ◽  
Morphology Changes

We investigated the surface morphology changes in a 2 inch-diameter, c-plane, free-standing GaN wafer using X-ray diffraction topography in a grazing-incidence geometry.

Synthesis of Single-Crystal Copper Indium Gallium Diselenide (CIGS) Nanotubes Using AAO Templates

2013 ◽  
Vol 760-762 ◽  
pp. 732-735
Author(s):  
Xiu Chun Guo ◽  
Wen Hui Zhou
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Copper Indium Gallium Diselenide ◽  
General Process ◽  
Single Crystal Copper ◽  
X Ray ◽  
Copper Indium ◽  
Synthesis Strategy ◽  
Indium Gallium ◽  
Copper Indium Gallium

A facile solution method for the synthesis of single-crystal copper indium gallium diselenide (CIGS) nanotubes was developed by using anodic aluminum oxide (AAO) as morphology directing template and triethylenetetramine as both reducing agent and effective chelating agent. The crystal structure, morphology, elemental composition of the as-obtained CIGS nanotubes were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The as-obtained CIGS nanotubes have a diameter about 200 nm and a thickness of 30 nm. The proposed synthesis strategy developed in this work may be used as a general process for other metal chalcogenides nanotubes and may have a bright application prospects in high efficiency, yet low cost photovoltaic areas in the future.

Single-Crystal AU-NI Solid Solutions Grown by MBE

1992 ◽  
Vol 280 ◽  
Author(s):  
A. Marty ◽  
B. Gilles ◽  
G. Patrat ◽  
J. C. Joud ◽  
A. Chamberod
Keyword(s):  
Single Crystal ◽  
Solid Solutions ◽  
Room Temperature ◽  
Large Strain ◽  
Grazing Incidence ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTEpitaxial solid solutions Au1-x Nix (100) have been obtained at room temperature on Au(100) substrates by the MBE technique. The layers are 10 nm-thick and the composition x has been varied up to 0.37. A large strain (2–3%) has been measured by X-ray diffraction. The lattice parameters have been measured in two perpendicular directions, perpendicular and parallel to the surface. In the latest case, the grazing-incidence technique has been used. Because this technique is very sensitive to the surface, the strain results may be re-interpreted if, the upperlOO nm are enriched in Au.

scholarly journals Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films

2013 ◽  
Vol 2013 ◽  
pp. 1-9
Author(s):  
N. P. Subiramaniyam ◽  
P. Thirunavukkarasu ◽  
K. R. Murali
Keyword(s):  
Single Phase ◽  
Gallium Selenide ◽  
Transport Parameters ◽  
X Ray Diffraction ◽  
Copper Indium Gallium Selenide ◽  
Gallium Concentration ◽  
Copper Indium ◽  
Indium Gallium ◽  
First Time ◽  
Copper Indium Gallium

Copper indium gallium selenide (CIGS) films were deposited for the first time by the brush electrodeposition technique. X-ray diffraction studies indicated the formation of single phase chalcopyrite CIGS. Lattice parameters, dislocation density, and strain were calculated. Band gap of the films increased from 1.12 eV to 1.63 eV as the gallium concentration increased. Room temperature transport parameters of the films, namely, resistivity increased from 0.10 ohm cm to 12 ohm cm, mobility decreased from 125 cm2V−1s−1 to 20.9 cm2V−1s−1, and carrier concentration decreased from 4.99 × 1017 cm−3 to 2.49 × 1016 cm−3 as the gallium concentration increased. Photosensitivity of the films increased linearly with intensity of illumination and with increase of applied voltage.

