Influence of pH Value on the Phases, Morphologies and Optical Properties of Sm2S3 Thin Films

2012 ◽  
Vol 512-515 ◽  
pp. 368-371
Author(s):  
Yan Chao Hou ◽  
Jian Feng Huang ◽  
Li Yun Cao ◽  
Jian Peng Wu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ph Value ◽  
Visible Spectrum ◽  
X Ray Diffraction ◽  
Solution Ph ◽  
Oriented Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

Sm2S3 thin films were prepared on Si (100) substrates by liquid phase self–assemble method. The influences of solution pH value on the phases, surface morphologies and optical properties of the as deposited films were investigated. The as–deposited Sm2S3 thin films were characterized by X–ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet-visible (UV–Vis). Results indicate that Sm2S3 thin film with oriented growth along (105) direction can be obtained at pH value of 3.0, deposition temperature of 80 °C, following deposition for 24 h. The grain sizes of the Sm2S3 first increase and then decrease with increasing pH value. The as–deposited thin films exhibit a dense and crystallinized surface morphology. The film shows good transmittance in visible spectrum and excellent absorbency of ultraviolet light, and the bandgap of the thin films at pH of 3.0 is calculated to be 4.06 eV.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Electroplated CuO Thin Films from High Alkaline Solutions

2011 ◽  
Vol 15 (1) ◽  
pp. 49-55
Author(s):  
V. Dhanasekaran ◽  
T. Mahalingam ◽  
S. Rajendran ◽  
Jin Koo Rhee ◽  
D. Eapen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Structural Characteristics ◽  
Band Gap Energy ◽  
Alkaline Solutions ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Microstructural Parameters ◽  
Atomic Force

CuO thin films were coated on ITO substrates by an electrodeposition route through potentiostatic mode. The electrodeposited CuO thin films were characterized and the role of copper sulphate concentration on the structural, morphological and optical properties of the CuO films was studied. Film thickness was measured by a stylus profilometer and found to be in the range between 800 and 1400 nm. The structural characteristics studies were carried out using X-ray diffraction and found that the films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. The estimated microstructural parameters revealed that the crystallite size increases whereas the number of crystallites per unit area decreases with increasing film thickness. SEM studies show that the grain sizes of CuO thin films vary between 100 and 150 nm and also morphologies revealed that the electrodeposited CuO exhibits uniformity in size and shape. The surface roughness is estimated 15 nm of the CuO film were studied by atomic force microscopy. Optical properties of the films were analyzed from absorption and transmittance studies. The optical band gap energy was determined to be 1.5 eV from absorption coefficient. The variation of refractive index (n), extinction coefficient (k), with wavelength was studied and the results are discussed.

EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL AND THE OPTICAL PROPERTIES OF CdTe (100) EPITAXIAL FILMS GROWN ON GaAs (100) SUBSTRATES

2007 ◽  
Vol 14 (04) ◽  
pp. 755-759 ◽  
Author(s):  
D. U. LEE ◽  
J. H. JUNG ◽  
T. W. KIM ◽  
H. S. LEE ◽  
H. L. PARK ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cdte Thin Films ◽  
Xrd Patterns

CdTe thin films were grown on GaAs (100) substrates by using molecular beam epitaxy at various temperatures. The results of the X-ray diffraction (XRD) patterns showed that the orientation of the grown CdTe thin films was the (100) orientation. XRD patterns, atomic force microscopy images, high-resolution transmission electron microscopy (HRTEM) images, and photoluminescence spectra showed that the crystallinity of CdTe (100) epilayers grown on GaAs (100) substrates was improved by increasing the substrate temperature. HRTEM images showed that misfit dislocations existed at the CdTe / GaAs heterointerface. These results can help improve understanding of the substrate temperature effect on the structural and the optical properties of CdTe (100)/ GaAs (100) heterostructures.

