A PbS/ITO/Glass Based Photoelectrochemical Cell with a Sponge-Like Surface Structure

2014 ◽  
Vol 941-944 ◽  
pp. 627-630
Author(s):  
Zhi Feng Yin ◽  
Peng Wang ◽  
Li Bo Fan ◽  
Zi Fa Chen ◽  
Shuo Lu Xu
Keyword(s):  
Electrode System ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Cell Parameters ◽  
Cubic Phases ◽  
Ito Glass ◽  
Cbd Method ◽  
P Type ◽  
Deposited Films ◽  
Type Conduction

A photoelectrochemical (PEC) cell was made by a conventional three-electrode system. The working electrode was an as-prepared PbS/ITO/glass composite by a chemical bath deposition (CBD) method. The as-deposited films were characterized for structural, morphological, compositional and PEC properties. The X-ray diffraction (XRD) studies reveal that the films are polycrystalline in nature with cubic phases. The surface morphology was determined by scanning electron microscope (SEM) measurements. The film shows p-type conduction mechanism. The PEC cell, with PbS/ITO/glass as a photo cathode and Na2SO4 (0.10 M) solution as an electrolyte, was constructed and investigated for various cell parameters.

A PbS Film Synthesized by Ultrasonic Wave Assisted Chemical Bath Deposition Method and its Application in Photoelectrochemical Cell

2013 ◽  
Vol 820 ◽  
pp. 3-6 ◽  
Author(s):  
Zhong Biao Zhao ◽  
Peng Wang ◽  
Li Bo Fan ◽  
Zi Fa Chen ◽  
Dong Luo Yang
Keyword(s):  
Ultrasonic Wave ◽  
Chemical Bath Deposition ◽  
Conduction Mechanism ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Ito Glass ◽  
Cbd Method ◽  
P Type ◽  
Deposited Films ◽  
Type Conduction

A Lead sulfide (PbS) film synthesized by ultrasonic wave assisted chemical bath deposition (CBD) method. The as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) measurements. The photoelectrochemical (PEC) cell, with PbS/ITO/glass as a photo cathode and Na2SO4 (0.10 M) solution as an electrolyte, was constructed and investigated for PEC properties. The film shows a p-type conduction mechanism.

Growth of Rutile TiO2 Nanorods by Chemical Bath Deposition Method on Silicon Substrate at Different Annealing Temperature

2014 ◽  
Vol 624 ◽  
pp. 129-133 ◽  
Author(s):  
Abbas M. Selman ◽  
Zainuriah Hassan
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Annealing Treatment ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Uv Emission ◽  
Cbd Method ◽  
P Type

Effects of annealing treatment on growth of rutile TiO2nanorods on structural, morphological and optical properties of TiO2nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO2seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO2nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950 °C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO2nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO2demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO2nanorods annealed at 550 °C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO2nanorods with few defects for future optoelectronic nanodevice applications.

Delafossite-CuAlO2 Thin Films Prepared by Thermal Annealing

2011 ◽  
Vol 13 ◽  
pp. 81-86 ◽  
Author(s):  
Hong Ying Chen ◽  
Ming Wei Tsai
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Long Time ◽  
Hot Probe ◽  
Diffraction Patterns ◽  
P Type ◽  
Deposited Films ◽  
Partial Oxygen

Transparent conducting oxides (TCOs) are well known and have been widely used for a long time in optoelectronics industries. The most popular TCOs have n-type characteristics. However p-type material is not well established and examined. The delafossite-CuAlO2 is one of the p-type TCOs. In this paper, amorphous Cu-Al-O films were deposited onto (100) p-type silicon substrate by magnetron sputtering. After that, the films were annealed at 800°C for 2 h in different partial oxygen levels ranging from 5*10-5 to 1 atm with N2, air, and O2. X-ray diffraction patterns showed that as-deposited films were amorphous. In addition, delafossite-CuAlO2 (R m and P63/mmc phase) appeared at 800°C in N2, but monoclinic-CuO and spinel-CuAl2O4 phases existed in air and O2. The formation of delafossite-CuAlO2 phase can be explained with thermodynamics. The optoelectronic properties of delafossite-CuAlO2 films were also measured. The direct optical bandgap was around at 3.3 eV, which is comparable with literature data. The electrical conductivity was obtained to be 6.8*10-3 S/cm. The hot-probe method employed to measure the electrical property of the films, which indicates that delafossite-CuAlO2 films have p-type characteristics.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

scholarly journals Structural and Electrical Specification of ZrO2Nano Thin Film Prepared by PLD

