Effect of SnCl4 Concentration on Transparent and Conducting Undoped Tin Oxide Thin Films

2016 ◽  
Vol 690 ◽  
pp. 246-251 ◽  
Author(s):  
S. Tipawan Khlayboonme ◽  
Pitiporn Thanomngam ◽  
Warawoot Thowladda
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Stoichiometric Composition ◽  
Visible Region ◽  
Residual Chlorine ◽  
Oxide Thin Films ◽  
Xps Spectra ◽  
Xrd Patterns ◽  
Substrate Surfaces

The purpose-built pyrolysis system based on an ultrasonically generated aerosol has been successfully used for deposition of highly transparent and conductive undoped tin (IV) oxide thin films. The morphological, structural, optical and electrical properties as well as electronic structures of the films for different concentrations of SnCl4.5H2O used as the starting precursor were investigated. FE-SEM displayed the substrate surfaces were uniformly covered with the film. The film thickness varied with the precursor concentration. XRD patterns showed the deposited films were a tetragonal phase and presented random orientations. The optical transmission spectra of all films revealed highly transmittance in the visible region. Refractive index of the films was between 1.85 and 2.0. XPS spectra for the Sn 3d5/2 and Sn 3d3/2 confirmed that the films were composed of SnO and SnO2 phases. The non-stoichiometric composition decreased with increasing concentration of the precursor. The films deposited with 0.30 M showed the highest conductivity and carrier concentration of 17 W-1cm-1 and 9.5 x 1019 cm-3, respectively. The disagreement of relation between XPS and Hall measurement suggested the higher carrier concentration arose from incorporation of residual chlorine from the solution precursor during deposition into the films. The interstitially incorporated chlorine considerably influenced the electrical properties of the films.

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Annealing effect on structural, optical and electrical properties of pure and Mg doped tin oxide thin films

2013 ◽  
Vol 24 (12) ◽  
pp. 4925-4931
Author(s):  
Syed Mansoor Ali ◽  
Jan Muhammad ◽  
Syed Tajammul Hussain ◽  
Syed Danish Ali ◽  
Naeem Ur Rehman ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Annealing Effect ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Mg Doped

Morphological, optical and electrical properties of samarium oxide thin films

2012 ◽  
Vol 520 (20) ◽  
pp. 6393-6397 ◽  
Author(s):  
Catalin Constantinescu ◽  
Valentin Ion ◽  
Aurelian C. Galca ◽  
Maria Dinescu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Samarium Oxide ◽  
Oxide Thin Films

Structural and electrical properties of lanthanum oxide thin films deposited by laser ablation

2002 ◽  
Vol 197-198 ◽  
pp. 522-526 ◽  
Author(s):  
M.F Vignolo ◽  
S Duhalde ◽  
M Bormioli ◽  
G Quintana ◽  
M Cervera ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lanthanum Oxide ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties

Microstructure and electrical properties of palladium oxide thin films for oxidizing gases detection

2017 ◽  
Vol 636 ◽  
pp. 751-759 ◽  
Author(s):  
S.V. Ryabtsev ◽  
V.M. Ievlev ◽  
A.M. Samoylov ◽  
S.B. Kuschev ◽  
S.A. Soldatenko
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Palladium Oxide ◽  
Oxide Thin Films

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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