scholarly journals Effect of Different Deposition Power of In2O3Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Shang-Chao Hung ◽  
Kin-Tak Lam ◽  
Cheng-Fu Yang ◽  
Yu-Jhen Liou
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Transparent Electrode ◽  
Amorphous Structure ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Deposition Power ◽  
Sputtering System

The (In, Ga, Zn)Ox(IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5(Ga2O3-2 ZnO, GZO) and In2O3ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap(Eg)values of the IGZO thin film were evaluated from the plots of(αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3target would have a large effect on mobility andEgvalue of the IGZO thin films.

A next generation TCO Material for display systems: Molybdenum doped Indium oxide thin films

2006 ◽  
Vol 936 ◽  
Author(s):  
E. Elangovan ◽  
A Marques ◽  
R Martins ◽  
E Fortunato
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Sputtering Power ◽  
Spectra Properties ◽  
Display Systems

ABSTRACTThin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40 – 180 W) and sputtering time (ranging 2.5 – 20 min). Thickness of the films found varied between 50 – 400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10−3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm−3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V−1 s−1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90 % (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27 % for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

The Characteristics of Multilayer Thin Films Deposited with Metal Thin Films (Ag, Al, Cu)

2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Particles ◽  
Zno Thin Films ◽  
Multilayer Thin Films ◽  
Electrical And Optical Properties ◽  
Metal Thin Films ◽  
Continuous Structure ◽  
Glass Substrates ◽  
The Difference ◽  
Sputtering System

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.

CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 667-670 ◽  
Author(s):  
Y. RODRÍGUEZ-LAZCANO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Band Gap ◽  
Deposition Method ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Ternary Compounds ◽  
Glass Substrates ◽  
Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

The Growth of Transparent Conductive Al-Doped ZnO Thin Films at Room Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 211-214
Author(s):  
Sang Moo Park ◽  
Takashi Tomemori ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Flexible Display ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Flexible Solar Cell ◽  
Doped Zno

High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth condition in terms of oxygen pressure. The structure and electrical and optical properties of the as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83% was obtained. The present results suggest that optimized AZO films should be very useful and effective for flexible display, top emission type of OLEDs and for various other kinds of optoelectronic devices such as flexible solar cell or passive photo device.

EFFECT OF THICKNESS ON THE PROPERTIES OF In-DOPED ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (07) ◽  
pp. 995-1003 ◽  
Author(s):  
L. P. PENG ◽  
L. FANG ◽  
X. F. YANG ◽  
Q. L. HUANG ◽  
F. WU ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Visible Range ◽  
Electrical And Optical Properties ◽  
Glass Substrates

In-doped zinc oxide ( ZnO:In ) thin films with thickness from 157 nm to 592 nm have been deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effect of the film thickness on the structural, electrical and optical properties of ZnO:In thin films has been investigated. It is found that the films are hexagonal wurtzite structure with c-axis perpendicular to the substrate, and with increasing thickness, the crystallinity, the grains size and the conductivity of the films increases, but the strains along c-axis and the transmittance decrease. The decrease of the resistivity in a thicker film is attributed to the slight increase of the carrier concentration and the significant increase of Hall mobility. The transmittance of all the films is over 80% in the visible region (400–800 nm) and the band gap decrease with the increase of film thickness. The film with the thickness of around 303 nm has the resistivity of 6.07 × 10-3 Ω⋅ cm and the transmittance of 90% in the visible range. Based on the good conductivity and high transmittance, the ZnO:In films prepared by magnetron sputtering can be regarded as a potential transparent electrode.

Molybdenum doped Indium Oxide thin films prepared by rf sputtering

2005 ◽  
Vol 905 ◽  
Author(s):  
Elamurugu Elangovan ◽  
Antonio Marques ◽  
Ana Pimentel ◽  
Rodrigo Martins ◽  
Elvira Fortunato
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Indium Oxide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Rf Sputtering ◽  
Electrical And Optical Properties ◽  
Volume Percentage ◽  
Annealing Conditions ◽  
Deposited Films