2021 ◽  
Vol 24 (2) ◽  
pp. 27-32
Author(s):  
Suroor H. Taha ◽  
◽  
Thamir A. Jumah ◽  
Keyword(s):  
Thin Film ◽  
Annealing Process ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
Electrical Parameters ◽  
Thin Film Thickness ◽  
X Ray ◽  
P Type ◽  
Deposited Films ◽  
Ac Conduction

Zirconium dioxide was prepared as a thin film by using pulse laser deposition (PLD).Subsequently, the films had been thermally treated by annealing process at temperature 450 oC. The structural and electrical parameters of thin films were investigated. As-deposited films were amorphous and had a large surface density of ablated particles. The Annealing process resulted change the phase from amorphous to polycrystalline. The X-ray diffraction of all these films has a polycrystalline structure with two different phases named tetragonal and monoclinic. Hall measurements indicate that the charge carriers of all these films were p-type. In addition, the Hall coefficient suffers some change with thin film thickness. The AC results measured showed the films have resistance and capacitance properties. The AC conduction is dominated by hole cattier.

scholarly journals Synthesis of Ni-Doped ZnO Nanorod Arrays by Chemical Bath Deposition and Their Application to Nanogenerators

Energies ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2731 ◽  
Author(s):  
Yen-Lin Chu ◽  
Sheng-Joue Young ◽  
Liang-Wen Ji ◽  
Tung-Te Chu ◽  
Po-Hao Chen
Keyword(s):  
Chemical Bath Deposition ◽  
Indium Tin Oxide ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Evaporation Technique ◽  
Doped Zno ◽  
Cbd Method

Nanogenerators (NGs) based on Ni-doped ZnO (NZO) nanorod (NR) arrays were fabricated and explored in this study. The ZnO films were grown on indium tin oxide (ITO) glass substrates, and the NZO NRs were prepared by the chemical bath deposition (CBD) method. The samples were investigated via field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) spectral analysis. The results showed that the growth of NRs presented high-density single crystalline structures and were preferentially oriented in the c-axis direction. The optical characteristics of the NZO NRs were also measured by photoluminescence (PL) spectra. All samples exhibited two different emissions, including ultraviolet (UV) and green emissions. ITO etching paste was used to define patterns, and an electrode of Au film was evaporated onto the ITO glass substrates by the electron beam evaporation technique to assemble the NG device. In summary, ZnO NRs with Ni dopant (5 mM) showed significantly excellent performance in NGs. The optimal measured voltage, current, and power for the fabricated NGs were 0.07 V, 10.5 µA, and 735 nW, respectively.

Characterization of Nanostructured Heterojunction Solar Cells of CdS/Cd2x(CuIn)1-xS2 Grown by Chemical Spray Pyrolysis

2014 ◽  
Vol 925 ◽  
pp. 585-589 ◽  
Author(s):  
Hamid S. Al-Jumaili ◽  
Mohammed Z. Al-Rawi ◽  
Yarub Al-Douri
Keyword(s):  
Spray Pyrolysis ◽  
Film Surface ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Heterojunction Solar Cells ◽  
Optical Absorbance ◽  
Ito Glass ◽  
Chemical Spray ◽  
P Type ◽  
Conversion Efficiencies

A nanostructured heterojunction of CdS/Cd2x(CuIn)1-xS2 with x=0.2 was prepared by chemical spray pyrolysis on ITO/glass substrate at 350 °C. The X-ray diffraction pattern obtained from CdS/Cd2x(CuIn)1-xS2 solar cell confirmed the formation of Cd2x(CuIn)1-xS2 (CCIS), CuInS2, In2S3, and CdS phases, with crystallite size of 16 nm for CCIS and 26 nm for CdS films. The morphology of the film surface was obtained by AFM technique, which produced a greater grain size of 58.3 nm for CdS and 80 nm for CCIS surfaces. Optical absorbance analysis confirmed the composition-controlled electronic transition in the thin film, and the energy band gap was observed to red shift with the increase in the value of x. The electrical properties produced a P-type conductivity of CCIS with two activation energies. I–V characteristic in dark condition produced unsymmetrical heterojunctions, whereas abrupt-type heterojunctions were produced from the C–V curve. The solar energy conversion efficiencies achieved upon illumination of 100 mW/cm2 were 0.35%, 0.5%, 0.9%, and 1.28% for CCIS thicknesses of 610, 800, 910, and 1000 nm, respectively.

