On the Characterization Method of Nano Boron Nitride Material Based on AFM

2016 ◽  
Vol 680 ◽  
pp. 21-24
Author(s):  
Mei Lin Gao Sun ◽  
Ping Wu ◽  
Hai Jian Li
Keyword(s):  
Boron Nitride ◽  
Plasma Spraying ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Precipitation Method ◽  
Metallic Materials ◽  
Atomic Force ◽  
Submicron Scale ◽  
Surface Nanostructures ◽  
Morphology Characterization

Boron nitride materials have some excellent features, such as high temperature resistance, chemical resistance, good electric performance and radiation resistance . Along with the development of science and technology, boron nitride materials are made into coating widely, put it in the surface of metallic materials or non-metallic materials, can extend their service life significantly[1]. Atomic force microscope (AFM) is widely used for nanoscale morphology characterization and submicron scale structure material, simple sample preparation is its advantage. [2] Based on the domestic boron nitride coating as the research background, using AFM simulate the surface nanostructures of three dimensional, and evaluate the flatness of boron nitride ceramic coating which made by plasma spraying method and chemical vapor phase precipitation method respectively. The results show that the coating prepared with plasma spraying is more dense, surface flatness is smaller, surface roughness uniformity is better.

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

scholarly journals Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Porous Aluminum ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force ◽  
Photothermal Deflection ◽  
Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

Characterization of photosystem II with the atomic-force microscope

1992 ◽  
Vol 50 (2) ◽  
pp. 1146-1147
Author(s):  
Kathleen M. Marr ◽  
Mary K. Lyon
Keyword(s):  
Photosystem Ii ◽  
Atomic Force Microscope ◽  
Three Dimensional ◽  
Biologically Active ◽  
Atomic Force ◽  
Freeze Etching ◽  
Image Averaging ◽  
Oxygen Evolving ◽  
Averaging Techniques

Photosystem II (PSII) is different from all other reaction centers in that it splits water to evolve oxygen and hydrogen ions. This unique ability to evolve oxygen is partly due to three oxygen evolving polypeptides (OEPs) associated with the PSII complex. Freeze etching on grana derived insideout membranes revealed that the OEPs contribute to the observed tetrameric nature of the PSIl particle; when the OEPs are removed, a distinct dimer emerges. Thus, the surface of the PSII complex changes dramatically upon removal of these polypeptides. The atomic force microscope (AFM) is ideal for examining surface topography. The instrument provides a topographical view of individual PSII complexes, giving relatively high resolution three-dimensional information without image averaging techniques. In addition, the use of a fluid cell allows a biologically active sample to be maintained under fully hydrated and physiologically buffered conditions. The OEPs associated with PSII may be sequentially removed, thereby changing the surface of the complex by one polypeptide at a time.

scholarly journals The carbonization of aromatic molecules with three-dimensional structures affords carbon materials with controlled pore sizes at the Ångstrom-level

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Tomoki Ogoshi ◽  
Yuma Sakatsume ◽  
Katsuto Onishi ◽  
Rui Tang ◽  
Kazuma Takahashi ◽  
...  
Keyword(s):  
Porous Carbon ◽  
Carbon Materials ◽  
Carbon Sources ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Thermal Polymerization ◽  
Sodium Ion Battery ◽  
Pore Sizes ◽  
Aromatic Molecules ◽  
Template Methods

AbstractCarbon materials with controlled pore sizes at the nanometer level have been obtained by template methods, chemical vapor desorption, and extraction of metals from carbides. However, to produce porous carbons with controlled pore sizes at the Ångstrom-level, syntheses that are simple, versatile, and reproducible are desired. Here, we report a synthetic method to prepare porous carbon materials with pore sizes that can be precisely controlled at the Ångstrom-level. Heating first induces thermal polymerization of selected three-dimensional aromatic molecules as the carbon sources, further heating results in extremely high carbonization yields (>86%). The porous carbon obtained from a tetrabiphenylmethane structure has a larger pore size (4.40 Å) than those from a spirobifluorene (4.07 Å) or a tetraphenylmethane precursor (4.05 Å). The porous carbon obtained from tetraphenylmethane is applied as an anode material for sodium-ion battery.

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Acoustic subsurface-atomic force microscopy: Three-dimensional imaging at the nanoscale

2021 ◽  
Vol 129 (3) ◽  
pp. 030901
Author(s):  
Hossein J. Sharahi ◽  
Mohsen Janmaleki ◽  
Laurene Tetard ◽  
Seonghwan Kim ◽  
Hamed Sadeghian ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Three Dimensional ◽  
Three Dimensional Imaging ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Fe Containing Templates Derived Atomic Fe-N-C to Boost Fenton-Like Reaction and the Charge Migration Analysis on Highly Active Fe-N4 Sites

2021 ◽  
Author(s):  
Yuan Gao ◽  
Xiaoguang Duan ◽  
Bin Li ◽  
Qianqian Jia ◽  
Yang Li ◽  
...  
Keyword(s):  
Water Pollution ◽  
Vapor Deposition ◽  
Advanced Oxidation Processes ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Charge Migration ◽  
Carbon Nanosheets ◽  
Oxidation Processes ◽  
Highly Active ◽  
Migration Analysis

Persulfate-based advanced oxidation processes are promising technologies to solve water pollution. In this work, single iron atoms are anchored in three-dimensional N-doped carbon nanosheets by a chemical vapor deposition (CVD)...

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