Microscopic Structure of Directly Bonded Silicon Substrates

2011 ◽  
Vol 470 ◽  
pp. 164-170 ◽  
Author(s):  
Tetsuji Kato ◽  
Yuji Ohara ◽  
Takaya Ueda ◽  
Jun Kikkawa ◽  
Yoshiaki Nakamura ◽  
...  
Keyword(s):  
Lattice Spacing ◽  
Diffusion Annealing ◽  
Silicon Substrates ◽  
Microscopic Structure ◽  
Defect Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Before And After ◽  
Local Lattice ◽  
Lattice Planes

Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of Si(011)/Si(001) direct silicon bonding (DSB) substrates. XRMD was performed to measure the local lattice spacing and tilting in the samples before and after oxide out-diffusion annealing. Diffraction analyses for (022) lattice planes with two orthogonal in-plane directions of X-ray incidence revealed anisotropic domain textures in the Si(011) layer. Such anisotropy was also confirmed by TEM in the morphology at the Si(011)/Si(001) bonded interface. The anisotropic crystallinity is discussed on the basis of interfacial defect structures which are proper to the DSB substrate.

Structural Change during the Formation of Directly Bonded Silicon Substrates

2011 ◽  
Vol 470 ◽  
pp. 158-163
Author(s):  
Tetsuji Kato ◽  
Takaya Ueda ◽  
Yuji Ohara ◽  
Jun Kikkawa ◽  
Yoshiaki Nakamura ◽  
...  
Keyword(s):  
Structural Changes ◽  
Semiconductor Device ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Diffusion Annealing ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Characteristic Domain ◽  
Device Technology

The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device technology. In the conventional bonding process, it is necessary to remove interfacial SiO2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and annealing time, which is well correlated with the interfacial SiO2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 267-272 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Formation ◽  
Grazing Incidence ◽  
Microscopic Structure ◽  
Threading Dislocation ◽  
Simultaneous Generation ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Electron

Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Effects of Plasma Surface Treatment on the Self-forming Barrier Process in Porous SiOCH

2008 ◽  
Vol 1079 ◽  
Author(s):  
Junichi Koike ◽  
Junichi Koike ◽  
Zsolt Tökei
Keyword(s):  
Cross Section ◽  
Deposition Process ◽  
Plasma Damage ◽  
X Ray ◽  
Transmission Electron ◽  
Plasma Surface Treatment ◽  
Diffusion Barrier Layer ◽  
Before And After ◽  
Low K ◽  
Secondary Ion

ABSTRACTSelf-forming barrier process was carried out on a porous low-k material with the Cu-Mn alloys. The effects of various surface treatments were investigated in the sample having a pore size of 0.9 nm and a porosity of 25%. Before and after annealing, samples were analyzed in cross section with transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Concentration profile was also analyzed with time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The results indicated the penetration of Cu into the low-k interior during deposition, followed by the segregation of Cu at the low-k/Si interface during subsequent annealing. Although a diffusion barrier layer was formed and no further Cu penetration was not observed during annealing, initial Cu penetration in the deposition process was detrimental and should be prevented by restoring the plasma damage on the low-k surface.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Microstructural analysis of high-pressure compressed C60

2001 ◽  
Vol 16 (7) ◽  
pp. 1960-1966 ◽  
Author(s):  
K. Miyazawa ◽  
H. Satsuki ◽  
M. Kuwabara ◽  
M. Akaishi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Pressure ◽  
High Resolution ◽  
Microstructural Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Hardness Tests ◽  
Lattice Planes

The structure and hardness of C60 bulk specimens compressed under 5.5 GPa at room temperature to 600 °C are investigated by high-resolution transmission electron microscopy, x-ray diffraction, and micro-Vickers hardness tests. A strong accumulation of the [1 1 0]tr orientation of high-pressure-treated C60 specimens was developed along the compression axis, and stacking faults and nano-sized deformation twins were introduced into the C60 specimens compressed at 450–600 °C. Curved lattice planes indicating a polymerization of C60 were observed by high resolution transmission electron microscopy (HRTEM). The polymerization of the high-pressure-compressed C60 is also supported by the computer simulation of HRTEM images.

Characterization of Ni-P and Ni-P-Al2O3 Heat Treated Layers

2017 ◽  
Vol 1143 ◽  
pp. 26-31
Author(s):  
Lucica Balint ◽  
Gina Genoveva Istrate
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Corrosion Resistance ◽  
Composite Coatings ◽  
Treatment Temperature ◽  
Initial State ◽  
X Ray ◽  
Transmission Electron ◽  
Heat Treated ◽  
Before And After

Research has shown the relationship among hardness, usage and corrosion resistance Ni-P-Al2O3 composite coatings on steel support heat treated. The electroless strips were heat treated at 200°C, 300°C, 400°C, 500°C and 600°C. Further studies on corrosion, hardness and usage revealed changes in properties, compared to the initial state, both on the strips coated with Ni-P and the ones coated with Ni-P-Al2O3 composite. The samples have been studied before and after the heat treatment via Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Energy Dispersive X-ray Analysis (EDX) and X-Ray Diffraction (XRD). The results show that untreated Ni-P layers exhibit strong corrosion resistance, while hardness and usage increase with heat treatment temperature, with a peak at 400 °C. Using suspended particles co-deposition, led to new types of layers, some with excellent hardness and usage properties. Corrosion resistance increase with heat treatment. Coating layers can be adjusted to the desired characteristics, by selecting proper parameters for the expected specific results.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Growth of ZnO Nanostructures at Different Temperatures without Catalyst by Wet Thermal Oxidation Process

2012 ◽  
Vol 620 ◽  
pp. 132-136 ◽  
Author(s):  
Hind I. Abdulgafour ◽  
Yushamdan Yusof ◽  
F.K. Yam ◽  
Hassan Zainuriah
Keyword(s):  
Oxidation Process ◽  
Zinc Powder ◽  
Silicon Substrates ◽  
Zno Nanostructures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Wide Range ◽  
Different Temperatures ◽  
Evaporation Technique

In this study, an efficient method to achieve a wide range of high-quality zinc oxide (ZnO) nanostructures through zinc powder evaporation at different temperatures is developed. ZnO nanostructures could be synthesized on n-type silicon substrates by a simple thermal evaporation technique without a catalyst at 600°C, 700°C, 800°C, and 900°C. Samples are annealed in wet oxygen and ambient argon gases. Surface morphology, crystallinity, and optical properties of the ZnO nanostructures are examined by scanning electron microscopy and transmission electron microscope measurements, X-ray diffraction, and photoluminescence measurement.

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