Comparison between CNT Thermal Interface Materials with Graphene Thermal Interface Material in Term of Thermal Conductivity

2020 ◽  
Vol 1010 ◽  
pp. 160-165
Author(s):  
Mazlan Mohamed ◽  
Mohd Nazri Omar ◽  
Mohamad Shaiful Ashrul Ishak ◽  
Rozyanty Rahman ◽  
Nor Zaiazmin Yahaya ◽  
...  

Thermal interface material (TIM) had been well conducted and developed by using several material as based material. A lot of combination and mixed material were used to increase thermal properties of TIM. Combination between materials for examples carbon nanotubes (CNT) and epoxy had had been used before but the significant of the studied are not exactly like predicted. In this studied, thermal interface material using graphene and CNT as main material were used to increase thermal conductivity and thermal contact resistance. These two types of TIM had been compare to each other in order to find wich material were able to increase the thermal conductivity better. The sample that contain 20 wt. %, 40 wt. % and 60 wt. % of graphene and CNT were used in this studied. The thermal conductivity of thermal interface material is both measured and it was found that TIM made of graphene had better thermal conductivity than CNT. The highest thermal conductivity is 23.2 W/ (mK) with 60 w. % graphene meanwhile at 60 w. % of CNT only produce 12.2 W/ (mK thermal conductivity).

2018 ◽  
Vol 7 (4.33) ◽  
pp. 530
Author(s):  
Mazlan Mohamed ◽  
Mohd Nazri Omar ◽  
Mohamad Shaiful Ashrul Ishak ◽  
Rozyanty Rahman ◽  
Zaiazmin Y.N ◽  
...  

Epoxy mixed with others filler for thermal interface material (TIM) had been well conducted and developed. There are problem occurs when previous material were used as matrix material likes epoxy that has non-uniform thickness of thermal interface material produce, time taken for solidification and others. Thermal pad or thermal interface material using graphene as main material to overcome the existing problem and at the same time to increase thermal conductivity and thermal contact resistance. Three types of composite graphene were used for thermal interface material in this research. The sample that contain 10 wt. %, 20 wt. % and 30 wt. % of graphene was used with different contain of graphene oxide (GO).  The thermal conductivity of thermal interface material is both measured and it was found that the increase of amount of graphene used will increase the thermal conductivity of thermal interface material. The highest thermal conductivity is 12.8 W/ (mK) with 30 w. % graphene. The comparison between the present thermal interface material and other thermal interface material show that this present graphene-epoxy is an excellent thermal interface material in increasing thermal conductivity.  


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1699
Author(s):  
Sriharsha Sudhindra ◽  
Fariborz Kargar ◽  
Alexander A. Balandin

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt %. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.


2001 ◽  
Vol 123 (5) ◽  
pp. 969-975 ◽  
Author(s):  
Ravi S. Prasher

Microprocessor powers are increasing at a phenomenal rate, which requires very small thermal resistance between the die (chip) and the ambient, if the current economical methods of conduction and convection cooling are to be utilized. A typical thermal solution in flip chip technology utilizes two levels of thermal interface materials: between the die and the heat spreader, and between the heat spreader and the heat sink. Phase change materials and thermal greases are among the most prominent interstitial thermal interface materials (TIM) used in electronic packaging. These TIMs are typically polymeric matrix loaded with highly conducting filler particles. The dwindling thermal budget has necessitated a better understanding of the thermal resistance of each component of the thermal solution. Thermal conductivity of these particle-laden materials is better understood than their contact resistance. A careful review of the literature reveals the lack of analytical models for the prediction of contact resistance of these types of interstitial materials, which possess fluidic properties. This paper introduces an analytical model for the thermal contact resistance of these types of interstitial materials. This model is compared with the experimental data obtained on the contact resistance of these TIMs. The model, which depends on parameters such as, surface tension, contact angle, thermal conductivity, roughness and pressure matches very well with the experimental data at low pressures and is still within the error bars at higher pressures.


