Effects of surface roughness of substrates on the c-axis preferred orientation of ZnO films deposited by r.f. magnetron sputtering

2003 ◽  
Vol 423 (2) ◽  
pp. 262-266 ◽  
Author(s):  
Jae Bin Lee ◽  
Sang Hyun Kwak ◽  
Hyeong Joon Kim
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Preferred Orientation ◽  
Zno Films

Effects of substrates roughness on c-axis preferred orientation of ZnO films deposited by rf magnetron sputtering

2001 ◽  
Vol 672 ◽  
Author(s):  
Jae Bin Lee ◽  
Sanghyon Kwack ◽  
Hyeong Joon Kim
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Atomic Force Microscope ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Zno Films ◽  
Atomic Force ◽  
Substrate Surface Roughness

ABSTRACTWe investigated the effect of substrate surface roughness on c-axis preferred orientation of ZnO films deposited by radio frequency (rf) magnetron sputtering. We used as substrates a bare Si(100), evaporated Au/Si(100), evaporated Al/Si(100), and sputtered Al/Si(100), of which rms roughness by atomic force microscope (AFM) were 0.127, 1.71, 2.11, and 6.5∼11.8 nm, respectively. The crystallinity and the c-axis preferred orientation of ZnO films strongly depended on the surface roughness of the used substrates.

Self-Texture Control of ZnO Films Prepared by Reactive RF Magnetron Sputtering

2014 ◽  
Vol 605 ◽  
pp. 219-222
Author(s):  
Petr Novák ◽  
Pavol Šutta ◽  
M. Netrvalová ◽  
Jan Říha ◽  
Rostislav Medlín
Keyword(s):  
Magnetron Sputtering ◽  
Crystal Surface ◽  
Rf Magnetron Sputtering ◽  
Film Structure ◽  
Acoustic Resonator ◽  
Preferred Orientation ◽  
Zno Films ◽  
Potential Applications ◽  
Horizontal Wave ◽  
Shear Horizontal

Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors or acoustic resonator devices. ZnO normally crystallizes in the wurtzitestructure with c-axis (001) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. This work is focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It is found that preferred orientation can be controlled by substrate bias and substrate temperature during deposition without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by different preferred orientation. Moreover, the film annealing was performed to enhance the film structure.

The Optimization of SMR-Based Filter by Thermal Annealing Treatment

2010 ◽  
Vol 654-656 ◽  
pp. 1792-1795
Author(s):  
Ching Liang Wei ◽  
Ying Chung Chen ◽  
Chien Chuan Cheng ◽  
Kuo Sheng Kao ◽  
Chung Jen Chung ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Frequency Response ◽  
Thermal Annealing ◽  
Annealing Treatment ◽  
Lower Surface ◽  
Preferred Orientation ◽  
Bragg Reflector ◽  
Zno Films ◽  
Zno Film ◽  
Thermal Annealing Treatment

In this study, an SMR-based filter was fabricated by dc/rf magnetron sputtering and photolithography, and a thermal annealing treatment was adopted to improve the frequency response. The SMR-based filter is composed of a ZnO piezoelectric thin film onto SiO2/W Bragg reflector. ZnO thin films were prepared by two-step sputtering with various deposition temperatures to obtain good piezoelectric properties. ZnO layers deposited at the temperature of 200 °C exhibit a highly c-axis preferred orientation, good crystalline characteristics and low surface roughness. The filter is thermal treated by a rapid thermal annealing (RTA) technique. The thermal annealing treatment has improved the film properties of ZnO layers, resulting in a higher c-axis preferred orientation and a lower surface roughness of ZnO films than those of as-deposited ZnO films. The atomic ratio of Zn to O in ZnO film approaches one at the annealing temperature of 400 °C, which results in a comparatively oxidized stoichiometric ZnO film. Finally, the frequency response of the annealed filter is improved, and a lower insertion loss is obtained.

Thickness dependence of microstructural evolution of ZnO films deposited by rf magnetron sputtering

1998 ◽  
Vol 13 (5) ◽  
pp. 1260-1265 ◽  
Author(s):  
Yong Eui Lee ◽  
Young Jin Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Microstructural Evolution ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Zno Films ◽  
Orientation Change ◽  
Columnar Grains ◽  
The Relationship

The microstructural evolution, including preferred orientation and surface morphology, of ZnO films deposited by rf magnetron sputtering was investigated with increasing film thickness. Preferred orientation of the ZnO films changed from (0002) → (1011) → (1120) and fine and dense columnar grains also changed to large elongated grains with increasing thickness. Such selective texture growth was explained with an effect of highly energetic species bombardment on the growing film surface. The relationship between preferred orientation change and microstructural evolution was also discussed.

scholarly journals Passivation Effect on ZnO Films by SF6 Plasma Treatment

Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 236 ◽  
Author(s):  
Yumeng Xu ◽  
Baoxue Bo ◽  
Xin Gao ◽  
Zhongliang Qiao
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Reverse Current ◽  
Zno Films ◽  
Current Voltage ◽  
Plasma Passivation ◽  
Heterojunction Diodes

The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds are formed, resulting in the narrowing of band gap. The photoluminescence (PL) intensity of SF6-passivated ZnO films has a 120% increase compared to the untreated samples, and the reduction in defects can increase the resistivity and stability of ZnO films. ZnO films are used in the preparation of ZnO/p-Si heterojunction diodes. The results of the measurement of current voltage (J–V) show that the reverse current is reduced after SF6 plasma passivation, indicating an improvement in the electrical properties of ZnO films.

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure

scholarly journals Low Surface Roughness Graphene Oxide Film Reduced with Aluminum Film Deposited by Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1428
Author(s):  
Xiaowei Fan ◽  
Xuguo Huai ◽  
Jie Wang ◽  
Li-Chao Jing ◽  
Tao Wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electron Transfer ◽  
Graphene Oxide ◽  
Magnetron Sputtering ◽  
Chemical Reduction ◽  
Graphene Film ◽  
Conductivity Measurement ◽  
Electrical Conductivity Measurement ◽  
Vis Spectroscopy ◽  
Hcl Solution

Graphene film has wide applications in optoelectronic and photovoltaic devices. A novel and facile method was reported for the reduction of graphene oxide (GO) film by electron transfer and nascent hydrogen produced between aluminum (Al) film deposited by magnetron sputtering and hydrochloric acid (HCl) solution for only 5 min, significantly shorter than by other chemical reduction methods. The thickness of Al film was controlled utilizing a metal detection sensor. The effect of the thickness of Al film and the concentration of HCl solution during the reduction was explored. The optimal thickness of Al film was obtained by UV-Vis spectroscopy and electrical conductivity measurement of reduced GO film. Atomic force microscope images could show the continuous film clearly, which resulted from the overlap of GO flakes, the film had a relatively flat surface morphology, and the surface roughness reduced from 7.68 to 3.13 nm after the Al reduction. The film sheet resistance can be obviously reduced, and it reached 9.38 kΩ/sq with a high transmittance of 80% (at 550 nm). The mechanism of the GO film reduction by electron transfer and nascent hydrogen during the procedure was also proposed and analyzed.

Control over the preferred orientation of CIGS films deposited by magnetron sputtering using a wetting layer

2016 ◽  
Vol 12 (1) ◽  
pp. 59-66 ◽  
Author(s):  
Yong Yan ◽  
Fan Jiang ◽  
Lian Liu ◽  
Zhou Yu ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Preferred Orientation ◽  
Wetting Layer
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