Structural Change during the Formation of Directly Bonded Silicon Substrates

2011 ◽  
Vol 470 ◽  
pp. 158-163
Author(s):  
Tetsuji Kato ◽  
Takaya Ueda ◽  
Yuji Ohara ◽  
Jun Kikkawa ◽  
Yoshiaki Nakamura ◽  
...  
Keyword(s):  
Structural Changes ◽  
Semiconductor Device ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Diffusion Annealing ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Characteristic Domain ◽  
Device Technology

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device technology. In the conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and annealing time, which is well correlated with the interfacial SiO2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.

Microscopic Structure of Directly Bonded Silicon Substrates

2011 ◽  
Vol 470 ◽  
pp. 164-170 ◽  
Author(s):  
Tetsuji Kato ◽  
Yuji Ohara ◽  
Takaya Ueda ◽  
Jun Kikkawa ◽  
Yoshiaki Nakamura ◽  
...  
Keyword(s):  
Lattice Spacing ◽  
Diffusion Annealing ◽  
Silicon Substrates ◽  
Microscopic Structure ◽  
Defect Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Before And After ◽  
Local Lattice ◽  
Lattice Planes

Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

Real-space strain mapping of SOI features using microbeam X-ray diffraction

2008 ◽  
Vol 23 (2) ◽  
pp. 106-108
Author(s):  
Conal E. Murray ◽  
S. M. Polvino ◽  
I. C. Noyan ◽  
B. Lai ◽  
Z. Cai
Keyword(s):  
Semiconductor Device ◽  
Complementary Metal Oxide Semiconductor ◽  
Strain Engineering ◽  
Real Space ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Strain Mapping ◽  
Strained Si ◽  
X Ray ◽  
Out Of Plane

Synchrotron-based X-ray microbeam measurements were performed on silicon-on-insulator (SOI) features strained by adjacent shallow-trench isolation (STI). Strain engineering in microelectronic technology represents an important aspect of the enhancement in complementary metal-oxide semiconductor device performance. Because of the complexity of the composite geometry associated with microelectronic circuitry, characterization of the strained Si devices at a submicron resolution is necessary to verify the expected strain distributions. The interaction region of the SOI strain extended the SOI film thickness from the STI edge at least 25 times. Regions of 65-nm-thick SOI less than 3 μm wide exhibited an overlap in the strain fields because of the surrounding STI. Microbeam mapping of arrays containing submicron SOI features and embedded STI structures revealed the largest out-of-plane strains because of the close proximity of superimposed strain distributions induced by the STI.

scholarly journals Complete Ring Artifacts Reduction Procedure for Lab-Based X-ray Nano CT Systems

Sensors ◽  
2021 ◽  
Vol 21 (1) ◽  
pp. 238
Author(s):  
Jakub Šalplachta ◽  
Tomáš Zikmund ◽  
Marek Zemek ◽  
Adam Břínek ◽  
Yoshihiro Takeda ◽  
...  
Keyword(s):  
High Efficiency ◽  
Image Inpainting ◽  
Simulated Data ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Detection Accuracy ◽  
Reduction Procedure ◽  
X Ray ◽  
Artifacts Reduction ◽  
Ct Data

In this article, we introduce a new ring artifacts reduction procedure that combines several ideas from existing methods into one complex and robust approach with a goal to overcome their individual weaknesses and limitations. The procedure differentiates two types of ring artifacts according to their cause and character in computed tomography (CT) data. Each type is then addressed separately in the sinogram domain. The novel iterative schemes based on relative total variations (RTV) were integrated to detect the artifacts. The correction process uses the image inpainting, and the intensity deviations smoothing method. The procedure was implemented in scope of lab-based X-ray nano CT with detection systems based on charge-coupled device (CCD) and scientific complementary metal–oxide–semiconductor (sCMOS) technologies. The procedure was then further tested and optimized on the simulated data and the real CT data of selected samples with different compositions. The performance of the procedure was quantitatively evaluated in terms of the artifacts’ detection accuracy, the comparison with existing methods, and the ability to preserve spatial resolution. The results show a high efficiency of ring removal and the preservation of the original sample’s structure.

Structural changes in titanium dioxide nanocrystals during plastic deformation

2005 ◽  
Vol 38 (5) ◽  
pp. 749-756 ◽  
Author(s):  
Ulrich Gesenhues
Keyword(s):  
Structural Changes ◽  
Crystal Size ◽  
Lower Layer ◽  
High Energy ◽  
Primary Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Hall Method ◽  
Means Of Transmission

The polygonization of 200 nm rutile crystals during dry ball-milling at 10gwas monitored in detail by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD). The TEM results showed how to modify the Williamson–Hall method for a successful evaluation of crystal size and microstrain from XRD profiles. Macrostrain development was determined from the minute shift of the most intense reflection. In addition, changes in pycnometrical density were monitored. Accordingly, the primary crystal is disintegrated during milling into a mosaic of 12–35 nm pieces where the grain boundaries induce up to 1.2% microstrain in a lower layer of 6 nm thickness. Macrostrain in the interior of the crystals rises to 0.03%. The pycnometrical density, reflecting the packing density of atoms in the grain boundary, decreases steadily by 1.1%. The results bear relevance to our understanding of plastic flow and the mechanism of phase transitions of metal oxides during high-energy milling.