Investigation of the thermoelectric properties of the PbTe-SrTe system

2010 ◽  
Vol 1267 ◽  
Author(s):  
Kanishka Biswas ◽  
Jiaqing He ◽  
Qichun Zhang ◽  
Guoyu Wang ◽  
Ctirad Uher ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Secondary Phase ◽  
Positive Sign ◽  
X Ray Diffraction ◽  
Rock Salt Structure ◽  
High Power Factor ◽  
Salt Structure ◽  
Diffraction Patterns ◽  
P Type ◽  
Type Conduction

AbstractPbTe-based materials are promising for efficient heat energy to electricity conversion. We present studies of the thermoelectric properties of the PbTe-SrTe system. X-ray diffraction patterns reveal that all the samples crystallize in the rock salt structure without noticeable secondary phase. Na2Te doping of the PbTe-SrTe materials resulting in a positive sign Hall coefficient indicating p-type conduction. Lattice thermal conductivity is significantly decreased with the insertion of SrTe in PbTe lattice. The ZT ∼ 1.3 of these materials is derived from their very low thermal conductivities and reasonably high power factor at 800 K.

scholarly journals Synthesis and Characterization of CZTS Thin Films by Sol-Gel Method without Sulfurization

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xiaoqi Yu ◽  
Aobo Ren ◽  
Fogen Wang ◽  
Ci Wang ◽  
Jingquan Zhang ◽  
...  
Keyword(s):  
Energy Gap ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Layer By Layer ◽  
Czts Thin Films ◽  
P Type ◽  
Sem Morphology ◽  
Deposited Films ◽  
Type Conduction

One process of layer-by-layer sol-gel deposition without sulfurization was developed. The CZTS films with 1.2 μm and the sulfur ratio of ~48% were prepared and their characteristics were measured. The as-deposited and annealed films are of Kesterite structure. The as-deposited films do not present obvious electric conduction type. However, the annealed 9-LAY-ANN film is p-type conduction and has sheet resistance of 4.08 kΩ/□ and resistivity of 4.896 × 10−1 Ω·cm. The optic energy gap is 1.50 eV for as-deposited films and is 1.46 eV after being annealed. The region deposited by using Lo-Con solution is more compact than that by the Hi-Con solution from SEM morphology images.

Studies on Lead Sulfide (PbS) Semiconducting Thin Films Deposited from Nanoparticles and Its NLO Application

2014 ◽  
Vol 13 (01) ◽  
pp. 1450001 ◽  
Author(s):  
T. S. Shyju ◽  
S. Anandhi ◽  
R. Sivakumar ◽  
R. Gopalakrishnan
Keyword(s):  
Lead Sulfide ◽  
Raman Shift ◽  
Saturable Absorption ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type ◽  
Semiconducting Thin Films ◽  
Deposited Films

Nanoparticle Lead sulfide was synthesized via simple chemical method and deposited on glass substrates at different substrate temperatures by thermal evaporation technique. The synthesized nanoparticle PbS was analyzed and confirmed by X-ray diffraction (XRD), Scanning electron microscopy SEM with EDX and thermogravimetry. The structural, optical, morphological and electrical properties of the deposited films were studied using XRD, UV-Vis, Raman, SEM with EDX, atomicforce microscopy AFM and Hall Effect measurements. The thickness of the deposited samples was measured using thickness profilometer. The Raman shift in the peak occurs toward lower energy with increasing substrate temperature deposited lead sulfide. The Z-scan study with open aperture was carried out at 532 nm using 5 ns laser pulse on the deposited films which shows that nonlinear absorption arises from saturable absorption process. The deposited PbS film exhibits p-type conductivity in Hall measurement.

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