Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 814-821 ◽  
Author(s):  
Enea Bianda ◽  
Andrei Mihaila ◽  
Gianpaolo Romano ◽  
Lars Knoll ◽  
Stephan Wirths ◽  
...  
Keyword(s):  
Current Pulse ◽  
Epitaxial Layer ◽  
Stacking Faults ◽  
The Body ◽  
Contributing Factors ◽  
Current Stress ◽  
Forward Current ◽  
Surge Current

The aim of this study is to investigate the main contributing factors to the degradation of the intrinsic body diode in SiC MOSFETs, caused by the expansion of stacking faults (SFs) from the substrate into the epitaxial layer, and how it affects their performance. Additionally, a comparison between DC forward current stress and surge current pulse stress is shown.

Comparison of SiC MOSFET Characteristics Following Body-Diode Forward-Current Stress

2019 ◽  
Vol 963 ◽  
pp. 583-587 ◽  
Author(s):  
Ronald Green ◽  
Aivars Lelis ◽  
Franklin Nouketcha
Keyword(s):  
First Generation ◽  
Stacking Faults ◽  
Charge Trapping ◽  
The Body ◽  
Operating Characteristics ◽  
Power Mosfets ◽  
Current Stress ◽  
Forward Current ◽  
Blocking Voltage ◽  
The One

The effect of forward-current stress of the body diode on the operating characteristics of various commercially-available SiC power MOSFETs was compared. The one set of recent-vintage second-generation 1200-V devices studied showed no degradation at all when the body diode was forward conducted—either in the body diode or the MOSFET characteristics. This is a distinct improvement from first generation 1200-V devices from various suppliers. This degradation phenomenon was consistent with the formation of stacking faults during current stress, which typically reduced MOSFET conductivity, and in some devices increased the Off-state leakage current. Although first-generation 1700-V MOSFET characteristics showed no degradation of the body diode, they did experience a degradation of the blocking voltage due to charge trapping during the stress.

Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics

2020 ◽  
Vol 1004 ◽  
pp. 1027-1032
Author(s):  
Ronald Green ◽  
Aivars J. Lelis ◽  
Franklin L. Nouketcha
Keyword(s):  
Stacking Faults ◽  
Product Line ◽  
The Body ◽  
Pulsed Current ◽  
Forward Voltage ◽  
Power Mosfets ◽  
Current Stress ◽  
Device Processing ◽  
The Stability ◽  
Diode Current

1,200-V and 1,700-V SiC power MOSFETs from multiple suppliers were subject to dc and pulsed-current stress of the body-diode. Three of the five suppliers of 1,200-V devices evaluated showed no significant bipolar degradation, but the other two supplier’s devices showed varying degrees of degradation due this bipolar phenomenon. Electrical results of newly released 1,700-V devices from two suppliers showed significant degradation in the body-diode and MOSFET I-V characteristics following both dc and pulsed-current stress of their body-diodes. The electrical results presented in this work are consistent with basal plane dislocations (BPDs) that form stacking faults during forward conduction of the body-diode. Significant drift in the body-diode forward voltage and MOSFET on-resistance indicates that a much higher BPD density may be present in 1,700-V devices in comparison to the more mature 1,200-V device offerings. The likely presence of BPDs can lead to significant reliability issues in some modern SiC power MOSFETs, and their distribution seems to vary across suppliers and among devices with the same rating and from the same supplier. These differences are likely due to variations in wafer and device processing among suppliers and within a given product line from a single supplier.

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

2014 ◽  
Vol 778-780 ◽  
pp. 951-954 ◽  
Author(s):  
Shigehisa Yamamoto ◽  
Yukiyasu Nakao ◽  
Nobuyuki Tomita ◽  
Shuhei Nakata ◽  
Satoshi Yamakawa
Keyword(s):  
Cost Reduction ◽  
Screening Method ◽  
Stacking Faults ◽  
The Body ◽  
Power Devices ◽  
Electron Hole ◽  
Forward Current ◽  
Voltage Degradation ◽  
Hole Recombination ◽  
Internal Body

In order to achieve cost reduction or shrinkage of power devices, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD). However, in a SiC p-i-n diode, forward current stress causes reliability degradation due to expansion of the electron-hole recombination-induced stacking faults. Applying the process optimization of the epitaxial layer for the reduction of recombination-induced stacking faults and the body diode screening method to 3.3 kV SiC-MOSFETs, we obtained more stable devices under forward current operation.

scholarly journals Effect of Virechana Karma along with Guggulu Kalpanas in the management of Medoroga - A Double Arm Study