PREPARATION AND FERROELECTRIC PROPERTIES OF LEAD-FREE A0.5Bi0.5TiO3 (A = Na OR K) THIN FILMS

2011 ◽  
Vol 18 (03n04) ◽  
pp. 121-125 ◽  
Author(s):  
Y. L. DING ◽  
X. H. ZHANG ◽  
C. H. YANG ◽  
X. Y. ZHANG ◽  
H. L. YANG
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Dielectric Constants ◽  
Lead Free ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Surface Morphologies

Both ferroelectric Na0.5Bi0.5TiO3 (NBT) and K0.5Bi0.5TiO3 (KBT) are considered as the best known lead-free materials. In this experiment, we prepared NBT and KBT thin films on Pt/TiO2/SiO2/Si substrates by metalorganic solution deposition. The structural properties and surface morphologies were measured using X-ray diffraction and atomic force microscopy. The NBT and KBT films show higher leakage currents due to the oxygen vacancies in the films. The remanent polarization and coercive field of NBT (KBT) thin film are 9 (5.2) μC/cm2 and 50 (25) kV/cm at an applied electric field of 150 kV/cm. The relative dielectric constants of NBT and KBT are 340 and 316 at 1 MHz, respectively.

Microstructure and Optical Properties of (Zr0.8, Sn0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process

2005 ◽  
Vol 475-479 ◽  
pp. 3693-3696
Author(s):  
Wen Xiu Cheng ◽  
Ai Li Ding ◽  
Ping Sun Qiu
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Indirect Transition ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sol Gel Process ◽  
Surface Morphologies ◽  
Transition Type

Amorphous and crystalline (Zr0.8,Sn0.2)TiO4 （ZST） thin films deposited on Si(100) substrates have been prepared by a sol-gel process. The crystal structure and surface morphologies of the thin films have been studied by X-ray diffraction and atomic force microscopy. The crystalline ZST films on Si(100) substrata with a (111) orientation The refractive index n and extinction coefficient k of the amorphous and crystalline thin films were obtained by spectroscopy ellipsometry as a function of phone energy in the range from 0.7 to 5.4 eV. The absorption edges for amorphous and crystalline ZST are 3.83 and 3.51eV of indirect–transition type respectively.

Characteristics of Cuprous Oxide Thin Films Deposited on Glass and Polyethylene Terephthalate Substrates

2014 ◽  
Vol 895 ◽  
pp. 29-34
Author(s):  
Poh Kok Ooi ◽  
Chin Guan Ching ◽  
Sha Shiong Ng ◽  
Mat Johar Abdullah ◽  
Abu Hassan Haslan ◽  
...  
Keyword(s):  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Cuprous Oxide ◽  
Ultra Violet ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Copper Target ◽  
Atomic Force ◽  
Direct Band ◽  
Surface Morphologies

In this work, cuprous oxide (Cu2O) thin films grown on glass and polyethylene terephthalate (PET) substrates using reactive radio frequency magnetron sputtering system were investigated. Copper target with purity of 99.99% were used while high purity argon-oxygen gases were utilized as sputtering gases. Structural, morphological, and optical properties of the films were investigated by X-ray diffraction (XRD), atomic force microscopy and ultra-violet visible spectrophotometer. From the XRD results, only one single diffraction peak corresponding to cubic Cu2O (111) crystal structure were observed for both substrates. The surface morphologies of the samples were in a form of pillar-like. Root mean square surface roughness for Cu2O on glass and PET substrates were 3.37 nm and 3.20 nm, respectively. The films were highly transparent for wavelength above 600 nm. The Cu2O films have direct band gap values of around 2.56 eV as determined by Taucs method.

Effects of pH Value on the Structures and Optical Properties of Bi2S3 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 397-399
Author(s):  
Jian Feng Huang ◽  
Yan Wang ◽  
Li Yun Cao ◽  
Hui Zhu ◽  
Xie Rong Zeng
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Light Emission ◽  
Ph Value ◽  
Solution Ph ◽  
Oriented Growth ◽  
Cathodic Electrodeposition ◽  
Ph Values ◽  
Effects Of Ph

Bismuth sulfide (Bi2S3) is an important semiconductor material, which has wide applications in thermoelectricity, electronics, photoelectricity and infrared spectroscopy. Bi2S3 thin films have been deposited on ITO substrates through a cathodic electrodeposition approach at room temperature. The as-deposited thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectrum (PL). The effects of solution pH values on the structures and optical properties of the thin films were particularly investigated. Results show that uniform Bi2S3 thin films with oriented growth along (240) direction can be obtained at the solution pH value range from 4.5 to 6.5. The as-prepared thin films exhibit stable blue-green photoluminescence properties under the ultraviolet light excitation at room temperature. With the increase of the solution pH values, the crystallization of the Bi2S3 thin films improves while the grain size of the obtained thin films decreases and the light emission intensity of the thin films decreases.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Sign in / Sign up

Export Citation Format

Share Document