Self-Texture Control of ZnO Films Prepared by Reactive RF Magnetron Sputtering

2014 ◽  
Vol 605 ◽  
pp. 219-222
Author(s):  
Petr Novák ◽  
Pavol Šutta ◽  
M. Netrvalová ◽  
Jan Říha ◽  
Rostislav Medlín
Keyword(s):  
Magnetron Sputtering ◽  
Crystal Surface ◽  
Rf Magnetron Sputtering ◽  
Film Structure ◽  
Acoustic Resonator ◽  
Preferred Orientation ◽  
Zno Films ◽  
Potential Applications ◽  
Horizontal Wave ◽  
Shear Horizontal

Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors or acoustic resonator devices. ZnO normally crystallizes in the wurtzitestructure with c-axis (001) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. This work is focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It is found that preferred orientation can be controlled by substrate bias and substrate temperature during deposition without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by different preferred orientation. Moreover, the film annealing was performed to enhance the film structure.

Preparation and Characterization of Piezoelectric Films of ZnO and AlN by RF Sputtering for RF MEMS Applications

2012 ◽  
Vol 500 ◽  
pp. 84-89 ◽  
Author(s):  
Sudhir Chandra ◽  
Atul Vir Singh
Keyword(s):  
Rf Mems ◽  
Potassium Hydroxide Solution ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Zno Films ◽  
Mems Devices ◽  
Potential Applications ◽  
Piezoelectric Films

In present work, we report preparation and characterization of piezoelectric films of zinc oxide (ZnO) and aluminum nitride (AlN) by RF magnetron sputtering using respective ceramic targets. The effect of ambient gas, substrate temperature, RF power and sputtering pressure has been studied to get highly c-axis oriented films for potential applications in micro-electromechanical systems. The films were characterized by X-ray diffraction technique to identify the crystallographic orientation. It was observed that the film deposited in pure Argon (Ar) ambient were amorphous or weekly crystallized with no preferred (002) orientation. On the other hand, the films prepared in Ar-O2 for ZnO were highly c-axis oriented. Similarly AlN films were observed to be oriented along c-axis perpendicular to substrate only when deposited in mixture of Ar-N2. To demonstrate the application of piezoelectric properties, an FBAR device (Film Bulk Acoustic Resonator) using ZnO thin film was fabricated. ZnO films are very sensitive to the chemicals used in the micro-electro-mechanical systems (MEMS) fabrication processes which include acids, bases and etchants of different material layers (e.g. SiO2, chromium, gold etc.). A specially designed mechanical jig was used for physically protecting the film during Si anisotropic etching process in potassium hydroxide solution. The potential applications of these films in various RF MEMS devices have been discussed.

Effects of substrates roughness on c-axis preferred orientation of ZnO films deposited by rf magnetron sputtering

2001 ◽  
Vol 672 ◽  
Author(s):  
Jae Bin Lee ◽  
Sanghyon Kwack ◽  
Hyeong Joon Kim
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Atomic Force Microscope ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Zno Films ◽  
Atomic Force ◽  
Substrate Surface Roughness

ABSTRACTWe investigated the effect of substrate surface roughness on c-axis preferred orientation of ZnO films deposited by radio frequency (rf) magnetron sputtering. We used as substrates a bare Si(100), evaporated Au/Si(100), evaporated Al/Si(100), and sputtered Al/Si(100), of which rms roughness by atomic force microscope (AFM) were 0.127, 1.71, 2.11, and 6.5∼11.8 nm, respectively. The crystallinity and the c-axis preferred orientation of ZnO films strongly depended on the surface roughness of the used substrates.

Thickness dependence of microstructural evolution of ZnO films deposited by rf magnetron sputtering

1998 ◽  
Vol 13 (5) ◽  
pp. 1260-1265 ◽  
Author(s):  
Yong Eui Lee ◽  
Young Jin Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Microstructural Evolution ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Zno Films ◽  
Orientation Change ◽  
Columnar Grains ◽  
The Relationship

The microstructural evolution, including preferred orientation and surface morphology, of ZnO films deposited by rf magnetron sputtering was investigated with increasing film thickness. Preferred orientation of the ZnO films changed from (0002) → (1011) → (1120) and fine and dense columnar grains also changed to large elongated grains with increasing thickness. Such selective texture growth was explained with an effect of highly energetic species bombardment on the growing film surface. The relationship between preferred orientation change and microstructural evolution was also discussed.

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films

2019 ◽  
Vol 53 (11) ◽  
pp. 1457-1464
Author(s):  
P. N. Krylov ◽  
A. S. Alalykin ◽  
E. A. Durman ◽  
R. M. Zakirova ◽  
I. V. Fedotova
Keyword(s):  
Magnetron Sputtering ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Zno Films

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thin Layer ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Substrate Roughness ◽  
Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

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