2020 ◽  
Vol 5 (05) ◽  
pp. 89-95
Author(s):  
Pooja Abhrange ◽  
S. G. Chavan ◽  
Prashanth A.S.
Keyword(s):  
Metabolic Disease ◽  
Prime Factor ◽  
Natural Process ◽  
The Body ◽  
Inclusion Criteria ◽  
Contributing Factors ◽  
Root Cause ◽  
Individual Person ◽  
Group A ◽  
Group B

Metabolism is the natural process of the body, which is necessary to maintenance of the homeostasis of an individual person. Everybody constitutions are always in the process of metabolism, which is a combination of Anabolism (Construction) and Catabolism (Deterioration). As Agni is prime factor for all the Chayapachayakriya. Medoroga, is one of the Metabolic disease, in which contributing factors are Agni, Ama along with Kaphapradhana Tridosha, Medodhathu. Due to various types of etiological factors, the Agni in the body gets vitiated and Jatharagnimandya occurs. By this Jatharagnimandya, Dhathuparinama will not occur properly. This will lead to Medoroga and further many other Upadravas. To correct these conditions, Ayurveda has many modes of therapies like Samshodhana, Samshamana. By these we can correct the metabolism from the root cause. Here 40 Subjects diagnosed with Medoroga w.s.r. to Hyperlipidemia fulfilling the Inclusion criteria were selected for study and randomly categorized into two groups as Group A and Group B each consisting of 20 subjects. For both groups Amapachana with Chitrakadi Vati, Sadhyosnehapana with Murchita Sarshapa Taila, Sarvanga Abhyanga with Murchita Tila Taila followed by Swedana. And Virechana was administered with Virechana Gulika. Than each group received two different Shamanoushadhi. So, the objective of the study is to establish the efficacy of Virechana along with Dashanga Guggulu and Virechana along with Shadushana Guggulu in the management of Medoroga.

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FR07 ◽  
Author(s):  
Shohei Hayashi ◽  
Tamotsu Yamashita ◽  
Junji Senzaki ◽  
Masaki Miyazato ◽  
Mina Ryo ◽  
...  
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
Forward Current ◽  
Basal Plane Dislocation

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy

2019 ◽  
Vol 963 ◽  
pp. 251-254
Author(s):  
Toshiyuki Isshiki ◽  
Takahiro Sato ◽  
Masaki Hasegawa ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Layer ◽  
Stacking Faults ◽  
Low Energy ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Etch Pit

Dislocations and stacking faults in 4H-SiC (0001) si epitaxial wafer was inspected by mirror projection electron microscopy (MPJ) with the aid of low-energy SEM and FIB-STEM. MPJ observation found dislocation conversion near the wafer surface, and the conversion was confirmed by micro etch pit and low energy SEM method. Another conversion occurred in the epitaxial layer on array of TED half loops, which were detected by MPJ, was also observed by cross-sectional STEM.

Developing a theoretical framework for intelligent contract acceptance

2020 ◽  
Vol 20 (3) ◽  
pp. 421-445 ◽  
Author(s):  
Alan J. McNamara ◽  
Samad M.E. Sepasgozar
Keyword(s):  
Technology Acceptance ◽  
Technology Acceptance Model ◽  
Industry 4.0 ◽  
Theoretical Framework ◽  
The Body ◽  
Extensive Literature ◽  
Contributing Factors ◽  
Model Framework ◽  
Content Type ◽  
Acceptance Model

Purpose This paper aims to develop a novel theoretical technology acceptance model, namely, for predicting acceptance of the trending technology of intelligent contracts (iContracts) in construction, which aims to integrate the data from emerging cyber-physical systems being introduced to the sector through the industry 4.0 revolution. This model includes main dimensions and critical contributing factors to assess the readiness for the iContract concept within the construction contract environment. Design/methodology/approach Through an extensive literature review, the structure of a unique theoretical technology acceptance model for iContract implementation, within construction, was developed iContract acceptance model (iCAM). Relevant themes were assessed through the lens of the technology acceptance model framework and the four accepted dimensions of the technology readiness index (TRI) concept. The main components of the model were examined with selected practitioners, with relevant experience and understanding of the iContract concept, with thematic mapping of the discussions correlated back to 12 specific iContract contributing constructs of the four adapted TRI dimensions. Findings The paper contributes to the body of knowledge by proposing a novel iCAM for a trending technology based on the specific requirements of iContract adoption. The interviews show that while the desire to digitalise the contractual environment exists, the readiness of the sector for such a disruptive change is unknown. Practical implications The findings and proposed conceptual iCAM offers a lens for the further development of the iContract concept by assisting practitioners to forecast digital readiness of the contract process in construction. Originality/value This study offers a unique and theoretical framework, in an embryonic field, for predicting the success of iContract implementation within construction organisations through the digital, industry 4.0 and revolution.

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