Charge Transport Mechanism and the Effects of Device Temperature on Electrical Parameters of Au/ZnPc/N-Si Structures

2010 ◽  
Vol 442 ◽  
pp. 372-380 ◽  
Author(s):  
A. Hussain ◽  
P. Akhter ◽  
A.S. Bhatti
Keyword(s):  
Data Analysis ◽  
Charge Transport ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Conduction Mechanism ◽  
Series Resistance ◽  
Zinc Phthalocyanine ◽  
Dominant Conduction Mechanism ◽  
Diode Ideality Factor

Gold/Zinc Phthalocyanine/n-Si metal semiconductor contact with organic interfacial layer have been developed and characterized by Current–Voltage-Temperature (I-V-T) measurements, to study its junction and charge transport properties. The junction parameters, of diode ideality factor (n), barrier height (b) and series resistance (R¬S), of the device are found to shift with device temperature. The barrier height and the diode ideality factor are found to increase and the series resistance is found to decrease with increasing device temperature. The activation energy of the charge carriers is found to be 44 meV and the peak of interface state energy distribution curves is found to shift in terms of Ess-Ev value from 0.582 eV to 0.776 eV with increasing device temperature. The data analysis implies that the Fermi level of the organic interfacial layer shifts as function of device temperature by 100 meV in the device temperature range of 283K to 343K. In terms of dominant conduction mechanism, the I-V-T data analysis confirms the fit of data to the relationship log (IV4)  V1/2 for higher device temperatures and the Poole-Frenkel type is found to be the dominant conduction mechanism for the hybrid device.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

Gaussian distribution of Schottky barrier heights on SnO2 nanowires

2011 ◽  
Vol 1406 ◽  
Author(s):  
Cleber A. Amorim ◽  
Olivia M. Berengue ◽  
Luana Araújo ◽  
Edson R. Leite ◽  
Adenilson J. Chiquito
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Small Deviation ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Sno2 Nanowires ◽  
Different Temperatures

ABSTRACTIn this work, we studied metal/SnO2 junctions using transport properties. Parameters such as barrier height, ideality factor and series resistance were estimated at different temperatures. Schottky barrier height showed a small deviation of the theoretical value mainly because the barrier was considered fixed as described by ideal thermionic emission-diffusion model. These deviations have been explained by assuming the presence of barrier height inhomogeneities. Such assumption can also explain the high ideality factor as well as the Schottky barrier height and ideality factor dependence on temperature.

PERFORMANCE COMPARISON OF p–n JUNCTION DIODES USING ZINC OXIDE AND COPPER PHTHALOCYANINE HYBRID NANOCOMPOSITES AND BILAYER HETEROSTRUCTURES

NANO ◽  
2014 ◽  
Vol 09 (06) ◽  
pp. 1450062 ◽  
Author(s):  
N. PADMA ◽  
MANORANJAN GHOSH ◽  
SHASHWATI SEN ◽  
R. TEWARI
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Nanocomposite Film ◽  
Copper Phthalocyanine ◽  
Series Resistance ◽  
Hybrid Nanocomposites ◽  
Nanocomposite Films ◽  
Heterojunction Devices

Nanocomposites of n-type Zinc Oxide ( ZnO ) and p-type copper phthalocyanine ( CuPc ) were synthesized using solution route and the electrical properties of heterojunctions of ZnO and CuPc in the nanocomposite film was studied. For comparison, electrical properties of bilayer heterojunction devices using ZnO nanostructure drop cast film and thermally evaporated CuPc were also studied. Rectification ratio (RR) of about 28 and 5.5 was obtained at 4 V for devices with nanocomposite film and bilayer heterojunctions indicating improved formation of p–n junction characteristics for nanocomposite films. Values of ideality factor, barrier height at the p–n junction interface and series resistance were estimated using different methods like semilog plots, Cheung and Norde's methods. Ideality factor estimated from semilog plots and Cheung's methods were found to be higher than unity indicating deviation from ideal diode behavior. Barrier height estimated from different methods was about 0.7 eV. Series resistance measured using Cheung and Norde's methods were found to be about 92 KΩ and 21 KΩ, respectively. Bilayer heterojunction devices exhibited much higher series resistance, ideality factor and barrier height as estimated using all the above-mentioned methods as compared to the devices with nanocomposite film. The above results indicate intimate mixing and improved interface between ZnO and CuPc in the in situ synthesized nanocomposite film thereby offering improved p–n junction characteristics.