Effect of Intermetallics on Pt-Al Surface Coatings Colour

2014 ◽  
Vol 353 ◽  
pp. 259-262 ◽  
Author(s):  
M. Topic ◽  
Richard P. Vinci ◽  
Zakhelumuzi Khumalo ◽  
C. Mtshali
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Coating Thickness ◽  
Structural Characteristics ◽  
Intermetallic Phase ◽  
Surface Coatings ◽  
X Ray Diffraction ◽  
X Ray

We investigated two coatings, Pt:Al and Pt3:Al, deposited onto pure Al substrates. After annealing at 500°C for 2 hours in vacuum, the Pt:Al coating became “matt silver” while the Pt3:Al colour was “old gold”. Although the deposited coatings were relatively smooth, rope-and ridge-like morphologies were observed in the annealed Pt:Al and Pt3:Al coatings, respectively. X-ray diffraction analyses revealed the presence of Al21Pt6and Al2Pt intermetallics in annealed Pt:Al while only the Al2Pt intermetallic phase was observed in the annealed Pt3:Al coatings. RBS spectra showed an increase of coating thickness by four times in the Pt:Al whilst the coating thickness was doubled in the Pt3:Al coatings. The changes to color, surface morphology, and thickness caused by thermal annealing were attributed to the structural characteristics of the most dominant phases.

X-Ray Diffraction Study of the Phase Transition of the ${\rm Si}(111)(\sqrt{3} \times \sqrt{3})\mbox{-Ag}$ Surface

2003 ◽  
Vol 10 (02n03) ◽  
pp. 519-524 ◽  
Author(s):  
Toshio Takahashi ◽  
Hiroo Tajiri ◽  
Kazushi Sumitani ◽  
Koichi Akimoto ◽  
Hiroshi Sugiyama ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Low Temperatures ◽  
Diffuse Scattering ◽  
Room Temperature ◽  
Bragg Reflection ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Displacive Phase Transition

The structure of the [Formula: see text] surface was studied at both room temperature and a low temperature of 50 K using grazing incidence X-ray diffraction. At low temperatures diffuse scattering was observed in addition to Bragg reflection. Least squares analyses for Bragg reflections using anisotropic Debye–Waller factors show that the structure at 50 K is consistent with an inequivalent triangle (IET) model, while the structure at room temperature is explained by a honeycomb-chained triangle (HCT) model with strong anisotropic Debye–Waller factors. From the temperature dependence of diffuse scattering, the phase transition temperature Tc and critical exponent β were determined to be about 150 K and 0.27. Some Bragg intensities showed discontinuous changes in their first derivatives at Tc. The results favor a displacive phase transition rather than an order–disorder one.

Photoluminescence and Structure of Chemically Etched Si

1991 ◽  
Vol 256 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
T. Y. Hsieh ◽  
J. Sarathy ◽  
C. Tsai ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Morphology ◽  
Chemical Etching ◽  
Room Temperature ◽  
Porous Si ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Time ◽  
Scanning Electron

ABSTRACTWe demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.

Epitaxy of Ni on Si(111) by Ion Beam Assisted Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Ion Beam ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Ion Energies ◽  
Deposition Conditions

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy

Effects of Refraction and Reflection on Analysis of Thin Films by the Grazing-Incidence X-ray Diffraction Method

1989 ◽  
Vol 33 ◽  
pp. 109-120 ◽  
Author(s):  
Toru Takayama ◽  
Yoshiro Matsumoto
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Diffraction Method ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
X Ray ◽  
Evaporation Technique ◽  
Diffraction Peaks ◽  
Angular Shift

AbstractThe grazing-incidence X-ray diffraction (GIXD) method was employed to analyze two-layer thin films, which were the samples of Å lOO Å Au/500Å Cu/Si02(substrate) and 250Å Cu/500Å Au/SiO2(substrate), which were prepared by the evaporation technique under the condition that the SiO2substrate was at room temperature. Diffraction profiles were obtained at various glancing angles ( α ) and the data were analyzed as a function of α. The results were as follows : 1) Diffraction peaks were shifted to larger diffraction angles, because of the refraction of the incident X-ray beam. The angular shift has been approximated by the equation, α - α2- αc2)1/2, where αcis the total ref reflection critical angle of the material. 2) As a result of the correction of angular shift, the stress of the evaporated films was estimated to be null. 3) The broadening of the Cu diffraction peak and the enhancement of the Cu diffraction intensity occurred at angles near αcof Cu, due to the reflection of the X-ray beam at the Cu/Au interface.

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