AbstractMolybdenum doped indium oxide (IMO) thin films rf sputtered at room temperature were studied as a function of oxygen volume percentage (O2 vol. %) varied between 0 and 17.5. The as-deposited films were amorphous irrespective of O2 vol. %. The minimum transmittance (<10 %) of the films deposited without oxygen has been increased on introducing oxygen (3.5 O2 vol. %) to a maximum of 90 %. The optical band gap has been increased from 3.80 eV (without oxygen) to 3.92 eV (3.5 O2 vol. %). The films were highly resistive and the hall coefficients were detectable only for the films deposited without oxygen. In order to increase the electrical conductivity, the films were annealed in the range 100-500°C in open-air and N2/H2 gas for 1 hour. The annealed films become polycrystalline with enhanced electrical and optical properties. The effect of annealing conditions on these films will be presented and discussed in detail.

Microstructure and Magnetic Properties of the CoTiO2 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 661-664
Author(s):  
Li Yun Jia ◽  
Jia Ling Xu ◽  
Jiao Qu
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
The Other ◽  
Homogeneous Structure ◽  
Ferromagnetic Properties ◽  
Glass Substrates ◽  
Island Type ◽  
Microstructure And Magnetic Properties ◽  
Sputtering System

Co (t nm)/TiO2(200 nm) films were prepared by DC facing-target magnetron reactive sputtering system onto glass substrates at room temperature. The influence of the Co distribution on microstructure and magnetic properties of films was investigated in detail. The results indicate that CoTiO2thin films with t= 2 nm island-type deposited showed a homogeneous structure, and pure ferromagnetic properties of thin films are only attributed to the CoTiO2phases. On the other hand, in case of thin films above t= 2nm, the overall ferromagnetic properties depended on both CoTiO2and CoTi phases.

Some studies on Molybdenum doped Indium oxide thin films rf sputtered at room temperature

2006 ◽  
Vol 928 ◽  
Author(s):  
E. Elangovan ◽  
P Barquinha ◽  
A Pimental ◽  
A. S. Viana ◽  
R Martins ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Indium Oxide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
Volume Percentage ◽  
Transmittance Spectra ◽  
X Ray ◽  
Glass Substrates

ABSTRACTThin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0 % in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0 %. The transmittance spectra were found to be in the range of 77 to 89 %. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26 × 10−3 to 4.08 × 10−1 Ω−cm for the increase in OVP from 1.4 to 4.1 %, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm.

Effect of Annealing on the Structural Electrical and Optical Properties of CdSe Thin Films

2018 ◽  
Vol 24 (8) ◽  
pp. 5700-5702
Author(s):  
T. C. M Santhosh ◽  
Kasturi V Bangera ◽  
G. K Shivakumar
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
Hexagonal Structure ◽  
Annealing Duration ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Post Deposition ◽  
Absorption Measurements

CdSe thin films have been deposited on glass substrates at 453 K and subjected to post-deposition annealing. The effect of annealing on the properties of thermally evaporated CdSe thin films has been studied in detail. Structural and compositional studies have been carried out using X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive analysis of X-ray (EDX) techniques. It is observed that as-deposited CdSe as well as annealed CdSe thin films exhibits hexagonal structure. The grain size was found to increase marginally with an increase in the annealing duration. The optical band gap of the grown films was evaluated from absorption measurements found to be 1.67 eV. An improvement in photoconductivity has been observed for annealed films.

ON THE STRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES OF TiO2 SPUTTERED THIN FILMS

2006 ◽  
Vol 13 (01) ◽  
pp. 87-92 ◽  
Author(s):  
A. ASHOUR
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Lattice Constants ◽  
Glass Substrates ◽  
Deposited Films

Titanium oxide thin films were prepared by sputtering technique onto glass substrates at room temperature (RT). The structure of the films was confirmed using X-ray diffraction (XRD) and revealed the stoichiometry with an O and Ti ratio of 2. The deposited films at RT were found to be amorphous and the films annealed at 300 and 400°C for 2 h were crystalline with orthorhombic structure. The lattice constants and grain size of the film are calculated. The electrical resistivity was found to depend on the film thickness and decreased with increasing the film thicknesses. The optical constants of the films such as the refractive index, extinction coefficient, and absorption coefficient were also determined using the optical transmittance measurements, and the results were discussed. The optical band gap varies from 3.2 to 3.5 eV as a function of oxygen/argon ratios.

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