Author(s):  
David Shaddock ◽  
Stanton Weaver ◽  
Ioannis Chasiotis ◽  
Binoy Shah ◽  
Dalong Zhong

The power density requirements continue to increase and the ability of thermal interface materials has not kept pace. Increasing effective thermal conductivity and reducing bondline thickness reduce thermal resistance. High thermal conductivity materials, such as solders, have been used as thermal interface materials. However, there is a limit to minimum bondline thickness in reducing resistance due to increased fatigue stress. A compliant thermal interface material is proposed that allows for thin solder bondlines using a compliant structure within the bondline to achieve thermal resistance <0.01 cm2C/W. The structure uses an array of nanosprings sandwiched between two plates of materials to match thermal expansion of their respective interface materials (ex. silicon and copper). Thin solder bondlines between these mating surfaces and high thermal conductivity of the nanospring layer results in thermal resistance of 0.01 cm2C/W. The compliance of the nanospring layer is two orders of magnitude more compliant than the solder layers so thermal stresses are carried by the nanosprings rather than the solder layers. The fabrication process and performance testing performed on the material is presented.


Energies ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 2080 ◽  
Author(s):  
Andreas Nylander ◽  
Josef Hansson ◽  
Majid Kabiri Samani ◽  
Christian Chandra Darmawan ◽  
Ana Borta Boyon ◽  
...  

As feature density increases within microelectronics, so does the dissipated power density, which puts an increased demand on thermal management. Thermal interface materials (TIMs) are used at the interface between contacting surfaces to reduce the thermal resistance, and is a critical component within many electronics systems. Arrays of carbon nanotubes (CNTs) have gained significant interest for application as TIMs, due to the high thermal conductivity, no internal thermal contact resistances and an excellent conformability. While studies show excellent thermal performance, there has to date been no investigation into the reliability of CNT array TIMs. In this study, CNT array TIMs bonded with polymer to close a Si-Cu interface were subjected to thermal cycling. Thermal interface resistance measurements showed a large degradation of the thermal performance of the interface within the first 100 cycles. More detailed thermal investigation of the interface components showed that the connection between CNTs and catalyst substrate degrades during thermal cycling even in the absence of thermal expansion mismatch, and the nature of this degradation was further analyzed using X-ray photoelectron spectroscopy. This study indicates that the reliability will be an important consideration for further development and commercialization of CNT array TIMs.


Author(s):  
Senthil A. G. Singaravelu ◽  
Xuejiao Hu ◽  
Kenneth E. Goodson

Increasing power dissipation in today’s microprocessors demands thermal interface materials (TIMs) with lower thermal resistances. The TIM thermal resistance depends on the TIM thermal conductivity and the bond line thickness (BLT). Carbon Nanotubes (CNTs) have been proposed to improve the TIM thermal conductivity. However, the rheological properties of TIMs with CNT inclusions are not well understood. In this paper, the transient behavior of the BLT of the TIMs with CNT inclusions has been measured under controlled attachment pressures. The experimental results show that the impact of CNT inclusions on the BLT at low volume fractions (up to 2 vol%) is small; however, higher volume fraction of CNT inclusions (5 vol%) can cause huge increase in TIM thickness. Although thermal conductivities are higher for higher CNT fractions, a minimum TIM resistance exists at some optimum CNT fraction for a given attachment pressure.


2013 ◽  
Vol 136 (1) ◽  
Author(s):  
R. Kempers ◽  
A. M. Lyons ◽  
A. J. Robinson

A metal microtextured thermal interface material (MMT-TIM) has been proposed to address some of the shortcomings of conventional TIMs. These materials consist of arrays of small-scale metal features that plastically deform when compressed between mating surfaces, conforming to the surface asperities of the contacting bodies and resulting in a low-thermal resistance assembly. The present work details the development of an accurate thermal model to predict the thermal resistance and effective thermal conductivity of the assembly (including contact and bulk thermal properties) as the MMT-TIMs undergo large plastic deformations. The main challenge of characterizing the thermal contact resistance of these structures was addressed by employing a numerical model to characterize the bulk thermal resistance and estimate the contribution of thermal contact resistance. Furthermore, a correlation that relates electrical and thermal contact resistance for these MMT-TIMs was developed that adequately predicted MMT-TIM properties for several different geometries. A comparison to a commercially available graphite TIM is made as well as suggestions for optimizing future MMT-TIM designs.


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