Flame made nanoparticles permit processing of dense, flexible, Li+ conducting ceramic electrolyte thin films of cubic-Li7La3Zr2O12 (c-LLZO)

2016 ◽  
Vol 4 (33) ◽  
pp. 12947-12954 ◽  
Author(s):  
Eongyu Yi ◽  
Weimin Wang ◽  
John Kieffer ◽  
Richard M. Laine

Conventional casting–sintering of flame made nanoparticles result in high density and ionic conductivity c-LLZO flexible thin film membranes.

2018 ◽  
Vol 790 ◽  
pp. 3-8 ◽  
Author(s):  
Shin Ichi Furusawa ◽  
Tomosato Ida

Tensile stress was applied to β-AgI thin film prepared on a polyethylene terephthalate film, and the ion conduction response in the direction of the tensile extension was investigated. The ionic conductivity of the β-AgI thin film decreases and the activation energy for ionic conduction increases with increasing extension ratio. This behaviour is attributed to the modulation of the crystal framework by the extension of the AgI thin film.


Author(s):  
Anish Philip ◽  
Yifan Zhou ◽  
Girish Tewari ◽  
Sebastiaan Van Dijken ◽  
Maarit Karppinen

Photo-controlled room-temperature hard magnets could open new horizons for high-density information storage. For this, the material should be fabricated as device-integrable (conformal, stretchable, transparent, etc.) thin films and preferably from...


RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14147-14153 ◽  
Author(s):  
Youngho Kim ◽  
Sang Hoon Lee ◽  
Seyoung Jeong ◽  
Bum Jun Kim ◽  
Jae-Young Choi ◽  
...  

We heat-treated an amorphous large-area WO3 thin film to synthesize high-density, high-quality WO3 nanorods.


2015 ◽  
Vol 7 (2) ◽  
pp. 1823-1828
Author(s):  
Asim Aijaz ◽  
Zaheer Uddin

Hydrogenated amorphous carbon (a-C:H) thin film growth using plasma-assisted deposition is studied using Monte Carlo based simulation. The effect of energetic bombardment of the ionized depositing species as well as ionized buffer gas species on the film growth and the resulting film properties is investigated. The ion energies that assist the a-C:H film growth from low density structures to high density structures such as diamond-like carbon (DLC) are used and the effect of energy and composition of the depositing species on the C-C and C-H bonding and the film structure are analyzed. It is found that the ion bombardment favors the formation of a-C:H films with low H contents, high density and superior mechanical strength of the resulting thin films and is therefore an effective way to tailor-made a-C:H thin film growth for specific applications.


2020 ◽  
Vol 38 ◽  
pp. 47-53
Author(s):  
Shin Ichi Furusawa ◽  
Yuuki Fukuda

β-AgI thin films with thicknesses of 0.09–8.9 µm were prepared on polyethylene terephthalate (PET) substrate. Dependence of ionic conductivity on the thickness of the β-AgI thin film was measured via impedance spectroscopy in the temperature range of 300–330 K. It has been confirmed that the ionic conductivity of the b-AgI thin film is several hundred times higher than the b-AgI bulk. The enhancement of ionic conductivity is considered to be due to the formation of a high ion-conducting region near the hetero-interface region of b-AgI and PET. Furthermore, it has been suggested that the activation energy and carrier density may change depending on the distance from the interface, and the thickness dependence of enhancement in ionic conductivity may be related to the film thickness dependence of crystal orientation and structural disorder of β-AgI thin films.


Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1026
Author(s):  
Young-Hee Joo ◽  
Jae-Hyung Wi ◽  
Woo-Jung Lee ◽  
Yong-Duck Chung ◽  
Dae-Hyung Cho ◽  
...  

Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc’s relationship from transmittance data. The work function of Zn0.6Sn0.4O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6Sn0.4O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells.


MRS Bulletin ◽  
1990 ◽  
Vol 15 (3) ◽  
pp. 36-44 ◽  
Author(s):  
Tomasz Jagielinski

Recording in the 1990s will be high density, high frequency, in-contact recording on high coercivity media. Today's state-of-the-art head materials, NiFe, Sendust and amorphous alloys, will be used in some applications. However, layered structured and artificial superlattices will become the key head technologies of the future. Use of advanced preparation techniques will allow “true” materials engineering and the fabrication of devices to incredibly accurate specifications.These very high density recording systems will require optimal inter-play between all the components—media, head, and head/media interface. Future media will be very smooth, high coercivity, large moment thin films. The head/media spacing will be less than 50 nm, and recording at more than 100 MHz will be required. Single-track heads will be replaced by very narrow track-width multitrack devices in high data rate recorders. Thin film heads will provide the answer to most of the problems of large recording fields and high frequency response. These changes will define new requirements for head materials, some of which cannot be met by currently used materials. Conventional ferrite heads will not be found in high performance recording systems; thin film inductive and magnetoresistive (MR) heads (Figure 1) will be widely used. Thin films, metals and alloys, both crystalline and amorphous, layered structures and artificial superlattices will be the key head technologies in the future. New material preparation technologies, MBE (molecular beam epitaxy), MOCVD (molecular chemical vapor deposition), sputtering, and ion beam deposition are becoming increasingly available and less expensive. These methods will be used to fabricate future devices to incredibly accurate specifications.


Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.


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