scholarly journals Structural Evolution in Wet Mechanically Alloyed Co-Fe-(Ta,W)-B Alloys

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 800
Author(s):  
Vladimír Girman ◽  
Maksym Lisnichuk ◽  
Daria Yudina ◽  
Miloš Matvija ◽  
Pavol Sovák ◽  
...  
Keyword(s):  
Structural Changes ◽  
Magnetic Measurements ◽  
Structural Evolution ◽  
High Energy ◽  
Control Agent ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
X Ray ◽  
Transmission Electron ◽  
X Ray Absorption

In the present study, the effect of wet mechanical alloying (MA) on the glass-forming ability (GFA) of Co43Fe20X5.5B31.5 (X = Ta, W) alloys was studied. The structural evolution during MA was investigated using high-energy X-ray diffraction, X-ray absorption spectroscopy, high-resolution transmission electron microscopy and magnetic measurements. Pair distribution function and extended X-ray absorption fine structure spectroscopy were used to characterize local atomic structure at various stages of MA. Besides structural changes, the magnetic properties of both compositions were investigated employing a vibrating sample magnetometer and thermomagnetic measurements. It was shown that using hexane as a process control agent during wet MA resulted in the formation of fully amorphous Co-Fe-Ta-B powder material at a shorter milling time (100 h) as compared to dry MA. It has also been shown that substituting Ta with W effectively suppresses GFA. After 100 h of MA of Co-Fe-W-B mixture, a nanocomposite material consisting of amorphous and nanocrystalline bcc-W phase was synthesized.

Innovative Curriculum on Electronic Materials Processing and Engingeering

2001 ◽  
Vol 684 ◽  
Author(s):  
Jane P. Chang
Keyword(s):  
Semiconductor Manufacturing ◽  
Chemical Engineering ◽  
Materials Science ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Dynamic Environment ◽  
Complementary Metal Oxide Semiconductor ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Solid State Physics

Recognizing that the traditional engineering education training is often inadequate in preparing the students for the challanges presented by this industry's dynamic environment and insufficient to meet the empoyer's criteria in hiring new engineers, a new curriculum on Semiconductor Manufacturing is instituted in the Chemical Engineering Department at UCLA to train the students in various scientific and technologica areas that are pertinenet to the microelectronics industries. This paper describes this new mutidisciplinary curriculum that provides knowledge and skills in semiconductor manufacturing through a series ofcourses that emphasize on the application of fundamenta engineeering disciplines in solid-state physics, materials science of semiconductors, and chemical processing. The curriculum comprises three major components:(1)a comprehensive course curriculum in semiconductor manufacturing; (2) a laboratory for hands-on training in semiconductor device fabrication; (3) design of experiments. The capstone laboratory course is designed to strengthen students’ training in “unit operatins” used in semicounductor manufacturing and allow them to practice engineering principles using the state-of-the-art experimental setup. It comprises the most comprehensive training(seven photolithographic steps and numero0us chemical processes)in fabricating and testing complementary metal-oxide-semiconductor (CMOS) devices. This curriculum is recentyaccredited by the Accreditation Board for Engineering and Technology(ABET).

Size dependent behavior of Fe3O4crystals during electrochemical (de)lithiation: an in situ X-ray diffraction, ex situ X-ray absorption spectroscopy, transmission electron microscopy and theoretical investigation

2017 ◽  
Vol 19 (31) ◽  
pp. 20867-20880 ◽  
Author(s):  
David C. Bock ◽  
Christopher J. Pelliccione ◽  
Wei Zhang ◽  
Janis Timoshenko ◽  
K. W. Knehr ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Size Dependent ◽  
Transmission Electron ◽  
Dependent Behavior ◽  
X Ray Absorption

Crystal and atomic structural changes of Fe3O4upon electrochemical (de)lithiation were determined.

scholarly journals Structural Changes of Mo/ZSM-5 Catalysts During the Methane Dehydroaromatization

2009 ◽  
Vol 12 (1) ◽  
pp. 9 ◽  
Author(s):  
Z.R. Ismagilov ◽  
E.V. Matus ◽  
I.Z. Ismagilov ◽  
M.A. Kerzhentsev ◽  
V.I. Zailovskii ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Changes ◽  
Atomic Ratio ◽  
X Ray ◽  
Reducing Atmosphere ◽  
Structure Changes ◽  
Transmission Electron ◽  
Methane Dehydroaromatization ◽  
Naoh Treatment ◽  
Mo Content

<p>The structure changes of Mo/ZSM-5 catalysts with different Mo content (2 and 10 wt. % Mo) and Si/Al atomic ratio (17, 30 and 45) during the methane dehydroaromatization have been investigated by X-ray powder diffractometry, N<sub>2</sub> adsorption and transmission electron microscopy. The treatment of Mo/ZSM-5 catalysts in reducing atmosphere (CH<sub>4</sub> or H<sub>2</sub>) at about 700 °C promotes development of mesoporous system. The pores are open to the exterior of the zeolite grain and have an entrance diameter of ~ 4-10 nm. It is proposed that mesopore formation in Mo/ZSM-5 catalyst is connected with the dealumination of zeolite. The mesopore formation in the parent H-ZSM-5 zeolite by NaOH treatment does not improve the activity of /ZSM-5 catalyst.</p>

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