scholarly journals Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Reşit Özmenteş ◽  
Cabir Temirci
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Reference Sample ◽  
Forward Bias ◽  
Schottky Contact ◽  
Experimental Result ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractIn this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

scholarly journals Negative series resistance and photo-response properties of Au/PPY-MWCNTs composite /TiO2/Al2O3/n-Si/Al photodiode

2021 ◽  
Author(s):  
A. Ashery ◽  
A. E. H. Gaballah ◽  
Emad M. Ahmed
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Systematic Analysis ◽  
High Frequencies ◽  
Structure Response ◽  
Novel Approach ◽  
Photo Response ◽  
The Relationship

Abstract The paper addresses a novel approach concerning the appearance of negative series resistance (Rs) at high frequencies for both temperatures and voltages. Most of the previous studies have focused on the relationship between voltage and current (I - V) to determine the value of Rs using several methods. By measuring capacitance and conductance as a function of voltage, we were able to develop a systematic analysis of series resistance. At high frequencies of 2×107, 107 Hz, Rs has negative values however, at frequency 106Hz it takes both positive and negative values, whilst from (105 - 10) Hz it has positive values. Here in this article, we synthesized Au/PPY-MWCNTs/TiO2/Al2O3/n-Si/Al structure which can be used in a variety of applications such as supercapacitors, and diodes. We investigated the electrical properties such as ideality factor (n), barrier height (фb), series resistance using several approaches such as conventional, Chueng, and Nord methods. The structure has shown rectification with a good response to daylight illumination. The structure response to daylight illumination indicates that photodiodes have the potential to be used as solar detectors.

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor

2009 ◽  
Vol 609 ◽  
pp. 195-199
Author(s):  
A. Keffous ◽  
M. Kechouane ◽  
Tahar Kerdja ◽  
Y. Belkacem ◽  
K. Bourenane ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Gas Sensing ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters ◽  
Porous Sic ◽  
Sic Films

In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC films formed by electrochemical method were investigated by scanning electron microscopy (SEM). The electrical measurements were made at room temperature (295 K) in different ambient. The effect of the porous surface structure was investigated by evaluating electrical parameters such as the ideality factor (n), barrier height (Bp) and series resistance (Rs). The porous layer significantly affects the electrical properties of the Schottky diodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I–V characteristics was found to be dependent on the SiC thickness. For a thinner SiC layer (0.16 µm), the electrical parameters n was found around 1.135, 0.7041 eV for a barrier height and 45  for a series resistance, but for a thicker one (1.6 µm) n, Bp and Rs were 1.368, 0.7756 eV and 130 , respectively. The low value of the series resistance obtained using Cheung’s method clearly indicated the high performance of the Schottky diode for thinner SiC layer. This effect showed the uniformity of the SiC layer. Finally, sensitivity around 66 % and selectivity of the sensors were reached by using the PSC layer at low voltages below 0.5 Volt.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Comparison of Parameter Extraction Techniques for SiC Schottky Diodes

2006 ◽  
Vol 911 ◽  
Author(s):  
Ming Hung Weng ◽  
Alton B. Horsfall ◽  
Nick G. Wright ◽  
Konstantin V. Vassilevski ◽  
Irina P. Nikitina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Parameter Extraction ◽  
Emission Model ◽  
Schottky Barrier Diodes ◽  
Extraction Techniques

AbstractSchottky barrier diodes fabricated on Silicon carbide have been demonstrated as gas sensors for deployment in extreme environments. It has been shown that the interfacial layer formed at the Metal – Semiconductor junction, determines both the sensitivity and the reliability of the device. Hence, accurate knowledge of the thickness and interfacial trap density of this layer is required to make predictions of the behaviour of the sensor in the environment under investigation and to predict its variation with time. Diode parameters, such as the ideality factor, barrier height and series resistance have been extracted from experimental measurements on Palladium Schottky Barrier diodes on 4H SiC, over a range of temperatures. The comparison of the parameters extracted from modified Norde function, Cheung's method and Thermonic Emission model has been performed. The variation in the barrier height obtained is quite marked between the different techniques. The reverse I-V characteristics have been used to extract thickness of the interfacial layer, by fitting to the experimental data using the TEBIL model to extract the value of Dit from ä and the ideality factor, assuming the interfacial layer is stoichiometric SiO2 . This allows a comparison between the effective interfacial layer behaviour for the different parameter extraction techniques and demonstrates that knowledge of this interfacial layer is influenced by the technique selected.

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